The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructures

1995 ◽  
Vol 24 (11) ◽  
pp. 1723-1730 ◽  
Author(s):  
C. Pelosi ◽  
G. Attolini ◽  
C. Bocchi ◽  
P. Franzosi ◽  
C. Frigeri ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Role of gas‐phase adducts in the growth of gallium arsenide by metalorganic vapor‐phase epitaxy

1993 ◽  
Vol 63 (2) ◽  
pp. 214-215 ◽  
Author(s):  
Douglas F. Foster ◽  
Christopher Glidewell ◽  
David J. Cole‐Hamilton
Keyword(s):  
Gallium Arsenide ◽  
Gas Phase ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

2012 ◽  
Vol 111 (12) ◽  
pp. 124505 ◽  
Author(s):  
S. Fritze ◽  
P. Drechsel ◽  
P. Stauss ◽  
P. Rode ◽  
T. Markurt ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP

1993 ◽  
Vol 48 (15) ◽  
pp. 11135-11143 ◽  
Author(s):  
R. Leonelli ◽  
C. A. Tran ◽  
J. L. Brebner ◽  
J. T. Graham ◽  
R. Tabti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy

2011 ◽  
Vol 26 (6) ◽  
pp. 775-780
Author(s):  
Xiuhua Wang ◽  
Shanshan Chen ◽  
Wei Lin ◽  
Shuping Li ◽  
Hangyang Chen ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Image Position

Abstract

Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

1999 ◽  
Vol 85 (11) ◽  
pp. 7682-7688 ◽  
Author(s):  
Shigeo Yamaguchi ◽  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Tetsuya Takeuchi ◽  
Christian Wetzel ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth and structural properties of thick InAs films on GaAs with low-pressure metalorganic vapor phase epitaxy

2004 ◽  
Vol 273 (1-2) ◽  
pp. 63-67 ◽  
Author(s):  
Hairong Yuan ◽  
Soo Jin Chua ◽  
Zhonglin Miao ◽  
Jianrong Dong ◽  
Yanjun Wang
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy

1998 ◽  
Vol 37 (Part 2, No. 6B) ◽  
pp. L697-L699 ◽  
Author(s):  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Shigeo Yamaguchi ◽  
Hisaki Kato ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Ternary Alloys

Electrical and structural properties of Ga0.51In0.49P/GaAs heterojunctions grown by metalorganic vapor‐phase epitaxy

1992 ◽  
Vol 60 (22) ◽  
pp. 2749-2751 ◽  
Author(s):  
E. C. Paloura ◽  
A. Ginoudi ◽  
G. Kiriakidis ◽  
N. Frangis ◽  
F. Scholz ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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