Effects of precursor additives on the stability of plasma enhanced chemical vapor deposited a-GeC(O):H films

2002 ◽  
Vol 17 (2) ◽  
pp. 367-375 ◽  
Author(s):  
A. Grill ◽  
S. Guilley ◽  
V. Patel ◽  
K. Babich
Keyword(s):  
Fourier Transform ◽  
Chemical Vapor Deposition ◽  
Direct Current ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Index Of Refraction ◽  
Negative Bias ◽  
Optical Gap ◽  
Chemical Vapor Deposited ◽  
The Stability

Germanium- and carbon-based films were deposited by plasma-enhanced chemical vapor deposition from tetramethylgermane (TMGe) with additions of oxygen, hydrogen, or argon. The index of refraction, extinction coefficient, and optical gap and Fourier transform infrared spectra of the films were measured as well as their stability in regular ambiance. It was found that the films deposited from pure TMGe were stable in time only if deposited at a negative bias above −250 V direct current. Films deposited at a bias of −150 V direct current could be stabilized by significant additions of oxygen to the plasma and complete stabilization was achieved at O2/TMGe ratios larger than 3 in the gas feed when GeOx films containing small amounts of C and H were obtained. Additions of hydrogen or argon to TMGe had only slight effects in improving the stability off the films.

Fluid modeling for plasma-enhanced direct current chemical vapor deposition

2015 ◽  
Vol 10 (1) ◽  
pp. 012503 ◽  
Author(s):  
Rinat R. Ismagilov ◽  
Ildar R. Khamidullin ◽  
Victor I. Kleshch ◽  
Sergei A. Malykhin ◽  
Andrey M. Alexeev ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Direct Current ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fluid Modeling

Fluid modeling for plasma-enhanced direct current chemical vapor deposition

2015 ◽  
Vol 10 (1) ◽  
pp. 103598
Author(s):  
Rinat R. Ismagilov ◽  
Ildar R. Khamidullin ◽  
Victor I. Kleshch ◽  
Sergei A. Malykhin ◽  
Andrey M. Alexeev ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Direct Current ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fluid Modeling

Chemical-Vapor-Deposited Materials for High Thermal Conductivity Applications

MRS Bulletin ◽  
2001 ◽  
Vol 26 (6) ◽  
pp. 458-463 ◽  
Author(s):  
Jitendra S. Goela ◽  
Nathaniel E. Brese ◽  
Michael A. Pickering ◽  
John E. Graebner
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Thermal Conductivity ◽  
Solid Materials ◽  
Chemical Vapor Deposited

Chemical vapor deposition (CVD) is an attractive method for producing bulk and thin-film materials for a variety of applications. In this method, gaseous reagents condense onto a substrate and then react to produce solid materials. The materials produced by CVD are theoretically dense, highly pure, and have other superior properties.

Low pressure chemical vapor deposition of B-N-C-H films from triethylamine borane complex

1995 ◽  
Vol 10 (2) ◽  
pp. 320-327 ◽  
Author(s):  
R.A. Levy ◽  
E. Mastromatteo ◽  
J.M. Grow ◽  
V. Paturi ◽  
W.P. Kuo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Apparent Activation Energy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Index Of Refraction ◽  
Arrhenius Behavior ◽  
Pressure Chemical

In this study, films consisting of B-N-C-H have been synthesized by low pressure chemical vapor deposition using the liquid precursor triethylamine borane complex (TEAB) both with and without ammonia. When no NH3 is present, the growth rate was observed to follow an Arrhenius behavior in the temperature range of 600 to 800 °C with an apparent activation energy of 11 kcal/mol. A linear dependence of growth rate is observed as a function of square root of flow rate for the TEAB range of 20 to 60 sccm, indicating that the reaction rate is controlled by the adsorption of borane. The addition of NH3 to TEAB had the effect of lowering the deposition temperature down to 300 °C and increasing the apparent activation energy to 22 kcal/mol. Above 650 °C, the carbon concentration of the deposits increased significantly, reflecting the breakup of the amine molecule. X-ray diffraction measurements indicated the films to be in all cases amorphous. Infrared spectra of the films showed absorption peaks representing the vibrational modes of B-N, B-N-B, B-H, and N-H. The index of refraction varied between 1.76 and 2.47, depending on composition of the films. Films deposited with no NH3 above 700 °C were seen to be compressive while films below that temperature were tensile. In the range of 350 to 475 °C, the addition of NH3 to TEAB resulted in films that were mildly tensile, while below 325 °C and above 550 °C, the films were found to be compressive. Both the hardness and Young's modulus of the films decreased with higher temperatures, reflecting the influence of the carbon presence.

Intermittent growth of a diamond film by direct current hot cathode plasma chemical vapor deposition

Carbon ◽  
2013 ◽  
Vol 51 ◽  
pp. 437 ◽  
Author(s):  
Hong-wei Jiang ◽  
Hai-liang Huang ◽  
Xiang-hua Jia ◽  
Long-cheng Yin ◽  
Yu-qiang Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Direct Current ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Cathode Plasma ◽  
Plasma Chemical Vapor Deposition
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