Improved Subthreshold Swing and Gate-Bias Stressing Stability of p-Type $\hbox{Cu}_{2}\hbox{O}$ Thin-Film Transistors Using a $\hbox{HfO}_{2}$ High-$k$ Gate Dielectric Grown on a $\hbox{SiO}_{2}/\hbox{Si}$ Substrate by Pulsed Laser Ablation

2011 ◽  
Vol 58 (7) ◽  
pp. 2003-2007 ◽  
Author(s):  
Xiao Zou ◽  
Guojia Fang ◽  
Jiawei Wan ◽  
Xun He ◽  
Haoning Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Gate Bias ◽  
Si Substrate ◽  
High K ◽  
P Type

Improved gate bias stressing stability of IGZO thin film transistors using high-k compounded ZrO2/HfO2 nanolaminate as gate dielectric

2018 ◽  
Vol 676 (1) ◽  
pp. 65-71 ◽  
Author(s):  
Jun Yang ◽  
Xiang Yang ◽  
Yongpeng Zhang ◽  
Bowen Che ◽  
Xingwei Ding ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Gate Bias ◽  
High K

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

TEM Study of the Effect of the Sapphire Substrate Surface Orientation on the Microstructure of Tin Dioxide Films

2001 ◽  
Vol 7 (S2) ◽  
pp. 1220-1221
Author(s):  
J. E. Dominguez ◽  
L. Fu ◽  
X. Q. Pan
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
High Performance ◽  
Tin Dioxide ◽  
Substrate Surface ◽  
Sensor Arrays ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Oxide Thin Film ◽  
Thin Film Sensors

Tin dioxide (SnO2) has been extensively studied and used as gas sensors to detect toxic gases such as CO, NOxand flammable gases like H2.[l] Recently, considerable researches have focused on thin film sensors due to their high performance as well as their integration compatibility with semiconductor technology for making microsensors and sensor arrays. [2] The performance of thin film sensors is remarkably influenced by the way they were fabricated.[3] Among various deposition techniques, pulsed laser deposition (PLD) has shown great prominence in the deposition of a wide variety of oxide thin film materials such as high Tc superconductors, semiconductors and dielectrics. in this work we present our experimental results on tin dioxide films deposited using pulsed laser ablation on sapphire (α -Al2O3) substrates with different surface orientations.Tin oxide films with a thickness of 100 nm were deposited on the (1012) and (0001) sapphire by pulsed laser ablation of ceramic SnO2 targets.

Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

2019 ◽  
Vol 28 (8) ◽  
pp. 088502
Author(s):  
Chao-Yang Han ◽  
Yuan Liu ◽  
Yu-Rong Liu ◽  
Ya-Yi Chen ◽  
Li Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Gate Bias ◽  
Stress Effects ◽  
Bias Stress ◽  
Noise Characteristics ◽  
P Type ◽  
Si Thin Film

Photoluminescence characteristics of ZnGa2O4−xMx:Mn2+ (M=S, Se) thin film phosphors grown by pulsed laser ablation

2005 ◽  
Vol 479 (1-2) ◽  
pp. 238-244 ◽  
Author(s):  
Jong Seong Bae ◽  
Kyoo Sung Shim ◽  
Byung Kee Moon ◽  
Byung Chun Choi ◽  
Jung Hyun Jeong ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation
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