Preparation and characterization of Nd3+ and Er3+-doped silica sol-gel coatings by Rutherford backscattering spectroscopy and spectroscopic ellipsometry

1997 ◽  
Vol 12 (10) ◽  
pp. 2779-2783 ◽  
Author(s):  
S. Bruynooghe ◽  
A. Chabli ◽  
F. Bertin ◽  
F. Pierre ◽  
G. Leflem
Keyword(s):  
Rare Earth ◽  
Spectroscopic Ellipsometry ◽  
Sol Gel ◽  
Single Crystal Silicon ◽  
Liquid Solution ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Rare Earth Doping ◽  
Crystal Silicon ◽  
Silica Films

Neodymium- or erbium-doped silica films are deposited on single crystal silicon substrates using a sol-gel process and a spin-coating technique. These glasses are doped with neodymium or erbium in various Nd/Si or Er/Si atomic ratios up to 8% using neodymium nitrate or erbium nitrate as precursor. A preparation method of such films is described. Film rare earth concentration measured by Rutherford Backscattering Spectroscopy (RBS) is the same as in the initial liquid solution. Film thickness and refractive index are obtained by variable angle spectroscopic ellipsometry. We have shown that both RBS analysis and spectroscopic ellipsometry are powerful tools to control rare earth doping level and optical properties of the silica films.

scholarly journals Влияние зарядового состояния ионов ксенона на профиль распределения по глубине при имплантации в кремний

2019 ◽  
Vol 53 (8) ◽  
pp. 1030
Author(s):  
Ю.В. Балакшин ◽  
А.В. Кожемяко ◽  
S. Petrovic ◽  
M. Erich ◽  
А.А. Шемухин ◽  
...  
Keyword(s):  
Single Crystal Silicon ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Multiply Charged Ions ◽  
Crystal Silicon ◽  
Multiply Charged ◽  
Irradiation Energy ◽  
Singly Charged ◽  
Channeling Effect ◽  
Charged Ions

AbstractExperimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (10^14–10^15) ion/cm^2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.

Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
J. O. Olowolafe ◽  
R. Fastow
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Reaction Rates ◽  
Rutherford Backscattering ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Crystal Silicon ◽  
Transmission Electron

ABSTRACTThin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.

Design and Synthesis of Metal-Organic Precursors to Aluminosilicates

1984 ◽  
Vol 32 ◽  
Author(s):  
Arlene G. Williams ◽  
Leonard V. Interrante
Keyword(s):  
Sol Gel ◽  
Single Crystal Silicon ◽  
Direct Conversion ◽  
Thermal Curing ◽  
Crystal Silicon ◽  
Design And Synthesis ◽  
Metal Organic ◽  
Ceramic Precursors ◽  
Organic Precursors ◽  
Viscous Solutions

ABSTRACTDiketonate aluminum alkoxides were prepared and allowed to react with acetoxyalkylsilanes. The conversion of the aluminosiloxanes thus obtained to aluminosilicates at 450°C was demonstrated. These aluminosiloxane ceramic precursors are glassy, oligomeric materials which readily dissolve in organic solvents to give viscous solutions ideal for casting films. Films of the metal-organic compounds prepared in this manner yield monolithic, crack-free aluminosilicate films directly on thermal curing, with a thickness limit of 3000Å for single crystal silicon wafer substrates. These aluminosilicate films have been found to be effective anticorrosion barriers for various metal substrates. The chemistry of this organoaluminosilane system and the nature of the aluminosilicate films obtained has been investigated using a variety of chemical and physical methods. The results of this investigation will be described and the possible advantages of this direct conversion process over the sol-gel method as a means of obtaining aluminosilicate films will be discussed.

Effect of rare earth doping on sol-gel derived PZT thin films

2001 ◽  
Vol 28 (3-4) ◽  
pp. 85-92 ◽  
Author(s):  
S. B. MAJUMDER ◽  
P. S. DOBAL ◽  
B. ROY ◽  
S. BHASKAR ◽  
R. S. KATIYAR ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Sol Gel ◽  
Rare Earth Doping ◽  
Pzt Thin Films

Sol-gel processing of strontium-barium niobate ferroelectric thin film

1990 ◽  
Vol 5 (5) ◽  
pp. 916-918 ◽  
Author(s):  
Ren Xu ◽  
Yuhuan Xu ◽  
Ching Jih Chen ◽  
John D. Mackenzie
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Single Crystal Silicon ◽  
Ferroelectric Thin Film ◽  
Processing Temperature ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Crystal Silicon ◽  
Glass Slides ◽  
Gel Processing

Ferroelectric thin film of strontium-barium niobate was successfully fabricated by the sol-gel technique. The films were made on several types of substrate, including quartz, single crystal silicon wafer, and glass slides. The processing temperature was as low as 700 °C. The film obtained with thickness of 3000 Å was dense, transparent, and showed excellent ferroelectricity.

Study of Biological Properties of Thin-Film Materials on the Basis of the SIO2–P2O5–СaO System

2016 ◽  
Vol 683 ◽  
pp. 427-432 ◽  
Author(s):  
Lyudmila P. Borilo ◽  
Ekaterina S. Lyutova ◽  
Larisa N. Spivakova
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Single Crystal Silicon ◽  
Film Coating ◽  
Biological Properties ◽  
Oxide System ◽  
Crystal Silicon ◽  
Practical Applications ◽  
Film Forming ◽  
The Moment

Thin films were obtained from film-forming solutions by the sol-gel method on the basis of the SiO2-P2O5-СаO system. Thin films were produced on the single-crystal silicon substrates (model substrate) by extraction at a velocity of 5 mm/s following by heat treatment at a temperature of 60°С for 20 minutes and at a temperature of 600°С for 1 hour. During the experiment it was established that film-forming solutions are usable only for 2 to 7 days from the moment of preparation. Using thermal and infra-red – spectroscopic analysis main stages of oxide system formation were retraced. According to data from x-ray phase analysis phases CaClH2PO4∙H2O, Ca(H2PO4)2∙H2O, CaHPO4∙2H2O, Ca2SiO4∙H2O, Ca5(PO4)3Cl. On the supporter’s surface a homogeneous film coating with quite equally spaced crystal-like formations with the diameter of 10-11 microns at the distance of 1-30 microns was formed. Phase composition, surface properties and biological activity of the synthesized materials were investigated. XRD results indicated that after being immersed into the SBF, hydroxylapatite, wollastonite, and chlorapatite were formed on the samples’ surfaces, which was important for practical applications

Sign in / Sign up

Export Citation Format

Share Document