Contribution of substrate to converse piezoelectric response of constrained thin films

2004 ◽  
Vol 19 (10) ◽  
pp. 2853-2858 ◽  
Author(s):  
Lang Chen ◽  
J-H. Li ◽  
J. Slutsker ◽  
J. Ouyang ◽  
A.L. Roytburd
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Finite Element ◽  
Piezoelectric Response ◽  
Element Calculation ◽  
Theoretical Estimation ◽  
Various Boundary Conditions ◽  
Total Displacement ◽  
Thick Substrate ◽  
Film Substrate

The converse piezoelectric response of a thin film constrained by a substrate is analyzed in different geometries under various boundary conditions. We considerthe effects of elastic deformation of the substrate on the total displacement of thefilm surface induced by the electric field. The change of film thickness and the bending curvature of a film/substrate couple are calculated. For a thin film island clamped on a large thick substrate, the theoretical estimation of the piezoresponse, including a local bending in the vicinity of the island/substrate interface, is in agreement with the finite element calculation.

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

Exotic Doping for Zno Thin Films: Possibility of Monolithic Optical Integrated Circuit

1999 ◽  
Vol 574 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tamaki Shimura ◽  
Toshifumi Wakano ◽  
Atsushi Ashida ◽  
Taichiro Ito
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nonlinear Optic ◽  
Integrated Circuit ◽  
Film Surface ◽  
Zno Thin Films ◽  
Process Window ◽  
Electro Optic ◽  
Film Substrate ◽  
Optical Integrated Circuit

AbstractWe propose the application of ZnO:X (X = Li, Mg, N, In, Al, Mn, Gd, Yb etc.) films for a monolithic Optical Integrated Circuit (OIC). Since ZnO exhibits excellent piezoelectric effect and has also electro-optic and nonlinear optic effects and the thin films are easily obtained, it has been studied as one of the important thin film wave guide materials especially for an acoustooptic device[1]. In terms of electro-optic and nonlinear optic effects, however, LiNbO3 or LiTaO3 is superior to ZnO. The most important issue of thin film waveguide using such ferroelectrics is optical losses at the film/substrate interface and the film surface, because the process window to control the surface morphology is very narrow due to their high deposition temperature. Since ZnO can be grown at extremely low temperature, the roughness at the surface and the interface is expected to be minimized. This is the absolute requirement especially for waveguide using a blue or ultraviolet laser. Recently, lasing at the wavelength of ultraviolet, ferroelectric and antiferromagnetic behaviors of ZnO doped with various exotic elements (exotic doping) have been reported. This paper discusses the OIC application of ZnO thin films doped with exotic elements.

scholarly journals Impact of process conditions on chemical solution deposited BNKT thin film electromechanical properties

2021 ◽  
Vol 3 (10) ◽  
Author(s):  
Kyle M. Grove ◽  
Austin Fox ◽  
David P. Cann ◽  
Song Won Ko ◽  
Peter Mardilovich ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Loss ◽  
Pyrolysis Temperature ◽  
Piezoelectric Response ◽  
Excess Properties ◽  
Process Conditions ◽  
Chemical Solution ◽  
Ramp Rate

Abstract Phase pure perovskite (1-x)Bi1/2Na1/2TiO3 – xBi1/2K1/2TiO3 (BNKT) thin films were successfully prepared via an inverse mixing order chemical solution deposition method and the impact of process conditions on film properties were observed. Process conditions evaluated included crystallization temperature and time, ramp rate, pyrolysis temperature, and cation excess. Properties measured included crystal structure, dielectric constant, dielectric loss, piezoelectric response, and ferroelectric response. A few notable trends were observed. A subtle impact on piezoelectric response was observed in films prepared using different ramp rates: 100 C per second films (d33,f = 60 ± 5 pm/V at 1 kHz), 75 °C per second films (d33,f = 55 ± 5 pm/V) and 150 C per second films (d33,f = 50 ± 5 pm/V). Films prepared using a 75 °C per second ramp rate displayed slightly higher dielectric loss (tan δ = 0.09 at 1 kHz) than films prepared using a 100 °C per second ramp rate (tan δ = 0.07 at 1 kHz) or 150 °C per second ramp rate (tan δ = 0.05 at 1 kHz). Pyrolysis temperatures greater than 350 °C are necessary to burn off organics and maximize film dielectric constant. Dielectric constant increased from 450 ± 50 at 1 kHz to 600 ± 50 at 1 kHz by increasing pyrolysis temperature from 300 to 400 °C. Excess cation amounts (for compositional control) were also evaluated and it was found films with higher amounts of Na and K excess compared to bismuth excess displayed an increase in d33,f of about 10 pm/V compared to films prepared with equivalent Bi and Na and K excess amounts. Article highlights Impact of processing conditions on inverse mixing order chemical solution deposited bismuth based thin films. Dielectric, piezoelectric, and ferroelectric properties of thin film bismuth sodium titanate-bismuth potassium titanate thin films. Developing lead-free piezoelectric actuator materials.

The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

1989 ◽  
Vol 169 ◽  
Author(s):  
K.M. Hubbard ◽  
P.N. Arendt ◽  
D.R. Brown ◽  
D.W. Cooke ◽  
N.E. Elliott ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Film Substrate ◽  
Ion Backscattering ◽  
Scanning Electron

AbstractThin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

Experimental Evaluation of the Probe Test for Measuring Thin Film Adhesion

2003 ◽  
Author(s):  
David A. Dillard ◽  
Caleb Scott ◽  
Kris Mount ◽  
Dingying Xu ◽  
Kai-Tak Wan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Finite Element ◽  
Experimental Evaluation ◽  
Polymeric Coating ◽  
Finite Element Analyses ◽  
Film Adhesion ◽  
Thin Film Adhesion ◽  
Probe Test ◽  
Interfacial Fracture Energy

A probe test is proposed to quantify the adhesion of thin films and coatings. Using a micromanipulator, a tungsten probe is advanced into the edge of a polymeric coating. Debonds initiate at the loading point and propagate into semicircular cracks at the interface as the probe slides under the coating. The size of the debond is related to the interfacial fracture energy; poorer adhesion results in larger debonds for a given probe displacement. Approximate closed-form and finite element analyses of the geometry have been conducted, along with a significant number of experiments on as-produced and environmentally-conditioned specimens. The technique is showing considerable promise for characterizing coating adhesion, and has certain advantages over existing techniques for certain application.

Characterization of Mechanical Properties of Thin Films by Nanoindentation Technique and Finite Element Simulation

2002 ◽  
Author(s):  
Zhaohui Shan ◽  
Suresh K. Sitaraman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Finite Element ◽  
Strain Hardening Exponent ◽  
Plastic Properties ◽  
Titanium Thin Film ◽  
Nanoindentation Technique ◽  
Element Simulation ◽  
Titanium Thin Films

Titanium thin films have been widely used in microelectronics due to their good adhesion to substrates, such as Silicon wafer and Quartz. However, mechanical behavior of Titanium thin films has not been well characterized. This paper presents a methodology that combines the nanoindentation technique and finite element modeling to characterize the mechanical (elastic and plastic) properties of thin film with its application on Titanium thin film deposited on silicon substrate. The results show that the elastic properties (Young’s modulus) of the Titanium thin film does not change much from the bulk Titanium, and the plastic properties (yield stress and strain hardening exponent) of the Titanium thin film are higher than those of bulk Titanium. This method is also applicable for the study of mechanical properties of other thin films and small volume materials.

Acoustic Phase Velocity Measurements along General Directions in Non-Isotropic Crystals. II. Layer Modes for Thin Films

1971 ◽  
Vol 49 (12) ◽  
pp. 1606-1610 ◽  
Author(s):  
S. L. McBride ◽  
G. W. Farnell
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lithium Niobate ◽  
Phase Velocity ◽  
Test Specimen ◽  
Gold Films ◽  
Velocity Measurements ◽  
Elastic Surface ◽  
Film Substrate ◽  
Acoustic Phase

The usefulness of the immersion–reflection technique for the measurement of the angular dependence of the dispersion curves for elastic surface waves in anisotropic thin-film, substrate combinations is demonstrated. The example chosen consists of gold films on a substrate of Y-cut lithium niobate, the latter being both highly anisotropic and piezoelectric. The velocity accuracy of the measurements is about ±0.3% and the frequency of operation is limited by the attenuation in the liquid medium in which the test specimen is immersed.

Substrate Latent Heat Effects in The Calculations for Pulsed Laser Irradiated Thin Films

1983 ◽  
Vol 13 ◽  
Author(s):  
J.J. Cao ◽  
K. Rose ◽  
O. Aina ◽  
W. Katz ◽  
J. Norton
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser ◽  
Phase Changes ◽  
Morphological Observation ◽  
Substrate Structure ◽  
Heat Effects ◽  
Film Substrate ◽  
Scanning Electron ◽  
Pulsed Laser Irradiation

ABSTRACTWe present a numerical model for the calculation of the temperature rise caused by pulsed laser irradiation of a thin film/substrate structure. This model includes phase changes in both the thin film and the substrate. The inclusion of phase changes results in more complex thermal behavior and significantly affects melt durations. This model was applied to the AuGe/GaAs system. Morphological observation using the scanning electron microscope and SIMS profiles provides experimental verification for the numerical calculations.

Principal Residual Strains as A function of Depth for Sputter Deposited Mo Thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
S. G. Malhotra ◽  
Z. U. Rek ◽  
L. J. Parfitt ◽  
S. M. Yalisove ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grazing Incidence ◽  
X Ray ◽  
X Ray Scattering ◽  
Out Of Plane ◽  
Residual Strains ◽  
Sputter Deposited ◽  
Film Substrate ◽  
Principal Strains

AbstractTraditionally, the magnitude of the stress in a thin film is obtained by measuring the curvature of the film-substrate couple; however, these techniques all measure the average stress throughout the film thickness. On a microscopic level, the details of the strain distribution as a function of depth through the thickness of the film can have important consequences in governing film quality and ultimate morphology. A new method for determining the magnitude of principal strains (strain eigenvalues) as a function of x-ray penetration depth using grazing incidence x-ray scattering for a polycrystalline thin film will be described. Results are reported for two Mo metallizations ˜ 500 Å and ˜1000 Å thick sputtered onto Si {100} substrates. The magnitude of the principal strains at several penetration depths was accomplished by an analysis of the diffraction peak shifts of at least six independent {hkl} scattering vectors from the Mo thin films. An out-of-plane strain gradient was identified in both Mo films and the strain eigenvalues were found to be anisotropic in nature. This new methodology should work with a variety of thin films and hence would provide quantitative insight into the evolution of thin film microstructure.

Analysis of the accuracy of the bulge test in determining the mechanical properties of thin films

1992 ◽  
Vol 7 (6) ◽  
pp. 1553-1563 ◽  
Author(s):  
Martha K. Small ◽  
W.D. Nix
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Finite Element ◽  
Material Properties ◽  
Deformation Behavior ◽  
Initial Conditions ◽  
Standard Technique ◽  
Bulge Test ◽  
The Finite Element Method

Since its first application to thin films in the 1950's the bulge test has become a standard technique for measuring thin film mechanical properties. While the apparatus required for the test is simple, interpretation of the data is not. Failure to recognize this fact has led to inconsistencies in the reported values of properties obtained using the bulge test. For this reason we have used the finite element method to model the deformation behavior of a thin film in a bulge test for a variety of initial conditions and material properties. In this paper we will review several of the existing models for describing the deformation behavior of a circular thin film in a bulge test, and then analyze these models in light of the finite element results. The product of this work is a set of equations and procedures for analyzing bulge test data that will improve the accuracy and reliability of this technique.

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