Noncontact, in-line measurement of boron concentration from ultrathin boron-doped epitaxial Si1–xGex layers on Si(100) by multiwavelength micro-Raman spectroscopy

2011 ◽  
Vol 26 (6) ◽  
pp. 739-744 ◽  
Author(s):  
Yu Fen Tzeng ◽  
Scott Ku ◽  
Stock Chang ◽  
Chi Ming Yang ◽  
Chyi Shieng Chern ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Boron Concentration ◽  
Micro Raman Spectroscopy ◽  
Boron Doped ◽  
Line Measurement ◽  
Image Position

Abstract

Evaluation of Residual Stresses in Thin Films by Means of Micro-Raman Spectroscopy

1997 ◽  
Vol 505 ◽  
Author(s):  
Kazuyuki Mizuhara ◽  
Shinichi Takahashi ◽  
Jyunichi Kurokawa ◽  
Noboru Morita ◽  
Yoshitaro Yoshida
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Effects ◽  
Simultaneous Observation ◽  
Stress Evaluation ◽  
Advantages And Disadvantages ◽  
Micro Raman Spectroscopy ◽  
Boron Doped ◽  
Doped Silicon ◽  
Fluid Cooling ◽  
Anti Stokes

ABSTRACTThe effects of temperatures on the stress evaluation of boron doped silicon in solid and film forms are investigated. Several techniques, such as fluid cooling to eliminate the temperature raise and/or simultaneous observation of Stokes and anti Stokes peaks to compensate the temperature effects, are applied. The advantages and disadvantages of each method and the abilities and limits of these techniques are discussed.

Determination of atomic boron concentration in heavily boron-doped diamond by Raman spectroscopy

2019 ◽  
Vol 93 ◽  
pp. 54-58 ◽  
Author(s):  
V. Mortet ◽  
Z. Vlčková Živcová ◽  
A. Taylor ◽  
M. Davydová ◽  
O. Frank ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Boron Concentration ◽  
Boron Doped Diamond ◽  
Boron Doped

scholarly journals Boron-Carbon Coatings: Structure, Morphology, and Mechanical Properties

2020 ◽  
Vol 7 (2) ◽  
pp. C1-C9
Author(s):  
Е. А. Kulesh ◽  
D. G. Piliptsou ◽  
A. V. Rogachev ◽  
J. X. Hong ◽  
N. N. Fedosenko ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
Boron Concentration ◽  
Carbon Coatings ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Boron Doped ◽  
Boron Carbon

Boron-doped carbon coatings have been produced by a method combining the deposition of a pulsed carbon plasma coating and a boron flow formed as a result of the evaporation of a boron target by pulsed YAG: Nd3+ laser irradiation. Phase, chemical composition, structure, and mechanical properties of composite boron-carbon coatings have been determined. Changes in the coatings’ roughness depending on the boron concentration have been established using atomic force microscopy. It has been shown that the grain size is on the rise with increasing boron concentration. Raman spectroscopy has revealed that at a boron concentration of 43.2 at. %. There is a sharp increase in the ID/IG ratio, which indicates the carbon component’s graphitization. Low ID/IG ratios are observed in the coating at low boron concentrations (no more than 17.4 at. %), suggesting a high content of carbon atoms with sp3 bond hybridization. The coating studies, carried out by X-ray photoelectron microscopy, showed that boron could be in a free state or in the form of carbide or oxide depending on the concentration in the coating. In this case, with an increase in boron concentration, there is a decrease in the concentration of carbon atoms in the state with sp3 bond hybridization, accompanied by an increase in the number of B-C bonds and a reduction in the boron concentration not associated with carbon and oxygen. These coating and chemical composition features determine the boron concentration’s established non-monotonic nature on their microhardness, elastic and mechanical properties. Keywords: composite carbon coatings, boron-doped, atomic force microscopy, X-ray photoelectron microscopy, Raman spectroscopy, microhardness, scratch.

scholarly journals Characterisation of thin boron-doped diamond films using Raman spectroscopy and chemometrics

2019 ◽  
Vol 11 (5) ◽  
pp. 582-586 ◽  
Author(s):  
Peter Knittel ◽  
Robert Stach ◽  
Taro Yoshikawa ◽  
Lutz Kirste ◽  
Boris Mizaikoff ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Boron Concentration ◽  
Diamond Films ◽  
Raman Microscopy ◽  
Boron Doped Diamond ◽  
Chemometric Method ◽  
Boron Doped ◽  
Heavily Doped ◽  
Non Destructive

A non-destructive chemometric method to determine thickness and boron concentration of as-deposited, thin, heavily doped diamond films by Raman microscopy.

Thickness Measurement in the AEM by Macintosh-Based Analysis of Two-Beam Convergent Beam Patterns

1990 ◽  
Vol 48 (2) ◽  
pp. 504-505
Author(s):  
John F. Mansfield ◽  
Douglas C. Crawford
Keyword(s):  
Electron Microscope ◽  
Video Camera ◽  
Thickness Measurement ◽  
Specimen Thickness ◽  
Crystalline Materials ◽  
Beam Dynamic ◽  
Line Measurement ◽  
On Line ◽  
Image Position ◽  
Convergent Beam

A method has been developed that allows on-line measurement of the thickness of crystalline materials in the analytical electron microscope. Two-beam convergent beam electron diffraction (CBED) patterns are digitized from a JEOL 2000FX electron microscope into an Apple Macintosh II microcomputer via a Gatan #673 CCD Video Camera and an Imaging Systems Technology Video 1000 frame-capture board. It is necessary to know the lattice parameters of the sample since measurements are made of the spacing of the diffraction discs in order to calibrate the pattern. The sample thickness is calculated from measurements of the spacings of the fringes that are seen in the diffraction discs. This technique was pioneered by Kelly et al, who used the two-beam dynamic theory of MacGillavry relate the deviation parameter (Si) of the ith fringe from the exact Bragg condition to the specimen thickness (t) with the equation:Where ξg, is the extinction distance for that reflection and ni is an integer.

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Micro-Raman spectroscopy of Shang oracle bone inscriptions

2021 ◽  
Vol 37 ◽  
pp. 102910
Author(s):  
Jhih-Huei Liu ◽  
Weiying Ke ◽  
Ming-chorng Hwang ◽  
Kuang Yu Chen
Keyword(s):  
Raman Spectroscopy ◽  
Micro Raman Spectroscopy
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