Piezoresistivity of conducting polyaniline/BaTiO3 composites

2001 ◽  
Vol 16 (7) ◽  
pp. 1982-1988 ◽  
Author(s):  
R. C. Patil ◽  
S. Radhakrishnan ◽  
Sushama Pethkar ◽  
K. Vijaymohanan
Keyword(s):  
Charge Transport ◽  
Transport Process ◽  
Polymerization Reaction ◽  
Charge Transport Mechanism ◽  
Conducting Material ◽  
Large Hysteresis ◽  
Current Voltage ◽  
Conducting Polyaniline ◽  
Current Voltage Characteristics

Conducting polyaniline/barium titanate (PANI/BaTiO3) composites exhibiting piezoresistivity properties have been synthesized by the in situ deposition technique by placing a fine grade powder of BaTiO3 in the polymerization reaction mixture. The polyaniline was formed preferentially on the ceramic particles giving a much higher yield for PANI than in absence of the BaTiO3 These composites exhibited piezoresistivity with the piezosensitivity being maximum at a certain composition. The current–voltage characteristics clearly revealed a nonlinear space charge controlled charge transport process. A large hysteresis in these characteristics was also observed which was dependent on the BaTiO3 content in a composite. The various results have been explained on the basis of the charge transport mechanism in the heterogeneous conducting material having insulating domains dispersed in it.

scholarly journals Влияние водорода на электрические свойства структур Pd/InP

2019 ◽  
Vol 53 (10) ◽  
pp. 1427
Author(s):  
В.А. Шутаев ◽  
В.Г. Сидоров ◽  
Е.А. Гребенщикова ◽  
Л.К. Власов ◽  
А.А. Пивоварова ◽  
...  
Keyword(s):  
Charge Transport ◽  
Hydrogen Concentration ◽  
Potential Barrier Height ◽  
Exponential Dependence ◽  
Charge Transport Mechanism ◽  
Transport Mechanisms ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Cutoff Voltage ◽  
Gas Medium

AbstractThe influence of hydrogen on the electrical properties of Pd /n -InP and Pd/oxide/ n -InP structures is studied. It is found that a variation in the cutoff voltage $$\Delta {{U}_{{{\text{cut-off}}}}}$$ in the current–voltage characteristics of the structures under study upon exposure to hydrogen with concentrations of 0–1 vol % in a nitrogen–hydrogen mixture is described by the exponential dependence: $$\Delta {{U}_{{{\text{cut-off}}}}}$$ = a [1 – exp(– b ⋅ N _H)], where N _H is the hydrogen concentration (vol %), and a and b are constants dependent on the type of structures. It is shown that a decisive influence on how the potential-barrier height changes in the Pd / InP and Pd / oxide / InP structures in the presence of H_2 in a gas medium is exerted by a change in the Pd work function in an atmosphere of hydrogen. It is found that, in the structures under study, tunneling and thermal-tunneling charge-transport mechanisms operate at 90–300 K in the presence of hydrogen and without it. With increasing hydrogen concentration in the gas mixture, the predominance of the tunneling charge-transport mechanism becomes more pronounced.

scholarly journals Probing Charge Transport Difference in Parallel and Vertical Layered Electronics with Thin Graphite Source/Drain Contacts

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jiayi Li ◽  
Ko-Chun Lee ◽  
Meng-Hsun Hsieh ◽  
Shih-Hsien Yang ◽  
Yuan-Ming Chang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Low Frequency ◽  
Electrical Performance ◽  
Transport Mechanisms ◽  
Temperature Dependent ◽  
Conducting Material ◽  
Current Voltage ◽  
Fundamental Understanding ◽  
Current Voltage Characteristics ◽  
Insight Into

AbstractIn the present study, we aim to help improve the design of van der Waals stacking, i.e., vertical 2D electronics, by probing charge transport differences in both parallel and vertical conducting channels of layered molybdenum disulfide (MoS2), with thin graphite acting as source and drain electrodes. To avoid systematic errors and variable contact contributions to the MoS2 channel, parallel and vertical electronics are all fabricated and measured on the same conducting material. Large differences in the on/off current ratio, mobility, and charge fluctuations, between parallel and vertical electronics are evident in electrical performance as well as in charge transport mechanisms. Further insights are drawn from a well-constrained analysis of both temperature-dependent current-voltage characteristics and low-frequency (LF) current fluctuations. This work offers significant insight into the fundamental understanding of charge transport and the development of future layered-materials-based integration technology.

In Situ Probing of the Charge Transport Process at the Polymer/Fullerene Heterojunction Interface

2015 ◽  
Vol 119 (45) ◽  
pp. 25598-25605 ◽  
Author(s):  
Haihua Xu ◽  
Ting Xiao ◽  
Jun Li ◽  
Jiangquan Mai ◽  
Xinhui Lu ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Process

scholarly journals High electronic couplings of single mesitylene molecular junctions

2015 ◽  
Vol 6 ◽  
pp. 2431-2437 ◽  
Author(s):  
Yuki Komoto ◽  
Shintaro Fujii ◽  
Tomoaki Nishino ◽  
Manabu Kiguchi
Keyword(s):  
Charge Transport ◽  
Channel Model ◽  
Single Channel ◽  
Molecular Junctions ◽  
Liquid Environment ◽  
Resonant Tunnelling ◽  
Current Voltage ◽  
Electronic Conductance ◽  
Current Voltage Characteristics ◽  
High Conductance

We report on an experimental analysis of the charge transport properties of single mesitylene (1,3,5-trimethylbenzene) molecular junctions. The electronic conductance and the current–voltage characteristics of mesitylene molecules wired into Au electrodes were measured by a scanning tunnelling microscopy-based break-junction method at room temperature in a liquid environment. We found the molecular junctions exhibited two distinct conductance states with high conductance values of ca. 10−1 G 0 and of more than 10−3 G 0 (G 0 = 2e 2/h) in the electronic conductance measurements. We further performed a statistical analysis of the current–voltage characteristics of the molecular junctions in the two states. Within a single channel resonant tunnelling model, we obtained electronic couplings in the molecular junctions by fitting the current–voltage characteristics to the single channel model. The origin of the high conductance was attributed to experimentally obtained large electronic couplings of the direct π-bonded molecular junctions (ca. 0.15 eV). Based on analysis of the stretch length of the molecular junctions and the large electronic couplings obtained from the I–V analysis, we proposed two structural models, in which (i) mesitylene binds to the Au electrode perpendicular to the charge transport direction and (ii) mesitylene has tilted from the perpendicular orientation.

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