Near-field low-temperature photoluminescence spectroscopy of single V-shaped quantum wires

1999 ◽  
Vol 60 (19) ◽  
pp. 13335-13338 ◽  
Author(s):  
V. Emiliani ◽  
Ch. Lienau ◽  
M. Hauert ◽  
G. Colí ◽  
M. DeGiorgi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wires ◽  
Near Field ◽  
Photoluminescence Spectroscopy ◽  
Low Temperature Photoluminescence

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 437-440 ◽  
Author(s):  
John W. Steeds
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Carbon Vacancy ◽  
Low Temperature Photoluminescence

A common set of optical centres found in photoluminescence spectra of electron irradiated 4H SiC is interpreted as originating in neutral carbon-vacancy carbon anti-site pairs.

scholarly journals Low-Temperature Photoluminescence Spectroscopy of Solvent-Free PCBM Single-Crystals

2015 ◽  
Vol 119 (21) ◽  
pp. 11846-11851 ◽  
Author(s):  
Giulia Tregnago ◽  
Michael Wykes ◽  
Giuseppe M. Paternò ◽  
David Beljonne ◽  
Franco Cacialli
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Photoluminescence Spectroscopy ◽  
Solvent Free ◽  
Low Temperature Photoluminescence

Low temperature near-field luminescence studies of localized and delocalized excitons in quantum wires

2001 ◽  
Vol 202 (1) ◽  
pp. 193-201 ◽  
Author(s):  
F. Intonti ◽  
V. Emiliani ◽  
C. Lienau ◽  
T. Elsaesser ◽  
R. Notzel ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wires ◽  
Near Field

scholarly journals Using Low Temperature Photoluminescence Spectroscopy to Investigate CH3NH3PbI3 Hybrid Perovskite Degradation

Molecules ◽  
2016 ◽  
Vol 21 (7) ◽  
pp. 885 ◽  
Author(s):  
Khaoula Jemli ◽  
Hiba Diab ◽  
Ferdinand Lédée ◽  
Gaelle Trippé-Allard ◽  
Damien Garrot ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectroscopy ◽  
Hybrid Perovskite ◽  
Low Temperature Photoluminescence

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 171-174 ◽  
Author(s):  
Jean Lorenzzi ◽  
Georgios Zoulis ◽  
Olivier Kim-Hak ◽  
Nikoletta Jegenyes ◽  
Davy Carole ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Purity ◽  
Doping Level ◽  
Systematic Investigation ◽  
Photoluminescence Spectroscopy ◽  
Single Domain ◽  
New Approach ◽  
Residual N ◽  
Low Temperature Photoluminescence

We report the results of a systematic investigation performed to reduce the residual n-type doping level of the 3C-SiC layers grown by the VLS mechanism on 6H-SiC(0001) on-axis substrate. This new approach, termed “High purity VLS” leads to low doped and low compensated material, which was confirmed by Raman and Low Temperature Photoluminescence spectroscopy. The resultant 3C morphology remains typical of single-domain layers and the n-type doping level could be estimated around 6x1016 cm-3.

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