Interface structure of face-centered-cubic-Ti thin film grown on 6H–SiC substrate

2000 ◽  
Vol 15 (10) ◽  
pp. 2121-2124 ◽  
Author(s):  
Y. Sugawara ◽  
N. Shibata ◽  
S. Hara ◽  
Y. Ikuhara
Keyword(s):  
Thin Film ◽  
Orientation Relationship ◽  
High Resolution Electron Microscopy ◽  
Electron Beam Evaporation ◽  
Face Centered Cubic ◽  
High Adhesion ◽  
Resolution Electron ◽  
Face Centered ◽  
Relationship Of ◽  
High Degree

A titanium thin film was deposited on the flat (0001) face of a 6H–SiC by electron beam evaporation at room temperature in a vacuum of 5.1 × 10−8 Pa. The Ti film was epitaxially grown on the surface, and the interface between Ti and SiC was characterized by high-resolution electron microscopy. It was found that the structure of the deposited titanium is face-centered cubic (fcc), although bulk titanium metal usually has a hexagonal close-packed or body-centered cubic crystal structure. We believe that the unusual fcc structure of Ti thin film is due to the high adhesion of the film to the substrate and the high degree of coherency between them. The orientation relationship of the fcc-Ti/6H–SiC interface was (111)fcc-Ti//(0001)6H–SiC and [110]fcc-Ti//[1120]6H−SiC. Preliminary calculations indicate that this orientation relationship maximizes the lattice coherency across the interface.

Selected Values for the Stacking Fault Energy of Face Centered Cubic Metals

2008 ◽  
Vol 591-593 ◽  
pp. 708-711 ◽  
Author(s):  
Marcos Flavio de Campos
Keyword(s):  
High Resolution Electron Microscopy ◽  
Accurate Method ◽  
Stacking Fault ◽  
Metals And Alloys ◽  
Stacking Fault Energy ◽  
Face Centered Cubic ◽  
Resolution Electron ◽  
Plastic Deformation Behavior ◽  
Face Centered ◽  
The 1960S

The Stacking fault energy (SFE) is an important parameter for metals and alloys. The plastic deformation behavior of face centered cubic (FCC) metals and alloys is directly related to the SFE values. The several methods for determining SFE are critically discussed. The values reported in the 1960s and early 1970s are, in general, 20-30% overestimated. The node dislocation method, due to Whelan, overestimates the SFE. The method based on the critical resolved shear stress is not reliable. The most accurate method is the direct observation of dissociated partials by weak beam in TEM or using HREM (High resolution electron microscopy). Indirect methods based in X-Ray Diffraction and texture may provide reasonable estimates since reliable SFE values of reference metals are available. Selected SFE values for Ni, Cu, Ag, Cu and Al are presented.

Formation of face-centered cubic titanium on a Ni single crystal and in Ni/Ti multilayers

1994 ◽  
Vol 9 (1) ◽  
pp. 31-38 ◽  
Author(s):  
Alan F. Jankowski ◽  
Mark A. Wall
Keyword(s):  
Structural Characteristics ◽  
Single Layer ◽  
High Resolution Electron Microscopy ◽  
Cubic Phase ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resolution Electron ◽  
The Face ◽  
Face Centered

The artificial layering of metals can change both physical and structural characteristics from the bulk. The stabilization of polymorphic metallic phases can occur on a dimensional scale that ranges from single overgrowth layers to repetitive layering at the nanoscale. The sputter deposition of crystalline titanium on nickel, as both a single layer and in multilayer form, has produced a face-centered cubic phase of titanium. The atomic structure of the face-centered cubic titanium phase is examined using high resolution electron microscopy in combination with electron and x-ray diffraction.

Microstructure and Homogeneity of Nanocrystalline Co–Cu Supersaturated Solid Solutions Prepared by Mechanical Alloying

1997 ◽  
Vol 12 (4) ◽  
pp. 936-946 ◽  
Author(s):  
J. Y. Huang ◽  
Y. D. Yu ◽  
Y. K. Wu ◽  
D. X. Li ◽  
H. Q. Ye
Keyword(s):  
Electron Microscopy ◽  
Mechanical Alloying ◽  
Solid Solutions ◽  
High Resolution Electron Microscopy ◽  
Face Centered Cubic ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Supersaturated Solid Solutions ◽  
Face Centered ◽  
Fcc Phase

Mechanical alloying (MA) has been performed in the CoxCu(100-x) (x = 10, 25, 50, 60, 75, and 90) system. High resolution electron microscopy (HREM) and field emission gun transmission electron microscopy (FEG TEM) were used to characterize the microstructure and homogeneity of the nanocrystalline Co25Cu75 solid solution. After 20 h of MA, all the mixtures show an entirely face-centered cubic (fcc) phase. HREM shows that the ultrafine-grained (UFG) materials prepared by MA contain a high density of defects. Two kinds of typical defects in UFG Co25Cu75 are deformation twins and dislocations. The dislocations are mostly 60° type, and in many cases they dissociate into 30° and 90° partials. The grain boundaries are ordered in structure, curved, and slightly strained, which is similar to that observed in NC–Pd. Nanoscale energy dispersive x-ray spectroscopy (EDXS) shows that the Co concentration in both the interior of grains and the GB's is close to the global composition, which proves that supersaturated solid solutions are indeed formed. In the meantime EDXS revealed that the mixing of Co and Cu in the solid solutions is homogeneous at nanometer scale. MA in the Co–Cu system is suggested to be a diffusion-controlled process, and stress-stimulated diffusion is proposed to be the reason for the formation of supersaturated solid solutions in this immiscible system.

Electron diffraction detection of ordliking in annealed PbTe thin film

1990 ◽  
Vol 48 (4) ◽  
pp. 1018-1019
Author(s):  
Karimat El-Sayed
Keyword(s):  
Thin Film ◽  
Electron Diffraction ◽  
Lead Telluride ◽  
Structural Basis ◽  
Face Centered Cubic ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Stage Process ◽  
Diffraction Patterns ◽  
Face Centered

Lead telluride is an important semiconductor of many applications. Many Investigators showed that there are anamolous descripancies in most of the electrophysical properties of PbTe polycrystalline thin films on annealing. X-Ray and electron diffraction studies are being undertaken in the present work in order to explain the cause of this anamolous behaviour.Figures 1-3 show the electron diffraction of the unheated, heated in air at 100°C and heated in air at 250°C respectively of a 300°A polycrystalline PbTe thin film. It can be seen that Fig. 1 is a typical [100] projection of a face centered cubic with unmixed (hkl) indices. Fig. 2 shows the appearance of faint superlattice reflections having mixed (hkl) indices. Fig. 3 shows the disappearance of thf superlattice reflections and the appearance of polycrystalline PbO phase superimposed on the [l00] PbTe diffraction patterns. The mechanism of this three stage process can be explained on structural basis as follows :

Electrodeposition of CuI Thin Film for Perovskite Solar Cells

2020 ◽  
Vol 979 ◽  
pp. 180-184
Author(s):  
I. Karuppusamy ◽  
K. Ramachandran ◽  
S. Karuppuchamy
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Applied Voltage ◽  
Perovskite Solar Cells ◽  
Face Centered Cubic ◽  
Applied Potential ◽  
Cathodic Electrodeposition ◽  
Cubic Structure ◽  
Face Centered

The CuI thin film has been successfully prepared by using cathodic electrodeposition method. The synthesized film was characterized using advanced techniques such as XRD, SEM-EDX and UV measurements. The films are crystallized in face centered cubic structure. The crystallinity is increasing for the applied potential of-0.3 V and the crystallinity deteriorates on increasing the potential above - 0.3 V. It was also observed that the applied voltage plays an important role. Homogeneously distributed triangular faceted morphology was observed from SEM. This is consistent with the result of XRD that electrodeposited CuI thin films grow preferential orientation along the (111) crystal plane.

Effect of Annealing Conditions on Microstructure Evolution of NiMnFeGa Shape Memory Thin Film

2010 ◽  
Vol 150-151 ◽  
pp. 1745-1749
Author(s):  
Hai Bo Wang ◽  
Li Ma ◽  
Wei Cai
Keyword(s):  
Thin Film ◽  
Shape Memory ◽  
Microstructure Evolution ◽  
Face Centered Cubic ◽  
Free Standing ◽  
Annealing Conditions ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Face Centered ◽  
Ferromagnetic Shape Memory

The microstructure evolution of sputtered polycrystalline Ni54.75Mn13.25Fe7Ga25 ferromagnetic shape memory thin film annealed under different conditions is studied. Microstructure of different annealed films was studied using Transmission Electron Microscope (TEM) and corresponding selected area electron diffraction (SAED) patterns. The result shows that in the microstructure of as-deposited Ni54.75Mn13.25Fe7Ga25 free-standing film, after annealed at 1073 K for different time, the crystalline grain grows up with the increase of the annealing time. By analysis of the SAED patterns, the structure of the thin films change from face-centered cubic austenite to orthorhombic structure martensite compared between the film annealed at 1073 K for 10 mins, 1hr, 4 hrs, and 24 hrs respectively. It indicated that the heat treatment is an effective method of crystallizing behavior for the thin film.

Crystal Structure of and Defects in the Pentacene Thin Film Phase

2002 ◽  
Vol 734 ◽  
Author(s):  
Lawrence F. Drummy ◽  
Paul K. Miska ◽  
David C. Martin
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Resolution Electron Microscopy ◽  
Orthorhombic Symmetry ◽  
Extended Defects ◽  
X Ray Diffraction ◽  
Voltage Electron ◽  
Resolution Electron

The aromatic hydrocarbon pentacene is currently under investigation for use as the active layer in electronic devices such as thin film field effect transistors. We have used X-Ray Diffraction (XRD), Electron Diffraction (ED), Low Voltage Electron Microscopy (LVEM), High Resolution Electron Microscopy (HREM) and molecular modeling to investigate the thin film phase of pentacene. We will report the orthorhombic symmetry and lattice parameters of the thin film phase measured experimentally from these techniques. The structure of extended defects such as dislocations and grain boundaries will influence the electrical and mechanical characteristics of the films. Here we show a direct image of an edge dislocation in the thin film phase and discuss the way in which the lattice accommodates the defect.

Atomic Scale Study of Cosi/Si (111) and CoSi2/Si (111) Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
A. Catana ◽  
M. Heintze ◽  
P.E. Schmid ◽  
P. Stadelmann
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Orientation Relationship ◽  
Cross Sections ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Initial Stage ◽  
Resolution Electron

ABSTRACTHigh Resolution Electron Microscopy (HREM) was used to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. CoSi is found to grow epitaxially on Si with [111]Si // [111]CoSi and < 110 >Si // < 112 >CoSi. Two CoSi non-equivalent orientations (rotated by 180° around the substrate normal) can occur in this plane. They can be clearly distinguished by HRTEM on cross-sections ( electron beam along [110]Si). At about 500°C CoSi transforms to CoSi2. Experimental results show that the type B orientation relationship satisfying [110]Si // [112]CoSi is preserved after the initial stage of CoSi2 formation. At this stage an epitaxial CoSi/CoSi2/Si(111) system is obtained. The atomic scale investigation of the CoSi2/Si interface shows that a 7-fold coordination of the cobalt atoms is observed in both type A and type B epitaxies.

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