Densification and grain growth of Al-doped ZnO

2001 ◽  
Vol 16 (2) ◽  
pp. 459-468 ◽  
Author(s):  
Jiaping Han ◽  
P. Q. Mantas ◽  
A. M. R. Senos

The densification and grain growth of ZnO doped with Al from 0.08 to 1.2 mol% were investigated during isothermal sintering between 1100 and 1400 °C. The Al dopant significantly inhibited the grain growth of ZnO and increased the grain growth exponent from 3 for pure ZnO to 4–6 for Al-doped ZnO. The grain growth activation energy was also changed from approximately 200 kJ/mol for pure ZnO to approximately 480 kJ/mol for Al-doped ZnO. The results of x-ray diffraction, scanning electron microscopy, and transmission electron microscopy showed that a ZnAl2O4 spinel phase existed as a second phase at the ZnO grain boundaries in Al-doped ZnO specimens. The spinel particles exerted an effective drag (pinning) on the migration of ZnO grain boundaries. The analyses of the Al doping effect on the densification rate provided evidence that the driving force for densification was reduced by the second-phase particles. A mechanism of pore surface drag (pinning) on densification equivalent to the observed drag (pinning) of grain boundaries on grain growth was proposed.

2015 ◽  
Vol 33 (2) ◽  
pp. 220-229 ◽  
Author(s):  
Berat Yuksel ◽  
T. Osman Ozkan

AbstractGrain growth kinetics in 0.1 to 2 mol % B2O3-added ZnO ceramics was studied by using a simplified phenomenological grain growth kinetics equation Gn = K0 · t · exp(-Q/RT) together with the physical properties of sintered samples. The samples, prepared by conventional ceramics processing techniques, were sintered at temperatures between 1050 to 1250 °C for 1, 2, 3, 5 and 10 hours in air. The kinetic grain growth exponent value (n) and the activation energy for the grain growth of the 0.1 mol % B2O3-doped ZnO ceramics were found to be 2.8 and 332 kJ/mol, respectively. By increasing B2O3 content to 1 mol %, the grain growth exponent value (n) and the activation energy decreased to 2 and 238 kJ/mol, respectively. The XRD study revealed the presence of a second phase, Zn3B2O6 formed when the B2O3 content was > 1 mol %. The formation of Zn3B2O6 phase gave rise to an increase of the grain growth kinetic exponent and the grain growth activation energy. The kinetic grain growth exponent value (n) and the activation energy for the grain growth of the 2 mol % B2O3-doped ZnO ceramics were found to be 3 and 307 kJ/mol, respectively. This can be attributed to the second particle drag (pinning) mechanism in the liquid phase sintering.


2014 ◽  
Vol 616 ◽  
pp. 8-13
Author(s):  
Koji Matsui ◽  
Hidehiro Yoshida ◽  
Yuichi Ikuhara

We systematically investigated the phase transformation and grain-growth behaviors during sintering in 2 and 3 mol% Y2O3-stabilized tetragonal ZrO2 (2Y and 3Y) and 8 mol% Y2O3-stabilized cubic ZrO2 polycrystals (8Y). In particular, grain-boundary segregation and grain-interior distribution of Y3+ ions were examined by high-resolution transmission electron microscopy (HRTEM)- and scanning transmission electron microscopy (STEM)-nanoprobe X-ray energy dispersive spectroscopy (EDS) techniques. Above 1200°C, grain growth during sintering in 8Y was much faster than that in 2Y and 3Y. In the grain boundaries in these specimens, amorphous layers did not present; however, Y3+ ions segregated at the grain boundaries over a width of about 10 nm. The amount of segregated Y3+ ions in 8Y was significantly less than in 2Y and 3Y. This indicates that the amount of segregated Y3+ ions is related to grain growth behavior; i.e., an increase in segregated Y3+ ions retards grain growth. Therefore, grain-growth behavior during sintering can be reasonably explained by the solute-drag mechanism of Y3+ ions segregating along the grain boundary. In 2Y and 3Y, the cubic-phase regions were formed in grain interiors adjacent to the grain boundaries and/or the multiple junctions in which Y3+ ions segregated, which can be explained by a grain boundary segregation-induced phase transformation (GBSIPT) mechanism.


Author(s):  
B. B. Rath ◽  
J. E. O'Neal ◽  
R. J. Lederich

Addition of small amounts of erbium has a profound effect on recrystallization and grain growth in titanium. Erbium, because of its negligible solubility in titanium, precipitates in the titanium matrix as a finely dispersed second phase. The presence of this phase, depending on its average size, distribution, and volume fraction in titanium, strongly inhibits the migration of grain boundaries during recrystallization and grain growth, and thus produces ultimate grains of sub-micrometer dimensions. A systematic investigation has been conducted to study the isothermal grain growth in electrolytically pure titanium and titanium-erbium alloys (Er concentration ranging from 0-0.3 at.%) over the temperature range of 450 to 850°C by electron microscopy.


2013 ◽  
Vol 747-748 ◽  
pp. 844-849 ◽  
Author(s):  
Yue Fei ◽  
Xin Nan Wang ◽  
Zhi Shou Zhu ◽  
Jun Li ◽  
Guo Qiang Shang ◽  
...  

Ti-Mo-Nb-Cr-Al-Fe-Si alloy is a new metastable β titanium alloy with excellent combination of strength and ductility. The β grain-growth exponent and the activation energies for β grain growth for the investigated alloy at specified temperature were computed by the kinetic equations and the Arrhenius-type equation. The rate of β grain growth decreases with elongating solution treated time and increases with the increasing solution-treated temperature. The β grain-growth exponents, n, are 0.461, 0.464 and 0.469 at 1113, 1133 and 1153K, respectively. The β grain growth activation energy is determined to be 274 KJ/mol.


1998 ◽  
Vol 526 ◽  
Author(s):  
R. Kalyanaraman ◽  
S. Oktyabrsky ◽  
K. Jagannadham ◽  
J. Narayan

AbstractThe atomic structure of grain boundaries in pulsed laser deposited YBCO/MgO thin films have been studied using transmission electron microscopy. The films have perfect texturing with YBCO(001)//MgO(001), giving rise to low-angle [001] tilt boundaries from the grains with the c-axis normal to substrate surface. Low angle grain boundaries have been found to be aligned preferentially along (100) and (110) interface planes. The energy of (110) boundary planes described by an alternating array of [100] and [010] dislocation is found to be comparable to the energy of a (100) boundary. The existence of these split dislocations is shown to further reduce the theoretical current densities of these boundaries indicating that (110) boundaries carry less current as compared to (100) boundaries of the same misorientation angle. Further, Z-contrast transmission electron microscopy of a 42° asymmetric high-angle grain boundary of YBCO shows evidence for the existence of boundary fragments and a reduced atomic density along the boundary plane


Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.


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