Effects of Postdeposition in situ Heat Treatment on the Properties of Low Dielectric Constant Plasma Polymer Films Deposited Using Decahydronaphthalene and Tetraethyl Orthosilicate as the Precursors

2002 ◽  
Vol 17 (6) ◽  
pp. 1371-1375 ◽  
Author(s):  
Jaeyoung Yang ◽  
Cheonman Shim ◽  
Donggeun Jung
Keyword(s):  
Heat Treatment ◽  
Dielectric Constant ◽  
Polymer Films ◽  
Chemical Vapor ◽  
Relative Dielectric Constant ◽  
Tetraethyl Orthosilicate ◽  
Plasma Polymer ◽  
Low Dielectric ◽  
Heat Treated

We investigated effects of postdeposition heat treatment (HT) on the properties of plasma polymer films deposited by plasma-enhanced chemical vapor deposition using a mixture of decahydronaphthalene and tetraethyl orthosilicate as the precursors, which were referred to as plasma-polymerized decahydronaphthalene:tetraethyl orthosilicate (PPDHN:TEOS) films. HTs at 350, 450, and 500 °C decreased the relative dielectric constant k of the PPDHN:TEOS films from 3.16, the k value of the as-deposited film, to 2.82, 2.72, and 3.02, respectively. The change of k value as a function of HT temperature was correlated with the change of Fourier transform infrared absorption peaks of O–H, C = O, and Si-related groups. As the HT temperature increased, the thermal stability of the PPDHN:TEOS film increased. PPDHN:TEOS films, as-deposited or heat treated, showed leakage current density in the order of 10−7 A/cm2 at 1 MV/cm.

Capacitance-Voltage Characterization of Pulsed Plasma Polymerized Allylamine Dielectrics

2002 ◽  
Vol 736 ◽  
Author(s):  
Yifan Xu ◽  
Paul Berger ◽  
Jai Cho ◽  
Richard B. Timmons
Keyword(s):  
Heat Treatment ◽  
Dielectric Constant ◽  
Film Deposition ◽  
Pulsed Plasma ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Heat Treated ◽  
Capacitance Voltage ◽  
Mobile Ions

ABSTRACTPolyallylamine films, deposited on Si wafers by radio frequency (RF) pulsed plasma polymerization (PPP), were employed as insulating layers of metal-insulator-semiconductor (MIS) capacitors. The insulating polymer films were deposited at substrate temperatures of 25°C and 100°C. Multiple frequency capacitance-voltage (C-V) measurements indicated that an in-situ heat treatment during film deposition increased the insulator dielectric constant. The dielectric constant, calculated from the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. For both sample sets, the I-V data demonstrate a low leakage current value (<20fA) up to 100V with an area of 0.0307 mm2, resulting in a current density of <0.65 pA/mm2. Hysteresis in the C-V curves with differing sweep directions was more pronounced for in-situ heat-treated samples indicative of positive mobile ions.

Effects of He/H2 Plasma Treatment on Properties of SiCOH Films Deposited with the 1,1,1,3,5,7,7,7- Octamethyl-3,5-Bis(Trimethylsiloxy) Tetrasiloxane Precursor

2020 ◽  
Vol 20 (11) ◽  
pp. 6706-6712
Author(s):  
Yoonsoo Park ◽  
Hyuna Lim ◽  
Sungyool Kwon ◽  
Younghyun Kim ◽  
Wonjin Ban ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Plasma Treatment ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Relative Dielectric Constant ◽  
Chemical Compositions ◽  
Cage Structure ◽  
Inductively Coupled ◽  
Low Dielectric ◽  
Semiconductor Chips

Low-dielectric-constant SiCOH films fabricated using plasma enhanced chemical vapor deposition (PECVD) are widely used as inter-metallic dielectric (IMD) layers in interconnects of semiconductor chips. In this work, SiCOH films were deposited with 1,1,1,3,5,7,7,7-octamethyl-3,5-bis(trimethylsiloxy)tetrasiloxane (OMBTSTS), and plasma treatment was performed by an inductively coupled plasma (ICP) system with mixture of He and H2. The values of relative dielectric constant (k) of the as-deposited SiCOH films ranged from 2.64 to 4.19. The He/H2 plasma treatment led to a reduction of the k values of the SiCOH films from 2.64–4.19 to 2.07–3.94. To investigate the impacts of the He/H2 plasma treatment on the SiCOH films, the chemical compositions and structures of the as-deposited and treated the SiCOH films were compared by Fourier transform infrared spectroscopy. The experimental results indicate that the k value of the SiCOH films was decreased, there was a proportional increase in pore-related Si–O–Si structure, which is commonly called the cage structure with lager angle than 144°, after He/H2 plasma treatment. The He/H2 plasma treatment was considered to have reduced the k value by forming pores that could be represented by the cage structure. On the other hand, the leakage current density of the SiCOH films was slightly degraded by He/H2 plasma treatment, however, this was tolerable for IMD application. Concludingly the He/H2 plasma treated SiCOH film has the lowest relative dielectric constant (k~2.08) when the most highly hydrocarbon removal and cage structure formation increased.

Sensitivity of Thermal Conductivity of Carbon Nanotubes to Defect Concentrations and Heat-Treatment

2012 ◽  
Author(s):  
Michael F. P. Bifano ◽  
Jungkyu Park ◽  
Vikas Prakash
Keyword(s):  
Thermal Conductivity ◽  
Heat Treatment ◽  
Interatomic Potential ◽  
Side Wall ◽  
Chemical Vapor ◽  
Md Simulations ◽  
Heat Treated ◽  
Side Walls ◽  
Non Equilibrium Molecular Dynamics ◽  
Vacancy Concentrations

In the present study, classical MD simulations using reverse non-equilibrium molecular dynamics with the AIREBO interatomic potential are used to investigate the sensitivity of thermal conductivity in SWCNTs to side-wall defect concentration and heat-treatment. Two types of defects are investigated. First, the thermal conductivity of (6,6) SWCNTs is obtained as a function of concentration of chemisorbed hydrogen adatoms. Secondly, the thermal conductivity is obtained as a function of point-vacancy concentrations. The results of the studies show that 2 atom% of hydrogenation and 1.5–2% vacancy concentrations have very similar detrimental effects on the thermal conductivity of SWCNT. Vacancy repair is evident with heat treatment, and heat-treatments at 3000°C for up to 22 ns are found to transform point vacancies into various types of non-hexagonal side-wall defects; this vacancy repair is accompanied by a ca. 10% increase in thermal conductivity. Thermal conductivity measurements in both heat-treated and non-heat treated chemical vapor deposition grown MWCNTs are also reviewed. The results suggest that CNT thermal conductivity can be drastically increased if measures are taken to remove common defects from the SWCNT side-walls.

Stress Development in Low Dielectric Constant Silica Films During Drying and Heating Process

1999 ◽  
Vol 594 ◽  
Author(s):  
Mengcheng Lu ◽  
C. Jeffrey Brinker
Keyword(s):  
Dielectric Constant ◽  
Tensile Stress ◽  
Sol Gel ◽  
Low Dielectric Constant ◽  
Heating Process ◽  
Residual Tensile Stress ◽  
Silica Films ◽  
Stress Development ◽  
Low Dielectric

AbstractLow dielectric constant silica films are made using a surfactant templated sol-gel process (K∼2.5) or an ambient temperature and pressure aerogel process (K∼1.5). This paper will present the in-situ measurement and analysis of stress development during the making of these films, from the onset of drying till the end of heating. The drying stress is measured by a cantilever beam technique; the thermal stress is measured by monitoring the wafer curvature using a laser deflection method. During the course of drying, the surfactant templated films experience a low drying stress due to the influence of the surfactant on surface tension and extent of siloxane condensation. The aerogel films first develop a biaxial tensile stress due to solidification and initial drying. At the final stage of drying where the drying stress vanishes, dilation of the film recreates the porosity of the wet gel state, reducing the residual stress to zero. For the surfactant templated films, very small residual tensile stress remains after the heat treatment is finished (∼30MPa). Aerogel film has almost no measurable stress developed in the calcination process. In situ spectroscopic ellipsometry analysis during drying and heating, and TGA/DTA are all used to help understand the stress development.

Reliability of Cu/WN thin Films Deposited on Low Dielectric Constant SiOF ILD

1998 ◽  
Vol 511 ◽  
Author(s):  
Seoghyeong Lee ◽  
Dong Joon Kim ◽  
Sung-Hoon Yang ◽  
Jeongwon Park ◽  
Seil Sohn ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Plasma Treatment ◽  
Silicon Oxide ◽  
Chemical Properties ◽  
Surface Oxidation ◽  
Relative Dielectric Constant ◽  
Low Dielectric ◽  
Sufficient Power ◽  
Metal Interconnects ◽  
Interconnect System

ABSTRACTThe effect of the post plasma treatment on the dielectric properties and reliability of fluorine doped silicon oxide (SiOF) films was studied. Also, the thermal stability of a Cu/WN interconnect system with SiOF intermetal dielectrics was examined by RTA. The surface roughness of SiOF films increased with the increasing plasma treatment power due to ion bombardment effect during the plasma treatment. As the plasma treatment power increased, the dielectric constant increased from 3.16 to 3.43, while the change in the relative dielectric constant of the plasma treated films by the boiling treatment was decreased in magnitude. Furthermore, the chemical properties of the plasma treated SiOF films near the top layer tend to resemble those of thermal oxides by the plasma treatment of sufficient power because of the reduction in the Si-F bonding in the films. In the case of Cu/WN/SiOF/Si multilayer structure, surface oxidation and densification due to the plasma treatment seemed to play an important role in protecting the interdiffusion between SiOF and metal interconnects.

Effect of heat treatment and heat treatment in combination with lignosulfonate on in situ rumen degradability of canola cake crude protein, lysine, and methionine

2020 ◽  
Vol 100 (1) ◽  
pp. 165-174 ◽  
Author(s):  
Piotr Micek ◽  
Katarzyna Słota ◽  
Paweł Górka
Keyword(s):  
Heat Treatment ◽  
High Temperature ◽  
Crude Protein ◽  
Dry Matter ◽  
Increased Temperature ◽  
Heat Treated ◽  
Cold Pressed ◽  
Temperature Heating ◽  
High Temperature Heating

The aim of this study was to determine the effect of heat treatment alone or in combination with the addition of lignosulfonate (LSO3) on canola cake protein, lysine, and methionine degradation in the rumen. Cold-pressed canola cake was left untreated, heated at 90, 110, 130, or 150 °C, or processed with 5% of LSO3 (in dry matter) and then heated. Effective rumen degradability of crude protein (CP), lysine, and methionine was less for treated than untreated canola cake (P < 0.05) and decreased with increased temperature of heating, but particularly when canola cake was heated at 150 °C (quadratic, P < 0.01). In general, effective rumen degradability of CP, lysine, and methionine was less for canola cake heated at 130 °C in combination with LSO3 compared with canola cake heat treated only (quadratic × LSO3 interaction, P ≤ 0.07). Results of this study indicate that high temperature heating (130 °C or greater for 60 min) may be necessary to protect canola cake protein from degradation in the rumen, and the combination of heat treatment and LSO3 may be more effective in protecting canola cake protein, lysine, and methionine from degradation in the rumen than the use of heat treatment only.

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