Processing of highly oriented lithium niobate films through chemical solution deposition

2001 ◽  
Vol 16 (4) ◽  
pp. 1155-1162 ◽  
Author(s):  
Satomi Ono ◽  
Shin-Ichi Hirano
Keyword(s):  
Heat Treatment ◽  
Acetic Acid ◽  
Lithium Niobate ◽  
Chemical Solution Deposition ◽  
Crystallization Behavior ◽  
Precursor Solution ◽  
Chemical Solution ◽  
Solution Deposition

A precursor solution for processing lithium niobate (LiNbO3) films was prepared from lithium niobium ethoxides through modification with acetic acid in hydrolysis. Homogeneous gel films were spin-coated on various substrates. Highly oriented LiNbO3 films were crystallized on sapphire and Pt-coated substrates by heat treatment at 500 °C. Crystallization behavior of the LiNbO3 films depended on the orientation of platinum under-layer films. LiNbO3 films crystallized with preferred (001) orientation on Pt(111) layers, while LiNbO3 films crystallized with preferred (113) orientation on Pt(100) layers. LiNbO3 films prepared on Si(111), SiO2, and MgO(100) substrates showed polycrystalline characteristics with less orientation by heat treatment at 500 °C.

Deposition of rare earth tantalate buffers on textured Ni-W substrates for YBCO coated conductor using chemical solution deposition approach

2006 ◽  
Vol 21 (3) ◽  
pp. 767-773 ◽  
Author(s):  
M.S. Bhuiyan ◽  
M. Paranthaman ◽  
A. Goyal ◽  
L. Heatherly ◽  
D.B. Beach
Keyword(s):  
Rare Earth ◽  
Chemical Solution Deposition ◽  
Precursor Solution ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ybco Coated Conductors

Epitaxial films of rare-earth (RE = La, Ce, Eu, and Gd) tantalates, RE3TaO7 with pyrochlore structures were grown on biaxially textured nickel-3 at.% tungsten (Ni-W) substrates using chemical solution deposition (CSD) process. Precursor solution of 0.3∼0.4 M concentration of total cations were spin coated on to short samples of Ni-W substrates and the films were crystallized at 1050∼1100 °C in a gas mixture of Ar- 4% H2 for 15 to 60 min. X-ray studies show that the films of pyrochlore RE tantalate films are highly textured with cube-on-cube epitaxy. Improved texture was observed in case of lanthanum tantalate (La3TaO7) film grown on Ni-W substrates. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) investigations of RE3TaO7 films reveal a fairly dense and smooth microstructure without cracks and porosity. The rare-earth tantalate layers may be potentially used as buffer layers for YBa2Cu3O7-δ (YBCO) coated conductors.

Synthesis of Sr2KNb5O15 Thin Films by Chemical Solution Deposition Method

1999 ◽  
Vol 14 (4) ◽  
pp. 1495-1502 ◽  
Author(s):  
Wataru Sakamoto ◽  
Toshinobu Yogo ◽  
Takae Kuroyanagi ◽  
Shin-ichi Hirano
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Tungsten Bronze ◽  
Precursor Solution ◽  
Fused Silica ◽  
Deposition Method ◽  
Chemical Solution ◽  
Tetragonal Tungsten Bronze ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

Crack-free and transparent Sr2KNb5O15 (SKN) thin films have been synthesized by the chemical solution deposition method. A homogeneous and stable precursor solution was prepared via controlling the reaction of metal alkoxides. SKN precursor was found to be the complex alkoxide between Sr[Nb(OEt)6]2 and KNb(OEt)6 with high structural symmetry. SKN powders and thin films on fused silica substrates directly crystallized to the polycrystalline tetragonal tungsten bronze phase at 600 °C. Highly oriented SKN thin films with the tetragonal tungsten bronze phase were fabricated on MgO(100) and Pt(100)/MgO(100) substrates. Two crystal lattice planes of SKN were intergrown at an orientation of 18.5° on MgO(100). The dielectric constant of SKN thin films on Pt(100)/MgO(100) was about 590 at 20 °C at 1 kHz.

Textured ZnO Thin Films on (0001) Sapphire Produced by Chemical Solution Deposition

2002 ◽  
Vol 17 (7) ◽  
pp. 1644-1650 ◽  
Author(s):  
B. Wessler ◽  
F. F. Lange ◽  
W. Mader
Keyword(s):  
Basal Plane ◽  
Chemical Solution Deposition ◽  
Zinc Acetate Dihydrate ◽  
Precursor Solution ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Oriented Growth ◽  
Solution Deposition ◽  
Transmission Electron ◽  
Out Of Plane

Highly textured zinc oxide films were produced on basal plane sapphire substrates by chemical solution deposition. Films with oriented growth were achieved by spin coating a 0.75 M precursor solution of zinc acetate dihydrate and ethanolamine in 2-methoxyethanol, heated at 300 °C/10 min, then at 500 °C/5 h, and finally at 850 °C/12 h. Films were characterized with x-ray diffraction (XRD) and scanning and transmission electron microscopy. The films exhibited only the (0002) ZnO line in XRD diagrams, proving a very well-developed out-of-plane texture. At temperatures above 700 °C the ZnAl2O4 spinel was observed, which formed as a reaction layer between sapphire and ZnO. Few specimens produced both in-plane and out-of-plane oriented growth of ZnO on basal plane sapphire. It was hypothesized that the substrate miscut, uncontrolled for the current experiments, could be the cause of the infrequent growth of epitaxial films.

Ferroelectric and Displacement Properties of Lead Zirconate Titanate Thick Films Prepared by Chemical Solution Deposition Process

2001 ◽  
Vol 688 ◽  
Author(s):  
Takashi Iijima ◽  
Yoshinori Hayashi ◽  
Jun Onagawa
Keyword(s):  
Lead Zirconate Titanate ◽  
Chemical Solution Deposition ◽  
Thick Films ◽  
Precursor Solution ◽  
Deposition Process ◽  
Dissipation Factor ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Contact Mode ◽  
Solution Deposition

AbstractCrack free 10-μm-thick Pb1.1(Zr0.53Ti0.47)O3 (PZT) films were successfully fabricated using a chemical solution deposition process, and the ferroelectric and displacement properties were evaluated. A 0.5 M PZT precursor solution was prepared from trihydrated lead acetate, titanium iso-propoxide, zirconium n-propoxide, and 2-methoxyethanol as the solvent. The process of spin coating and pyrolysis at 500 °C was repeated five times, and then the precursor films were fired at 700 °C for 5 min. This sequence was repeated 30 times. Finally, the films were fired at 700 °C for 10 min. The fabricated crack-free PZT thick films showed (100) preferred orientation. A flat surface and dense microstructure was observed. The electrical properties were comparable with the bulk PZT ceramics. The dielectric constant and dissipation factor were εr = 1453 and tan δ = 0.039, and the remnant polarization and coercive field were Pr = 25 μC/cm2 and Ec = 30 kV/cm, respectively. Field-induced displacement of the films was measured using an atomic force microscope (AFM) with and without a top electrode using a contact mode.

Crystallization Behavior of KNbO3 Series Precursors Synthesized by CSD Process

2006 ◽  
Vol 320 ◽  
pp. 85-88 ◽  
Author(s):  
Kiyotaka Tanaka ◽  
Kenichi Kakimoto ◽  
Hitoshi Ohsato
Keyword(s):  
Thermal Analysis ◽  
Differential Thermal Analysis ◽  
Chemical Solution Deposition ◽  
Crystallization Behavior ◽  
Piezoelectric Materials ◽  
Lead Free ◽  
Metal Alkoxides ◽  
Chemical Solution ◽  
Environmental Preservation ◽  
Solution Deposition

The development of lead-free piezoelectric materials has been required from the viewpoint of environmental preservation. We focused the lead-free KNbO3-based systems, and used a chemical solution deposition (CSD) process to obtain their precursor. (Na1-xKx)NbO3 precursor solutions were prepared from metal alkoxides and solvents such as absolute ethanol and 2-methoxyethanol. Crystallization behavior of the precursor gels obtained from the above solutions was investigated by the thermogravimetry differential thermal analysis (TG-DTA) measurement.

Mössbauer Spectra of 57Fe-Enriched BiFeO3 Thin Films Fabricated on SiO2/Si Substrates by Chemical Solution Deposition Process

2013 ◽  
Vol 582 ◽  
pp. 63-66 ◽  
Author(s):  
Kiyotaka Tanaka ◽  
Yoshinori Tsukamoto ◽  
Soichiro Okamura ◽  
Yutaka Yoshida
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Perovskite Phase ◽  
Precursor Solution ◽  
Deposition Process ◽  
Molar Ratio ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Mixture Phase

sup>57Fe-enriched BiFeO3 (BFO) thin films were fabricated on SiO2/Si substrates from a stoichiometric precursor solution by chemical solution deposition process. The Bi/Fe molar ratio of the thin films decreased from 0.95 to 0.80 with increase in the sintering temperature. A perovskite phase and flat surface were obtained in the BFO thin films sintered at 500 and 600 °C. However, the 57Fe Mössbauer spectra showed a mixture phase due to amorphous and/or Bi2Fe4O9 phases in the BFO thin films. The valence state of Fe ions of the BFO thin films was confirmed to be only Fe3+ by the Mössbauer spectra.

CONVENIENT PREPARATION OF Pb(ZrxTi1-x)O3 THIN FILMS BY A COMBINATORIAL SYNTHESIS PROCESS

2011 ◽  
Vol 04 (03) ◽  
pp. 231-235 ◽  
Author(s):  
CHAO PENG ◽  
DESEN ZHAO ◽  
GANG HE ◽  
MINGZHONG HE ◽  
JIANHE HONG ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Precursor Solution ◽  
Deposition Process ◽  
Combinatorial Synthesis ◽  
Synthesis Process ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Exothermic Reactions ◽  
Convenient Preparation

In order to carry out a convenient preparation of Pb ( Zr x Ti 1-x) O 3 thin films by combinatorial chemical solution deposition process, two kinds of Pb ( Zr x Ti 1-x) O 3 precursor solutions ( PbTiO3 precursor solution and PbZrO3 precursor solution) were prepared by a simple process. There is no distillation and no inert gas shielding in the process, and the precursors are more stable than the conventional precursor solution. A series of Pb ( Zr x Ti 1-x) O 3 samples (x = 0.1–0.9, in step of 0.1 amount change) were prepared using the two precursor solutions. The process was fast and saved time. There were strong exothermic reactions for the samples with the Zr content x in a short range from x = 0.23 to 0.27 at 161–200°C. The Pb ( Zr x Ti 1-x) O 3 thin films showed perovskite structure with strong (111)-preferred orientation. The structure and ferroelectric property of the PZT thin films are comparable with those of the PZT fabricated by conventional process.

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