Microstructure and dielectric properties with CuO additions to liquid phase sintered BaTiO3 thin films

2016 ◽  
Vol 31 (8) ◽  
pp. 1018-1026 ◽  
Author(s):  
David T. Harris ◽  
Matthew J. Burch ◽  
Edward J. Mily ◽  
Elizabeth C. Dickey ◽  
Jon-Paul Maria
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Liquid Phase ◽  
Image Position

Abstract

On Preparation of SrTiO3 Thin Films with Self-Assembled Monolayers by Liquid Phase Deposition and its Dielectric Properties

2012 ◽  
Vol 512-515 ◽  
pp. 1165-1170
Author(s):  
Wei Guang Han ◽  
Guo Qiang Tan ◽  
Ao Xia ◽  
Hui Jun Ren
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Liquid Phase ◽  
Dielectric Loss ◽  
Precursor Solution ◽  
Self Assembled Monolayers ◽  
Liquid Phase Deposition ◽  
Assembled Monolayers ◽  
Self Assembled

In this paper, titanium ammonium fluoride ((NH4)TiF6), strontium nitrate (Sr(NO3)2) and boric acid (H3BO3) were used as raw materials, the precursor solution was prepared with molar ratio of AHFT/SN/BA=1/1/3. SrTiO3 dielectric thin films were deposited with the self-assembled monolayers (SAMs) by the liquid-phase deposition on FTO substrate. X-ray diffraction (XRD), scanning election microscopy (SEM) and Agilent E4980A precision LCR Meter were used to characterize the SrTiO3 films. The precursor solution concentration and the pH values of precursor solution had the effects on the dielectric properties of the as-prepared thin films. When the precursor concentration was 0.0125mol/L, the crystallization of as-prepared SrTiO3 thin films was high and the grain sizes on the film surface were even and dense. When the frequency was 15~100KHz, the optimal dielectric constant was up to 1060, the minimal dielectric loss was 4.053. As pH=3.30, the frequency of the as-prepared SrTiO3 thin films was 15~100KHz. The optimal dielectric constant was up to 1060, too. The minimal dielectric loss was 1.914. The optimal dielectric constants were 346.3 and 424.1 when the pH was 3.1 and below 3.5 respectively. The minimal dielectric losses were respectively 18.10 and 54.82.

IN-PLANE DIELECTRIC PROPERTIES OF BST THIN FILMS GROWN ON MgO SUBSTRATES USING THE THIN PEROVSKITE LAYERS FOR MICROWAVE TUNABLE ELECTRONICS

2006 ◽  
Vol 86 (1) ◽  
pp. 159-169 ◽  
Author(s):  
SU-JAE LEE ◽  
HAN-CHEOL RYU ◽  
YOUNG-TAE KIM ◽  
MIN-HWAN KWAK ◽  
SEUNGEON MOON ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bst Thin Films

Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping

2013 ◽  
Vol 102 (2) ◽  
pp. 022904 ◽  
Author(s):  
Ayan Roy Chaudhuri ◽  
A. Fissel ◽  
V. R. Archakam ◽  
H. J. Osten
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Nitrogen Doping

Liquid phase deposition of iron and cobalt doped TiO2 epitaxial thin films

2008 ◽  
Vol 205 (10) ◽  
pp. 2405-2408 ◽  
Author(s):  
K. Y. S. Chan ◽  
G. K. L. Goh ◽  
M. Y. Han
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Epitaxial Thin Films ◽  
Liquid Phase Deposition ◽  
Doped Tio2
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