Analysis of Schottky emission electric charge transport mechanism in Cu-Lu2O3-Cu MIM structure by temperature dependent current-voltage characteristics

2019 ◽  
Vol 102 ◽  
pp. 113409
Author(s):  
Shahnaz Akbar ◽  
Jolly Jacob ◽  
Khalid Mahmood ◽  
M.F. Wasiq ◽  
Ghulam Hassnain Jaffari ◽  
...  
Keyword(s):  
Charge Transport ◽  
Electric Charge ◽  
Transport Mechanism ◽  
Schottky Emission ◽  
Charge Transport Mechanism ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

2016 ◽  
Vol 858 ◽  
pp. 1170-1173 ◽  
Author(s):  
Giuseppe Greco ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Domenico Corso ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Schottky Barrier Height ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Current Voltage Characteristics ◽  
Gan Heterostructure

In this paper, the electrical properties of different metal/p-GaN contacts (Ti/Al, TiN/Ti/Al and Ni/Au) have been investigated to get a deeper understanding of the behavior of p-GaN/AlGaN/GaN heterostructures for normally-off HEMTs. In particular, the study of the temperature dependent current-voltage characteristics allowed to identify the dominant carrier transport mechanism at the metal/p-GaN interface (Thermionic Field Emission). From the fit of the experimental current-voltage data it was possible to determine the Schottky barrier height values for the three systems, 2.08 eV (Ti/Al), 1.57 eV (TiN/Ti/Al) and 1.89 eV (Ni/Au). Hence, choosing the highest barrier height contact (Ti/Al) as gate electrode on a p-GaN/AlGaN/GaN heterostructure, optimized based on simulations, allowed to obtain devices with a normally-off behavior and a positive Vth of +1.3 V.

scholarly journals Влияние водорода на электрические свойства структур Pd/InP

2019 ◽  
Vol 53 (10) ◽  
pp. 1427
Author(s):  
В.А. Шутаев ◽  
В.Г. Сидоров ◽  
Е.А. Гребенщикова ◽  
Л.К. Власов ◽  
А.А. Пивоварова ◽  
...  
Keyword(s):  
Charge Transport ◽  
Hydrogen Concentration ◽  
Potential Barrier Height ◽  
Exponential Dependence ◽  
Charge Transport Mechanism ◽  
Transport Mechanisms ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Cutoff Voltage ◽  
Gas Medium

AbstractThe influence of hydrogen on the electrical properties of Pd /n -InP and Pd/oxide/ n -InP structures is studied. It is found that a variation in the cutoff voltage $$\Delta {{U}_{{{\text{cut-off}}}}}$$ in the current–voltage characteristics of the structures under study upon exposure to hydrogen with concentrations of 0–1 vol % in a nitrogen–hydrogen mixture is described by the exponential dependence: $$\Delta {{U}_{{{\text{cut-off}}}}}$$ = a [1 – exp(– b ⋅ N _H)], where N _H is the hydrogen concentration (vol %), and a and b are constants dependent on the type of structures. It is shown that a decisive influence on how the potential-barrier height changes in the Pd / InP and Pd / oxide / InP structures in the presence of H_2 in a gas medium is exerted by a change in the Pd work function in an atmosphere of hydrogen. It is found that, in the structures under study, tunneling and thermal-tunneling charge-transport mechanisms operate at 90–300 K in the presence of hydrogen and without it. With increasing hydrogen concentration in the gas mixture, the predominance of the tunneling charge-transport mechanism becomes more pronounced.

Electronic transport mechanism in polydiacetylene crystals — variable range hopping or phonon-assisted tunnelling

Open Physics ◽  
2007 ◽  
Vol 5 (1) ◽  
Author(s):  
Povilas Pipinys ◽  
Antanas Kiveris
Keyword(s):  
Electronic Transport ◽  
Transport Mechanism ◽  
Rate Dependence ◽  
Experimental Results ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Variable Range ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
High And Low Temperatures

AbstractExperimental results on the current-voltage characteristics of polydiacetylene (PDA) single crystals reported by Aleshin et al [Phys. Rev. Vol. B 69, (2004) art. 214203] are reinterpreted in terms of the phonon-assisted electron tunnelling model. It is shown that the experimental results, measured in the temperature range from 1.8 K to 300 K are consistent with the tunnelling rate dependence on field strength, computed for the same range of temperatures. An advantage of this model over that of Aleshin et al, using the variable range hopping (VRH) model, is the possibility of describing the behaviour of I — V data measured at both high and low temperatures with the same set of parameters characterizing this material. This assertion is confirmed by comparison of the temperature-dependent current-voltage data extracted from Aleshin et al’s work with tunnelling rate dependence on temperature, computed using two different expressions of the phonon-assisted tunnelling theory. The temperature dependence of the conductivity of an ion implanted PDA crystals [B. S. Elman et al, Appl. Phys. Lett., Vol. 46, (1985) p. 100] and polypyrrole [P. Dutta et al, Synth. Met., Vol. 139 (2003) p. 201] are also explained on the basis of this model.

scholarly journals Probing Charge Transport Difference in Parallel and Vertical Layered Electronics with Thin Graphite Source/Drain Contacts

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jiayi Li ◽  
Ko-Chun Lee ◽  
Meng-Hsun Hsieh ◽  
Shih-Hsien Yang ◽  
Yuan-Ming Chang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Low Frequency ◽  
Electrical Performance ◽  
Transport Mechanisms ◽  
Temperature Dependent ◽  
Conducting Material ◽  
Current Voltage ◽  
Fundamental Understanding ◽  
Current Voltage Characteristics ◽  
Insight Into

AbstractIn the present study, we aim to help improve the design of van der Waals stacking, i.e., vertical 2D electronics, by probing charge transport differences in both parallel and vertical conducting channels of layered molybdenum disulfide (MoS2), with thin graphite acting as source and drain electrodes. To avoid systematic errors and variable contact contributions to the MoS2 channel, parallel and vertical electronics are all fabricated and measured on the same conducting material. Large differences in the on/off current ratio, mobility, and charge fluctuations, between parallel and vertical electronics are evident in electrical performance as well as in charge transport mechanisms. Further insights are drawn from a well-constrained analysis of both temperature-dependent current-voltage characteristics and low-frequency (LF) current fluctuations. This work offers significant insight into the fundamental understanding of charge transport and the development of future layered-materials-based integration technology.

Piezoresistivity of conducting polyaniline/BaTiO3 composites

2001 ◽  
Vol 16 (7) ◽  
pp. 1982-1988 ◽  
Author(s):  
R. C. Patil ◽  
S. Radhakrishnan ◽  
Sushama Pethkar ◽  
K. Vijaymohanan
Keyword(s):  
Charge Transport ◽  
Transport Process ◽  
Polymerization Reaction ◽  
Charge Transport Mechanism ◽  
Conducting Material ◽  
Large Hysteresis ◽  
Current Voltage ◽  
Conducting Polyaniline ◽  
Current Voltage Characteristics

Conducting polyaniline/barium titanate (PANI/BaTiO3) composites exhibiting piezoresistivity properties have been synthesized by the in situ deposition technique by placing a fine grade powder of BaTiO3 in the polymerization reaction mixture. The polyaniline was formed preferentially on the ceramic particles giving a much higher yield for PANI than in absence of the BaTiO3 These composites exhibited piezoresistivity with the piezosensitivity being maximum at a certain composition. The current–voltage characteristics clearly revealed a nonlinear space charge controlled charge transport process. A large hysteresis in these characteristics was also observed which was dependent on the BaTiO3 content in a composite. The various results have been explained on the basis of the charge transport mechanism in the heterogeneous conducting material having insulating domains dispersed in it.

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