Effect of substrate pregrowth treatments on characteristics of low-temperature diamondlike carbon films prepared by very-high-frequency chemical vapor deposition

2002 ◽  
Vol 17 (2) ◽  
pp. 451-455
Author(s):  
Zafar Waqar ◽  
Alexander Nikolaivech Titkov ◽  
Alexander Nikolaivech Andronov ◽  
Andrey Kosarev ◽  
Igor Makarenko
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Very High Frequency ◽  
Ceramic Substrates ◽  
Diamondlike Carbon ◽  
The Impact ◽  
Very High

Diamondlike carbon (DLC) films were grown on Si and ceramic substrates by very-high-frequency chemical vapor deposition at temperature of approximately 250 °C. Thin metal coatings from Ti, Ni, Pt, and Cu were deposited on the substrates before DLC film deposition. The impact of the pregrowth treatments of the substrates on surface morphology and emission properties of the grown DLC films was studied. The films deposited on ceramic substrates pretreated by Ti, Ni, and Pt coatings, with grainlike structures, demonstrated good emission currents and low threshold voltages among the deposited DLC films.

Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures

2010 ◽  
Vol 663-665 ◽  
pp. 336-339
Author(s):  
Jie Song ◽  
Yan Qing Guo ◽  
Xiang Wang ◽  
Yi Xiong Zhang ◽  
Chao Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Maximum Intensity ◽  
Silicon Oxynitride ◽  
Very High Frequency ◽  
Annealing Temperatures ◽  
Very High

Silicon oxynitride films were deposited in very-high-frequency (40.68 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD), and subsequently annealed between 400 and 1200°C in N2 ambient. The effect of annealing temperature on the PL characteristics of the samples was investigated. The experimental results reveal that a broad PL peak around 430 nm (2.88eV) appears in all of the samples. The maximum intensity of this broad PL peak was obtained in the sample annealed at 400°C. The PL characteristics of the annealed samples were discussed.

Dual comb-type electrodes as a plasma source for very high frequency plasma enhanced chemical vapor deposition

2010 ◽  
Vol 518 (8) ◽  
pp. 2124-2127 ◽  
Author(s):  
Doo Sup Hwang ◽  
Seung Yoon Lee ◽  
Heon Min Lee ◽  
Sang Jin Kim ◽  
Gil Jun Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Plasma Source ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High
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