Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate

2009 ◽  
Vol 94 (22) ◽  
pp. 223506 ◽  
Author(s):  
Binh-Minh Nguyen ◽  
Darin Hoffman ◽  
Edward Kwei-wei Huang ◽  
Simeon Bogdanov ◽  
Pierre-Yves Delaunay ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Type Ii

Type-II superlattice photodetector on a compliant GaAs substrate

2000 ◽  
Vol 12 (6) ◽  
pp. 684-686 ◽  
Author(s):  
G.J. Brown ◽  
F. Szmulowicz ◽  
R. Linville ◽  
A. Saxler ◽  
K. Mahalingham ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Type Ii ◽  
Type Ii Superlattice

Uncooled MWIR InAs/GaSb type-II superlattice grown on a GaAs substrate

2013 ◽  
Author(s):  
M. J. Hobbs ◽  
F. Bastiman ◽  
C. H. Tan ◽  
J. P. R. David ◽  
S. Krishna ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Type Ii ◽  
Type Ii Superlattice

High performance Antimony-based Type-II superlattice photodiodes on GaAs substrate

2009 ◽  
Author(s):  
Binh-Minh Nguyen ◽  
Darin Hoffman ◽  
Edward K. Huang ◽  
Pierre-Yves Delaunay ◽  
Manijeh Razeghi
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
Type Ii ◽  
Type Ii Superlattice

Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate

2009 ◽  
Vol 95 (17) ◽  
pp. 173505 ◽  
Author(s):  
S. Abdollahi Pour ◽  
B-M. Nguyen ◽  
S. Bogdanov ◽  
E. K. Huang ◽  
M. Razeghi
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
Type Ii ◽  
Long Wavelength ◽  
Long Wavelength Infrared

scholarly journals GaAs-substrate-based long-wave active materials with type-II band alignments

2001 ◽  
Vol 19 (4) ◽  
pp. 1501 ◽  
Author(s):  
S. R. Johnson ◽  
S. Chaparro ◽  
J. Wang ◽  
N. Samal ◽  
Y. Cao ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Type Ii ◽  
Active Materials ◽  
Long Wave ◽  
Band Alignments

scholarly journals InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates

Proceedings ◽  
2019 ◽  
Vol 27 (1) ◽  
pp. 38
Author(s):  
Hackiewicz ◽  
Kopytko ◽  
Rutkowski ◽  
Martyniuk ◽  
Ciura
Keyword(s):  
Gaas Substrate ◽  
Room Temperature ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Type Ii ◽  
Electrical And Optical Properties ◽  
Mid Infrared ◽  
Type Ii Superlattice ◽  
Gaas Substrates ◽  
Optical Immersion

Electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers are investigated in this work. We compare the detection parameters of detectors grown on the native GaSb substrate and lattice-mismatched GaAs substrate and seek solutions to enhance device performance, specifically with using an optical immersion. The detectors grown on GaAs have better detection parameters at room temperature, but at lower temperatures the misfit dislocations become more important and detectors grown on GaSb become better.

Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate

2000 ◽  
Vol 76 (22) ◽  
pp. 3188-3190 ◽  
Author(s):  
Y. Chen ◽  
G. H. Li ◽  
Z. M. Zhu ◽  
H. X. Han ◽  
Z. P. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Gaas Substrate ◽  
Type Ii ◽  
Self Assembled ◽  
Photoluminescence Studies
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