Multilayer thin and ultrathin film capacitors fabricated by chemical solution deposition

2008 ◽  
Vol 23 (1) ◽  
pp. 176-181 ◽  
Author(s):  
Geoff L. Brennecka ◽  
Chad M. Parish ◽  
Bruce A. Tuttle ◽  
Luke N. Brewer
Keyword(s):  
Chemical Solution Deposition ◽  
Platinum Electrodes ◽  
Chemical Solution ◽  
Lead Lanthanum Zirconate Titanate ◽  
Solution Deposition ◽  
Passive Components ◽  
Dielectric Layers ◽  
20 Nm ◽  
Wet Etch ◽  
Multilayer Stacks

Chemical solution deposition has been used to fabricate continuous ultrathin lead lanthanum zirconate titanate (PLZT) films as thin as 20 nm. Further, multilayer capacitor structures with as many as 10 dielectric layers have been fabricated from these ultrathin PLZT films by alternating spin-coated dielectric layers with sputtered platinum electrodes. Integrating a photolithographically defined wet etch step to the fabrication process enabled the production of functional multilayer stacks with capacitance values exceeding 600 nF. Such ultrathin multilayer capacitors offer tremendous advantages for further miniaturization of integrated passive components.

scholarly journals Fabrication of ultrathin film capacitors by chemical solution deposition

2007 ◽  
Vol 22 (10) ◽  
pp. 2868-2874 ◽  
Author(s):  
Geoff L. Brennecka ◽  
Bruce A. Tuttle
Keyword(s):  
Chemical Solution Deposition ◽  
Hysteresis Loops ◽  
Dielectric Constants ◽  
Processing Route ◽  
Chemical Solution ◽  
Lead Lanthanum Zirconate Titanate ◽  
Lanthanum Zirconate ◽  
Solution Deposition ◽  
Phase Development ◽  
Ferroelectric Hysteresis

A facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of ⩾1 mm2 and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Thus, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nm but are still macroscopically addressable with specific capacitance values >160 nF/mm2.

scholarly journals Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

2014 ◽  
Vol 104 (20) ◽  
pp. 202903 ◽  
Author(s):  
S. Starschich ◽  
D. Griesche ◽  
T. Schneller ◽  
R. Waser ◽  
U. Böttger
Keyword(s):  
Chemical Solution Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Platinum Electrodes ◽  
Chemical Solution ◽  
Solution Deposition

scholarly journals Chemical Solution Deposition of La-Substituted BiFe0.5Sc0.5O3 Perovskite Thin Films on Different Substrates

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 307
Author(s):  
Diana Griesiute ◽  
Dovydas Karoblis ◽  
Lina Mikoliunaite ◽  
Aleksej Zarkov ◽  
Andrei N. Salak ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Cost Effective ◽  
Deposition Process ◽  
Stability Study ◽  
Fused Silica ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Optimal Annealing Temperature ◽  
Xrd Patterns

In the present work, polycrystalline Bi0.67La0.33Fe0.5Sc0.5O3 thin films were synthesized using a simple and cost-effective chemical solution deposition process employing the spin coating technique. In order to check the feasibility of the fabrication of thin films on various types of substrates, the films were deposited on Pt-coated silicon, silicon, sapphire, corundum, fused silica and glass. Based on the results of thermogravimetric analysis of precursor and thermal stability study, it was determined that the optimal annealing temperature for the formation of perovskite structure is 600 °C. It was observed that the relative intensity of the pseudocubic peaks (001)p and (011)p in the XRD patterns is influenced by the nature of substrates, suggesting that the formed crystallites have some preferred orientation. Roughness of the films was determined to be dependent on the nature of the substrate.

The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films

2021 ◽  
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Metal Ion ◽  
Chemical Deposition ◽  
Review Article ◽  
Complexing Agents ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Metal Chalcogenide ◽  
Chalcogenide Thin Films

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

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