Numerical analysis of different methods to calculate residual stresses in thin films based on instrumented indentation data

2012 ◽  
Vol 27 (13) ◽  
pp. 1732-1741 ◽  
Author(s):  
Carlos Eduardo Keutenedjian Mady ◽  
Sara Aida Rodriguez ◽  
Adriana Gómez Gómez ◽  
Roberto Martins Souza

Abstract

1997 ◽  
Vol 505 ◽  
Author(s):  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
Yitshak Zohar

ABSTRACTFEM simulation of micro-rotating-structures was performed for local measurement of residual stresses in thin films. A sensitivity factor is introduced, studied and tabulated from the simulation results. The residual stress can be evaluated from the rotating deflection, the lengths of rotating and fixed beams, and the sensitivity factor. The micro-structure technique was applied to measure residual stresses in both silicon nitride and polysilicon thin films, before and after rapid thermal annealing (RTA), and further confirmed by wafer curvature method. Residual stresses in polysilicon films at different RTA stages were also characterized by micro-Raman spectroscopy (MRS). The experimental results indicate that micro-rotating-structures indeed have the ability to measure spatially and locally residual stresses in MEMS thin films with appropriate sensitivities.


Author(s):  
E. Jiménez-Piqué ◽  
L. Ceseracciu ◽  
Y. Gaillard ◽  
M. Barch ◽  
G. De Portu ◽  
...  

2018 ◽  
Vol 33 (24) ◽  
pp. 4165-4172 ◽  
Author(s):  
Deepak Kumar ◽  
Prasanta Mandal ◽  
Anil Singh ◽  
Charu Pant ◽  
Sudesh Sharma

Abstract


2016 ◽  
Vol 31 (8) ◽  
pp. 1018-1026 ◽  
Author(s):  
David T. Harris ◽  
Matthew J. Burch ◽  
Edward J. Mily ◽  
Elizabeth C. Dickey ◽  
Jon-Paul Maria

Abstract


2018 ◽  
Vol 59 (1) ◽  
pp. 111-120 ◽  
Author(s):  
I. G. McDonald ◽  
W. M. Moehlenkamp ◽  
D. Arola ◽  
J. Wang

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