Synthesis and properties of BxCyNz coatings

2001 ◽  
Vol 16 (3) ◽  
pp. 734-743 ◽  
Author(s):  
M. N. Oliveira ◽  
O. Conde
Keyword(s):  
Chemical Composition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Depth Sensing ◽  
Composition Triangle ◽  
Structure And Morphology ◽  
Fused Quartz ◽  
Composition Structure ◽  
Quartz Substrates

Some of the most interesting compounds from both technological and a scientific viewpoint can be found within the B–C–N composition triangle. Despite all the attention that some phases on the vertices and sides of the triangle have attracted, few works have focused inside the triangle itself. A laser-assisted chemical vapor deposition system was used to deposit B–C–N phases over fused quartz substrates. Two sets of gaseous precursors were used, namely B2H6 + NH3 + C2H4 and B2H6 + (CH3)2NH. The coatings were characterized regarding chemical composition, structure, and morphology. Hardness measurements were also carried out with a depth-sensing indentation instrument. It was found that depending on the gas phase, different regions of the BCN solid composition triangle are accessed. Coatings ranging from pure h-BN to pure B4C were obtained, as well as mixtures of these with BxCyNz compounds.

scholarly journals Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition

2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

scholarly journals Gas-phase aluminium acetylacetonate decomposition: Revision of the current mechanism by VUV synchrotron radiation

2021 ◽  
Author(s):  
Sebastian Grimm ◽  
Seung-Jin Baik ◽  
Patrick Hemberger ◽  
Andras Bodi ◽  
Andreas Kempf ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Phase Decomposition ◽  
Common Precursor ◽  
Current Mechanism

Although aluminium acetylacetonate, Al(C5H7O2)3, is a common precursor for chemical vapor deposition (CVD) of aluminium oxide, its gas phase decomposition is not very well investigated. Here, we studied its thermal...

On the carbo-thermal reduction of silica for carbon nano-fibre formation via CVD

2011 ◽  
Vol 1284 ◽  
Author(s):  
Alicja Bachmatiuk ◽  
Felix Börrnert ◽  
Imad Ibrahim ◽  
Bernd Büchner ◽  
Mark H. Rümmeli
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbothermal Reduction ◽  
Carbon Nanostructures ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thermal Reduction ◽  
Fibre Formation ◽  
Quartz Substrates

ABSTRACTThe formation of carbon nanostructures using silica nanoparticles from quartz substrates as a catalyst in an aerosol assisted chemical vapor deposition process was examined. The silica particles are reduced to silicon carbide via a carbothermal reduction process. The recyclability of the explored quartz substrates is also presented. The addition of triethyl borate improves the efficiency of the carbothermal reduction process and carbon nanotubes formation. Moreover, the addition of hydrogen during the chemical vapor deposition leads to the helical carbon nanostructures formation.

Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

1999 ◽  
Vol 61-62 ◽  
pp. 176-178 ◽  
Author(s):  
A.N Vorob’ev ◽  
A.E Komissarov ◽  
A.S Segal ◽  
Yu.N Makarov ◽  
S.Yu Karpov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Modeling Analysis ◽  
Phase Nucleation

scholarly journals Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

2018 ◽  
Author(s):  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
Polla Rouf ◽  
Sean Barry ◽  
Lars Ojamäe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Chemistry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Group 13 ◽  
Gas Phase Chemistry ◽  
Device Applications ◽  
Phase Chemistry

Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AlN, GaN, InN and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns use ammonia as the nitrogen precursor, however, this gives an inefficient CVD chemistry forcing N/13 ratios of 100/1 or more. Here we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations shows that while the methylamines have a more reactive gas phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, instead micrometer sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to consider than the gas phase chemistry when searching for better nitrogen precursors for 13-N CVD.

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