scholarly journals Fe-family of superconductors: Influence of Ni dopant on the superconductivity in BaFe2As2 crystal and the relaxation volume- CORRIGENDUM

MRS Advances ◽  
2020 ◽  
Vol 5 (52-53) ◽  
pp. 2751-2751
Author(s):  
Jacques Soullard ◽  
Ilya G. Kaplan
Keyword(s):  
ACS Omega ◽  
2021 ◽  
Author(s):  
Ying Luo ◽  
Xiaohui Zhang ◽  
Cheng Huang ◽  
Xiaole Han ◽  
Qingqing Jiang ◽  
...  

2005 ◽  
Vol 403 (1-2) ◽  
pp. 368-375 ◽  
Author(s):  
Stjepko Krehula ◽  
Svetozar Musić ◽  
Stanko Popović
Keyword(s):  

2012 ◽  
Vol 26 (18) ◽  
pp. 1250114
Author(s):  
ZHI-WEI ZHAO ◽  
JING WANG ◽  
HUI-YAN ZHAO ◽  
YING LIU

The structural and magnetic properties of M Si 46 (M = Mn , Fe , Co and Ni ) clathrates have been studied using density functional theory calculations within the generalized gradient approximation. When the structures involve a dopant at the center of a Si 20 or Si 24 cage, the results show that the neighboring atoms around the dopant are drawn in toward the center. Some of the silicon clathrates with a Mn or Co dopant at the center site of a Si 20 cage, or a Mn , Fe or Ni dopant at the center site of a Si 24 cage are found to be half-metallic materials with large magnetic moments, and others with a Fe or Ni dopant at the center site of a Si 20 cage or a Co dopant at the center site of a Si 24 cage display semi-metallic characters. In particular, MnSi 46 with a half-metallic gap of 0.70 eV and a magnetic moment of 5.00 μ B shows promise for applications in the field of spintronics.


2013 ◽  
Vol 224 (11) ◽  
Author(s):  
Mălina Răileanu ◽  
Maria Crișan ◽  
Adelina Ianculescu ◽  
Dorel Crișan ◽  
Nicolae Drăgan ◽  
...  

1996 ◽  
Vol 8 (49) ◽  
pp. 10679-10685 ◽  
Author(s):  
A V Chadwick ◽  
S R Davis ◽  
J F de Lima ◽  
M E G Valerio ◽  
S L Baldochi
Keyword(s):  

1994 ◽  
Vol 49 (17) ◽  
pp. 12170-12175 ◽  
Author(s):  
S. A. Hoffman ◽  
M. A. Castro ◽  
G. C. Follis ◽  
S. M. Durbin

2018 ◽  
Vol 16 (1) ◽  
pp. 757-762 ◽  
Author(s):  
Fatma Göde ◽  
Serdar Ünlü

AbstractUndoped and nickel doped indium sulfide (In2S3:Ni) thin films have been deposited on indium tin oxide (ITO) coated glass substrates by successive ionic layer adsorption and reaction (SILAR) method. The doping concentration of Ni has been adjusted as 4%, 5% and 6% (in molar ratio of nickel ions to indium ions). The effects of Ni doping on the structural, morphological, compositional and optical properties of the In2S3 thin films are investigated. The x-ray diffraction patterns show that deposited film has cubic structure with amorphous nature of In2S3 and its crystallinity deteriorates with increasing doping concentration. The SEM measurements show that the surface morphology of the films is affected from the Ni incorporation. The direct band gap of the films decreases from 2.33 eV to 1.61 eV with increasing Ni dopant. Energy dispersive x-ray spectroscopy (EDS) has been used to evaluate the chemical composition and shown that S/(Ni+In) ratio in films decreases from 1.18 to 0.40 with Ni content. Optical properties of the films have been performed by a UV-Vis spectrophotometer. The direct band gap of the films decreases from 2.33 eV to 1.61 eV with increasing Ni dopant. Moreover, optical parameters of the films such as refractive index (𝑛), extinction coefficient (k), real (ε1) and imaginary (ε2) parts of dielectric constant have been determined by using absorbance and transmittance spectra. The investigations showed that the Ni doping has a significant effect on the physical properties of SILAR produced In2S3 thin films.


2010 ◽  
Vol 118 (2) ◽  
pp. 244-248 ◽  
Author(s):  
A. Malinowski ◽  
V.L. Bezusyy ◽  
R. Minikayev ◽  
W. Paszkowicz ◽  
P. Dziawa ◽  
...  

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