Improved crystallinity and optical properties of AlOx thin films by a ZnO interlayer

2003 ◽  
Vol 18 (4) ◽  
pp. 965-972 ◽  
Author(s):  
Su-Shia Lin ◽  
Jow-Lay Huang

To ascertain how the substrate influences the quality of AlOx films, AlOx films were grown on a bare glass and a ZnO-deposited glass in this study. By applying a ZnO interlayer before the AlOx deposition, AlOx films exhibited polycrystalline structure rather than amorphous as obtained by sputtering on a bare glass. For AlOx film on the ZnO-deposited glass, the transmission electron microscopy observation showed the coexistence of amorphous and polycrystalline structure, which reveals that the (122) plane in AlOx film is parallel to the surface of the substrate. The grains of the AlOx film grown on a ZnO-deposited glass comprising many small crystallites aggregated with sizes varying between 38 and 54 nm with irregular grain shapes. Besides, the ZnO interlayer with different deposition parameters had a significant effect in the diffusion interface between AlOx and ZnO. The ZnO interlayer could improve the optical transmission of AlOx films, especially when ZnO films are prepared with a high power of 200 W. Therefore, the glass/ZnO may be a good alternative substrate for producing high-quality AlOx films by controlling the epitaxial grain growth. The AlOx films grown on ZnO-deposited glasses have very good qualities in terms of crystallinity and optical properties.

2015 ◽  
Vol 6 (2/3) ◽  
pp. 154 ◽  
Author(s):  
B.W. Shivaraj ◽  
H.N. Narasimha Murthy ◽  
M. Krishna ◽  
B.M. Nagabhushana ◽  
Sushanth D. Shandilya ◽  
...  

2011 ◽  
Vol 287-290 ◽  
pp. 2308-2313 ◽  
Author(s):  
Yi Hua Sun ◽  
Chen Hui Li ◽  
Wei Hao Xiong ◽  
Cai Hua Huang

Transparent conducting aluminum-doped zinc oxide (AZO) films have been prepared on soda-lime glass substrates by radio frequency magnetron sputtering using a high density ceramic target at different substrate temperatures. The structural, morphology, electrical, and optical properties of the AZO thin films were investigated by X-ray diffraction, scanning electron microscope, Hall measurement, and optical transmission spectroscopy, and which were strongly influenced by substrate temperatures. Films with better texture, higher transmission, lower resistivity and larger carrier concentration were obtained for the samples fabricated at higher substrate temperature. The AZO film with the lowest resistivity of 4.63×10−4 Ω.cm and an average optical transmission of 92% in the visible range was deposited on the substrate heated at 450 °C. The optical bandgap depends on the deposition condition, and was in the range of 3.35~3.59 eV.


1996 ◽  
Vol 441 ◽  
Author(s):  
R. W. Moss ◽  
J. Harris ◽  
D. H. Lee ◽  
R. A. Condrate ◽  
X. W. Wang ◽  
...  

AbstractCadmium Sulfide (CdS) thin films had been fabricated by a laser deposition technique. Our previous results indicated that the hexagonal structured films could be formed at a substrate temperature of 400 C or higher. Reducing the temperature to 200 C or lower, cubic dominant films had been fabricated. To further understand the effects of other deposition parameters, CdS films were deposited at 30 C in this study. Crystal structures of the films were analyzed by Xray diffraction (XRD) and Transmission Electron Microscopy (TEM). It was found that the processing windows for the cubic films were very limited. As revealed by optical transmission measurements, the optical absorption edge of the cubic film was different from that of the hexagonal film.


2012 ◽  
Vol 725 ◽  
pp. 251-254
Author(s):  
Yuki Mizukami ◽  
D. Kosemura ◽  
M. Takei ◽  
Y. Numasawa ◽  
Y. Ohshita ◽  
...  

Raman spectroscopy and photoluminescence were performed in order to understand the optical properties of nanocrystal Si in relation to quantum confinement effects. The nanocrystal Si (nc-Si) dots in the SiO2 layer were fabricated by the H2 plasma treatment and chemical vapour deposition followed by the oxidation of the nc-Si dots surface. The post-annealing was also performed to improve the crystalline quality of nc-Si at 1050 °C for 5 and 10 min. There is a good correlation of the quantum confinement effects between the results of Raman spectroscopy and photoluminescence. The Raman spectra from nc-Si were analysed using the model of Richter et al. As a result, the sizes of the nc-Si dots were consistent with those obtained by transmission electron microscopy and X-ray diffraction. Moreover, the compressive stress in the nc-Si dots were evaluated which was induced by the SiO2 surroundings.


2013 ◽  
Vol 821-822 ◽  
pp. 845-848
Author(s):  
Jian Chen ◽  
Yi Hua Sun ◽  
Xiao Hua Sun ◽  
Cai Hua Huang

Transparent conducting aluminum-doped zinc oxide (AZO) films with different film thickness had been prepared on soda-lime glass substrates by radio frequency magnetron sputtering using a high density ceramic target. The structural, morphology, electrical, and optical properties of the AZO thin films were investigated by X-ray diffraction, scanning electron microscope, Hall-effect measurement and optical transmission spectroscopy, which were strongly influenced by film thickness. With the film thickness increasing from 140 nm to 710 nm, the resistivity decreases from 9.78 × 103 to 3.23 × 103 Ω.cm and an average optical transmission decreases from 88% to 80% in the visible range and the optical bandgap decreases from 3.47 to 3.24 eV.


Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 296
Author(s):  
Xiao-fang Qiu ◽  
Sheng-xi Zhang ◽  
Jian Zhang ◽  
Yi-cheng Zhu ◽  
Cheng Dou ◽  
...  

The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by X-ray diffraction, scanning transmission electron microscopy, Raman and photoluminescence. The effects of growth temperature on the crystal quality of HgCdTe/CdTe have been studied in detail. The HgCdTe film grown at the lower temperature of 151 °C has high crystal quality, the interface is flat and there are no micro twins. While the crystal quality of the HgCdTe grown at higher temperature of 155 °C is poor, and there are defects and micro twins at the HgCdTe/CdTe interface. The research results demonstrate that the growth temperature significantly affects the crystal quality and optical properties of HgCdTe films.


Author(s):  
Dmitrii A. Zakgeim ◽  
Dmitrii Bauman ◽  
Dmitrii Yi. Panov ◽  
Vladislav A. Spiridonov ◽  
Arina Kremleva ◽  
...  

Abstract Bulk (Al x Ga1-x )2O3 crystals with an Al fraction x in the range from 0.0 to 0.23 were successfully grown by the Czochralski method. An increase in the band gap from 4.7 eV to 5.1 eV with the rise of the Al content was demonstrated by analyzing optical transmission spectra. The crystal quality of the obtained samples was controlled by X-ray diffractometry. The appearance of crystal`s mosaic blockness was found for the Al fraction x above 0.05.


2010 ◽  
Vol 75 ◽  
pp. 43-48
Author(s):  
Ching Hong Wong ◽  
Chee Leung Mak ◽  
Kin Hung Wong

Transparent zinc oxide (ZnO) films on flexible copper-coated polyethylene terephthalate (PET) sheet have been grown by a potentiostatic cathodic deposition technique using aqueous zinc nitrate as electrolyte. ZnO films were fabricated using different deposition parameters such as applied potential, electrolyte concentration and bath temperature. Their structural and optical properties were characterized by X-ray diffractometer, scanning electron microscope, diffuse reflectance UV-VIS spectrophotometer and photoluminescence spectrometer. The effects of these deposition parameters on the structural and optical properties of the fabricated ZnO films have been investigated. On the basis of our results, we demonstrate that high quality ZnO films have been successfully grown on flexible polymeric substrates using a low temperature potentiostatic cathodic deposition technique.


Author(s):  
K. Shibatomi ◽  
T. Yamanoto ◽  
H. Koike

In the observation of a thick specimen by means of a transmission electron microscope, the intensity of electrons passing through the objective lens aperture is greatly reduced. So that the image is almost invisible. In addition to this fact, it have been reported that a chromatic aberration causes the deterioration of the image contrast rather than that of the resolution. The scanning electron microscope is, however, capable of electrically amplifying the signal of the decreasing intensity, and also free from a chromatic aberration so that the deterioration of the image contrast due to the aberration can be prevented. The electrical improvement of the image quality can be carried out by using the fascionating features of the SEM, that is, the amplification of a weak in-put signal forming the image and the descriminating action of the heigh level signal of the background. This paper reports some of the experimental results about the thickness dependence of the observability and quality of the image in the case of the transmission SEM.


Author(s):  
T.E. Pratt ◽  
R.W. Vook

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.


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