Interfacial reactions in the Sn–9Zn–(xCu)/Cu and Sn–9Zn–(xCu)/Ni couples

2006 ◽  
Vol 21 (7) ◽  
pp. 1849-1856 ◽  
Author(s):  
Chin-yi Chou ◽  
Sinn-wen Chen ◽  
Yee-shyi Chang

Sn–Zn-based alloys are promising low melting-point Pb-free solders, and it has been reported that their wetting properties and oxidation resistance can be improved with the addition of Cu. The interfacial reactions in the Sn–9 wt% Zn–xCu/Cu couples at 250 °C and Sn–9 wt% Zn–xCu/Ni at 280 °C were examined in this study. A thick γ–Cu5Zn8 phase layer and a very thin β′–CuZn phase layer were formed in both the Sn–9 wt% Zn/Cu and the Sn–9 wt% Zn–1 wt% Cu/Cu couples. The γ–Ni5Zn21 phase layer was formed in both the Sn–9 wt% Zn/Ni and Sn–9 wt% Zn–1 wt% Cu/Ni couples. With longer reaction time, the δ–Ni3Sn4 phase were formed in the Sn–9 wt% Zn/Ni couple as well. In both the Cu and Ni couples, the Zn-containing γ phases were uniform and planar and were the dominant reaction products. However, when the Cu content of the Sn–9 wt% Zn–xCu solders was 10 wt%, the interfacial reaction product becomes the η–Cu6Sn5 phase in both the Cu and Ni couples.

Metals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 604 ◽  
Author(s):  
Xuewei Zhu ◽  
Jian Peng ◽  
Xiaofeng Wei ◽  
Pengpeng Yan ◽  
Fu Wang

Sn-9Zn solder is a promising Pb-free solder, but it tends to form bulky intermetallic compounds (IMC) grains at the interface when soldered with common simple metal Cu or Ni substrates. Interfacial reaction between Sn-9Zn solder and Ni(Cu) solid solution substrates at 250 °C and 350 °C were systematically probed in this study. Results showed that when soldered at 250 °C, a Ni5Zn21 layer is formed at Sn-Zn/Ni-20Cu and Sn-Zn/Ni-40Cu joints; and Ni2Sn2Zn + Cu5Zn8 and Cu5Zn8 phases are formed in Sn-Zn/Ni-60Cu and Sn-Zn/Ni-80Cu joints, respectively. Fine-grained IMCs formed at the interface are formed even when the soldered time is prolonged to 16 h. This result indicates that Ni(Cu) solid solution substrates inhibit the rapid growth of IMC at the Sn-Zn/Ni-Cu interface. Ni(Cu) solid solution substrate can also provide various combinations of reaction products at the Sn-Zn/Ni-Cu joints. The Ni5Zn21 transfers to Ni2Sn2Zn + Cu5Zn8 phases when the Cu content increased to 60%, and a bi-layered structure Ni2Sn2Zn + Cu5Zn8 IMCs was formed in Sn-Zn/Ni(Cu) joints at 350 °C regardless of the Cu content in Ni(Cu) substrate (20–80%). These results would provide an effective support in designing Sn-Zn soldering system with optimized IMC layer to improve mechanical performance.


2006 ◽  
Vol 21 (7) ◽  
pp. 1712-1717 ◽  
Author(s):  
Shih-kang Lin ◽  
Sinn-wen Chen

Sn–In alloys are promising low-melting-point Pb-free solders. Cu and Ni are common substrates in the electronic products. This study examines the interfacial reactions in the Sn–20 at.% In(γ–InSn4)/Cu and Sn–20 at.% In/Ni couples at 160 °C. Only the η–Cu6Sn5 phase layer is formed in the Sn–20 at.% In/Cu couple, and the layer grows thicker with longer reaction time. The reaction path is γ–InSn4/η–Cu6Sn5/Cu. A peculiar phenomenon with the bulging of the couple near the Ni substrate is found in the Sn–20 at.% In/Ni couple. A liquid phase is formed by interfacial reaction in the solid/solid Sn–20 at.% In/Ni couple at 160 °C, and the reaction path is γ–InSn4/liquid/δ–Ni3Sn4 + liquid/(δ–Ni3Sn4)/Ni. Usually Ni has a slower reaction rate with solders; however, the consumption rates of Ni substrate are much higher than those of Cu substrate in this study when they are in contact with the Sn–20 at.% In alloy at 160 °C due to the formation of the liquid phase in the Sn–20 at.% In/Ni couple.


1992 ◽  
Vol 7 (11) ◽  
pp. 2936-2941 ◽  
Author(s):  
R. Allem ◽  
F. Lavallée ◽  
G. L'Espérance ◽  
R. Schulz ◽  
M.L. Trudeau

The interfacial reactions between the Y1Ba2Cu3O7−x (123) compound and a Ag70Pd30 alloy have been studied for several heat treatments below and above the melting point of the superconductor. Scanning and transmission electron microscopy, energy dispersive x-ray analysis, Auger spectroscopy, and x-ray diffraction have been used to characterize the reaction products. For the heat treatments below the melting point of the superconductor (950 °C), the Ba and Cu of the 123 compound migrate to the interface and react with the Pd to form a body-centered cubic phase Ba(Pd, Cu)O2. This structure is formed by substitution of Cu by Pd on the Cu+2 sites of the BaCuO2 structure (Im3m space group). CuO is also found in some areas as a product of the reaction. For the thermal treatments above the melting point of the superconductor, the reaction products are the same but, in this case, a large number of Y2BaCuO5 precipitates are found in the bulk of the superconductor near the interface. Pure Ag particles have also been observed in the 123 compound at distances relatively far from the interface.


2015 ◽  
Vol 98 (6) ◽  
pp. 1937-1941 ◽  
Author(s):  
Zhiyuan Xiao ◽  
Yanqing Yang ◽  
Xian Luo ◽  
Bin Huang

2008 ◽  
Vol 23 (12) ◽  
pp. 3303-3308 ◽  
Author(s):  
Chien-Neng Liao ◽  
Ching-Hua Lee

Reactions of molten Sn–xCu (x = 0.05 to 1.0) alloys with Te substrate at 250 °C were investigated. A dosage of 0.1 wt% Cu in Sn is found to be effective in suppressing the vigorous Sn/Te reaction by forming a thin CuTe at the solder/Te interface. The CuTe morphology changes from irregular clusters into a layered structure with increasing Cu content in Sn. With the same reaction time, the CuTe thickness increases proportionally to the square root of Cu content in Sn–Cu alloys, suggesting a diffusion-controlled growth for CuTe.


Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 931 ◽  
Author(s):  
Kyriaki Polychronopoulou ◽  
Nikolaos Charisiou ◽  
Kyriakos Papageridis ◽  
Victor Sebastian ◽  
Steven Hinder ◽  
...  

In the present study, Ni/Ce-Sm-xCu (x = 5, 7, 10 at.%) catalysts were prepared using microwave radiation coupled with sol-gel and followed by wetness impregnation method for the Ni incorporation. Highly dispersed nanocrystallites of CuO and NiO on the Ce-Sm-Cu support were found. Increase of Cu content seems to facilitate the reducibility of the catalyst according to the H2 temperature-programmed reduction (H2-TPR). All the catalysts had a variety of weak, medium and strong acid/basic sites that regulate the reaction products. All the catalysts had very high XC3H8O3 for the entire temperature (400–750 °C) range; from ≈84% at 400 °C to ≈94% at 750 °C. Ni/Ce-Sm-10Cu catalyst showed the lowest XC3H8O3-gas implying the Cu content has a detrimental effect on performance, especially between 450–650 °C. In terms of H2 selectivity (SH2) and H2 yield (YH2), both appeared to vary in the following order: Ni/Ce-Sm-10Cu > Ni/Ce-Sm-7Cu > Ni/Ce-Sm-5Cu, demonstrating the high impact of Cu content. Following stability tests, all the catalysts accumulated high amounts of carbon, following the order Ni/Ce-Sm-5Cu < Ni/Ce-Sm-7Cu < Ni/Ce-Sm-10Cu (52, 65 and 79 wt.%, respectively) based on the thermogravimetric analysis (TGA) studies. Raman studies showed that the incorporation of Cu in the support matrix controls the extent of carbon graphitization deposited during the reaction at hand.


1972 ◽  
Vol 25 (11) ◽  
pp. 2337 ◽  
Author(s):  
JJ Batten

It is fist demonstrated that the occluded solvents and gases which are often present in RDX are expelled prior to zero reaction time of thermal decomposition. Thus they do not seriously interfere with the use of pressure increase as a measure of the extent of thermal decomposition. The rate of thermal decomposition of sublimed RDX at 195�C is then compared with the rate after the following treatments, (i) preliminary grinding of the crystals, (ii) preparation of the crystals by different techniques, (iii) mixing RDX with various solid additives, (iv) interruption of the reaction by cooling, and (v) pre-irradiation with ultraviolet light. The results indicated that treatments (i), (ii), and (iv) had little effect on the rate, whereas (iii) and (v) could markedly influence the rate. Their effects are discussed in terms of the mechanism of decomposition. The results also indicated that there was a post-irradiation reaction of RDX at ambient temperature.


2021 ◽  
Vol 119 (1) ◽  
pp. 101
Author(s):  
Yaqiong Li ◽  
Yunlong Yu ◽  
Lifeng Zhang ◽  
Zhengtao Li

The interfacial reactions between impurities (Al and Ti) and slag onset of Si purification by 51 mol% SiO2–34 mol% CaO–15 mol% MgO slag addition were studied to enhance impurity removal efficiency from Si. The Al distribution behavior at the Si/Slag interface was investigated; a short reaction time (10 s) resulted in the formation of successive SiO2–CaO–MgO–Al2O3 layers in the slag with a thickness of 10 µm; increasing the reaction time (60 s) resulted in the entire ternary slag being changed into SiO2–CaO–MgO–Al2O3 quaternary slag due to the diffusion of Al2O3. It was shown that the highest impurity removal rate of Al could be achieved at the onset of the slag refining process. Based on the Ti distribution at the Si/slag interface, the slag refinement with 51 mol% SiO2–34 mol% CaO–15 mol% MgO had no effect on Ti removal.


Foods ◽  
2019 ◽  
Vol 8 (7) ◽  
pp. 242 ◽  
Author(s):  
Kun Chen ◽  
Jiajia Zhao ◽  
Xiaohan Shi ◽  
Qayum Abdul ◽  
Zhanmei Jiang

The characterization and antioxidant activity on Maillard reaction products (MRPs) derived from xylose and bovine casein hydrolysate (BCH) was investigated at 100 °C and initial pH 8.0 as a function of reaction time. The pH values and free amino groups contents of xylose–BCH MRPs remarkably decreased with the reaction time up to 8 h, whereas their browning intensities significantly increased (p < 0.05). After 4 h of heat treatment, the fluorescence properties of xylose–BCH MRPs reached the maximum. There was a production of higher and smaller molecular substances in xylose–BCH MRPs with an increased reaction time, as analyzed by size exclusion chromatography. The 2,2-diphenyl-1-picryl-hydrazyl (DPPH) free radical scavenging capacity and ferrous reducing activity of xylose-BCH MRPs gradually increased with the reaction time extended from 0 to 8 h.


1998 ◽  
Vol 13 (6) ◽  
pp. 1485-1491 ◽  
Author(s):  
J. Y. Dai ◽  
F. H. Kaatz ◽  
P. R. Markworth ◽  
D. B. Buchholz ◽  
X. Liu ◽  
...  

The detailed structure and interfacial reaction of epitaxial Yba2Cu3O7/Y-ZrO2 (YBCO/YSZ) films grown by chemical vapor deposition (CVD) on LaAlO3 (LAO) substrates are investigated by means of high-resolution electron microscopy (HREM), analytical transmission electron microscopy, and scanning transmission electron microscopy (STEM). The epitaxial relations of YBCO/YSZ/LAO are [100]YBCO // [110]YSZ // [100]LAO and (001)YBCO // (001)YSZ // (001)LAO. The optimum atomic configuration at the YSZ/LAO interface, in which oxygen is the first atomic layer on LAO, is proposed by using HREM combined with image simulation based on the atomic structure models of the interface. Near the YBCO/YSZ interface, two localized interfacial reaction products are formed: (i) a Y-rich modulated ZrO2 structure at the surface of the YSZ film, which may be caused by the diffusion of Y into the YSZ grains; (ii) an intergranular BaZrO3 phase formed by the diffusion of Ba along the columnar grain boundaries of the YSZ film during YBCO growth.


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