Study of Stresses in Thin Silicon Wafers with Near-infraredphase Stepping Photoelasticity
2002 ◽
Vol 17
(1)
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pp. 36-42
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Keyword(s):
This paper reports on a study of stress in thin silicon plates sectioned from wafers by a near-infrared transmission technique. Phase stepping was incorporated to determine the magnitude and orientation of stress from fractional birefringence fringe images. The anisotropic relative optic-stress coefficient of (100) silicon was determined and the limitation of the stress orientation measurement is discussed.
Keyword(s):
1994 ◽
Vol 2
(4)
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pp. 213-221
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2012 ◽
Vol 420
(1)
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pp. 205-209
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