Residual stress in as-deposited Al–Cu–Fe–B quasicrystalline thin films

2011 ◽  
Vol 27 (5) ◽  
pp. 837-844 ◽  
Author(s):  
Sergey Polishchuk ◽  
Pascal Boulet ◽  
André Mézin ◽  
Marie-Cécile de Weerd ◽  
Sylvain Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Image Position

Abstract

Nanoscale planar faulting in nanocrystalline Ni–W thin films: Grain growth, segregation, and residual stress

2011 ◽  
Vol 26 (19) ◽  
pp. 2558-2573 ◽  
Author(s):  
Udo Welzel ◽  
Johannes Kümmel ◽  
Ewald Bischoff ◽  
Silke Kurz ◽  
Eric Jan Mittemeijer
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Grain Growth ◽  
Image Position

Abstract

Residual stress and mechanical properties of polyimide thin films

2009 ◽  
Vol 113 (2) ◽  
pp. 976-983 ◽  
Author(s):  
Wonbong Jang ◽  
Jongchul Seo ◽  
Choonkeun Lee ◽  
Sang-Hyon Paek ◽  
Haksoo Han
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress

The Materials Science of “Permeable Polysilicon” Thin Films

2001 ◽  
Vol 687 ◽  
Author(s):  
George M Dougherty ◽  
Timothy Sands ◽  
Albert P. Pisano
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Materials Science ◽  
Single Step ◽  
Process Window ◽  
Silicon Thin Films ◽  
Growth Regime ◽  
Deposition Parameters ◽  
Simple Kinetic Model ◽  
The Relationship

AbstractPolycrystalline silicon thin films that are permeable to fluids, known as permeable polysilicon, have been reported by several researchers. Such films have great potential for the fabrication of difficult to make MEMS structures, but their use has been hampered by poor process repeatability and a lack of physical understanding of the origin of film permeability and how to control it. We have completed a methodical study of the relationship between process, microstructure, and properties for permeable polysilicon thin films. As a result, we have determined that the film permeability is caused by the presence of nanoscale pores, ranging from 10-50 nm in size, that form spontaneously during LPCVD deposition within a narrow process window. The unusual microstructure within this process window corresponds to the transition between a semicrystalline growth regime, exhibiting tensile residual stress, and a columnar growth regime exhibiting compressive residual stress. A simple kinetic model is proposed to explain the unusual morphology within this transition regime. It is determined that measurements of the film residual stress can be used to tune the deposition parameters to repeatably produce permeable films for applications. The result is a convenient, single-step process that enables the elegant fabrication of many previously challenging structures.

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

2009 ◽  
Vol 255 (19) ◽  
pp. 8252-8256 ◽  
Author(s):  
Thanh Nga Nguyen ◽  
Van Duy Nguyen ◽  
Sungwook Jung ◽  
Junsin Yi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Thin Films

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Relaxation of residual stress-controlled thermopower factor in transparent-flexible Ti-doped ZnO thin films

2021 ◽  
Author(s):  
Dai Cao Truong ◽  
Somporn Thaowonkaew ◽  
Pennapa Muthitamongkol ◽  
Mati Horprathum ◽  
Manish Kumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Zno Thin Films ◽  
Doped Zno

Synthesis and characterization of Ni incorporated titanium dioxide thin films

2018 ◽  
Vol 33 (24) ◽  
pp. 4165-4172 ◽  
Author(s):  
Deepak Kumar ◽  
Prasanta Mandal ◽  
Anil Singh ◽  
Charu Pant ◽  
Sudesh Sharma
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Synthesis And Characterization ◽  
Titanium Dioxide Thin Films ◽  
Image Position

Abstract

Crystallite size and microstrain: XRD line broadening analysis of AgSiN thin films

2019 ◽  
Vol 48 (6) ◽  
pp. 473-480 ◽  
Author(s):  
Umi Zalilah Mohamad Zaidi ◽  
A.R. Bushroa ◽  
Reza Rahbari Ghahnavyeh ◽  
Reza Mahmoodian
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Magnetron Sputtering ◽  
Crystallite Size ◽  
Approximation Method ◽  
Ti6al4v Alloy ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Content Type ◽  
Three Samples

Purpose This paper aims to determine the crystallite size and microstrain values of AgSiN thin films using potential approach called approximation method. This method can be used as a replacement for other determination methods such as Williamson-Hall (W-H) plot and Warren-Averbach analysis. Design/methodology/approach The monolayer AgSiN thin films on Ti6Al4V alloy were fabricated using magnetron sputtering technique. To evaluate the crystallite size and microstrain values, the thin films were deposited under different bias voltage (−75, −150 and −200 V). X-ray diffraction (XRD) broadening profile along with approximation method were used to determine the crystallite size and microstrain values. The reliability of the method was proved by comparing it with scanning electron microscopy graph and W-H plot method. The second parameters’ microstrain obtained was used to project the residual stress present in the thin films. Further discussion on the thin films was done by relating the residual stress with the adhesion strength and the thickness of the films. Findings XRD-approximation method results revealed that the crystallite size values obtained from the method were in a good agreement when it is compared with Scherer formula and W-H method. Meanwhile, the calculations for thin films corresponding residual stresses were correlated well with scratch adhesion critical loads with the lowest residual stress was noted for sample with lowest microstrain and has thickest thickness among the three samples. Practical implications The fabricated thin films were intended to be used in antibacterial applications. Originality/value Up to the knowledge from literature review, there are no reports on depositing AgSiN on Ti6Al4V alloy via magnetron sputtering to elucidate the crystallite size and microstrain properties using the approximation method.

Sensitivity of Residual Stress to Moisture Penetration on Optical Thin Films

1993 ◽  
Vol 32 (Part 1, No. 1A) ◽  
pp. 155-161 ◽  
Author(s):  
Hong-Jueng King ◽  
Bor-Ming Lee ◽  
Ching-An Shao ◽  
Chien Chou ◽  
Fu-Pen CHiang
Keyword(s):  
Thin Films ◽  
Residual Stress

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Elevated Temperatures ◽  
Silicon Oxide ◽  
Composite Films ◽  
Deposition Process ◽  
Silicon Oxycarbide ◽  
X Ray ◽  
Curvature Measurement ◽  
Film Substrate

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.

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