scholarly journals The SiC Single Crystal Growth from Nanomaterial Precursor

MRS Advances ◽  
2019 ◽  
Vol 4 (50) ◽  
pp. 2709-2715
Author(s):  
Yoshimitsu Yamada
Keyword(s):  
Crystal Growth ◽  
Electric Field ◽  
Single Crystal ◽  
Particle Deposition ◽  
Three Dimensional ◽  
Layer Growth ◽  
Seed Crystal ◽  
Layer By Layer ◽  
Remarkable Effect ◽  
Dimensional Growth

ABSTRACTUnlike the conventional layer by layer growth ,three dimensional growth experiments of SiC single crystal by the Chemical Particle Deposition (CPD)method were carried out both on the polar and nonpolar plane of the SiC seed crystal. The comparison of the morphology of the grown crystals on both samples indicated that the electric field formed by the seed crystal strongly effected the diffusion of the supplied Si and C atoms and their compounds to grow the epitaxial crystal. In spite of the low ionicity of Si-C bonds, this remarkable effect of the electric field on the three dimensional crystal growth mechanism in the CPD method strongly suggested its contribution to the ordering of the stacked layers with its long working range, beyond the deformed boundary layers between the seed surface and the grown crystal.

Growth of High-Quality Pb(ZrxTi1-x)O3 Films by Peroxide MBE and Their Optical and Structural Characteristics

2006 ◽  
Vol 966 ◽  
Author(s):  
Natalia Izyumskaya ◽  
Vitaliy Avrutin ◽  
Xing Gu ◽  
Umit Ozgur ◽  
Bo Xiao ◽  
...  
Keyword(s):  
Structural Characteristics ◽  
Three Dimensional ◽  
High Energy ◽  
Layer Growth ◽  
In Situ Monitoring ◽  
Layer By Layer ◽  
Pzt Film ◽  
Pzt Films ◽  
Dimensional Growth

ABSTRACTThe growth of Pb(ZrxTi1-x)O3 (PZT) films by molecular beam epitaxy was demonstrated. Single-crystal, single-phase PZT films were grown on (001) SrTiO3 substrates at a growth temperature of 600°C. In situ monitoring of the growth process by reflection high-energy electron diffraction revealed two dimensional growth for the PZT constituent ternaries, namely, PbTiO3 and PbZrO3, and three-dimensional growth for PZT films of intermediate compositions. Layer-by-layer growth of PZT films, however, was achieved by using a PbTiO3 buffer layer between the SrTiO3 substrate and PZT films. Optical properties of the films of the end ternaries were investigated by spectroscopic ellipsometry. Refractive index at 633 nm was found to be 2.66 for PbTiO3 and 2.40 for PbZrO3. Band gap energies of PbTiO3 and PbZrO3 were determined as 3.81 and 3.86 eV, in good agreement with theoretically calculated values. The P-E hysteresis loop of a 70-nm-thick PZT film was well saturated and had a square shape. The remanent polarization and the coercive field were 83 μC/cm2 and 77 kV/cm, respectively, which are respectable.

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Remote Plasma ◽  
Dimensional Growth ◽  
Diffraction Patterns

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

Structural Defects and Their Relationship to Nucleation of Gan Thin Films

1996 ◽  
Vol 423 ◽  
Author(s):  
Weida Gian ◽  
Marek Skowronski ◽  
Greg S. Rohrer
Keyword(s):  
Film Growth ◽  
Three Dimensional ◽  
Scanning Force Microscopy ◽  
Columnar Structure ◽  
Layer Growth ◽  
Buffer Layers ◽  
Structural Defects ◽  
Layer By Layer ◽  
Extended Defects ◽  
Edge Dislocations

AbstractMicrostructure and extended defects in α-GaN films grown by organometallic vapor phase epitaxy on sapphire substrates using low temperature AIN (or GaN) buffer layers have been studied using transmission electron microscopy. The types and distribution of extended defects were correlated with the film growth mode and the layer nucleation mechanism which was characterized by scanning force microscopy. The nature of the extended defects was directly related to the initial three-dimensional growth. It was found that inhomogeneous nucleation leads to a grain-like structure in the buffer; the GaN films then have a columnar structure with a high density of straight edge dislocations at grain boundaries which are less likely to be suppressed by common annihilation mechanisms. Layer-by-layer growth proceeds in many individual islands which is evidenced by the observation of hexagonal growth hillocks. Each growth hillock has an open-core screw dislocation at its center which emits monolayer-height spiral steps.

Solid state single crystal growth of three-dimensional faceted LaFeAsO crystals

2018 ◽  
Vol 483 ◽  
pp. 9-15 ◽  
Author(s):  
Rhea Kappenberger ◽  
Saicharan Aswartham ◽  
Francesco Scaravaggi ◽  
Christian G.F. Blum ◽  
Mihai I. Sturza ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Solid State ◽  
Single Crystal ◽  
Three Dimensional ◽  
Single Crystal Growth

KDP single crystal growth via three-dimensional motion growth method

2016 ◽  
Vol 51 (8) ◽  
pp. 491-497 ◽  
Author(s):  
Huawei Yin ◽  
Mingwei Li ◽  
Chuan Zhou ◽  
Jie Song
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Three Dimensional ◽  
Single Crystal Growth ◽  
Growth Method

Effects of Stress on Step Energies and Surface Roughness

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 27-30 ◽  
Author(s):  
Christopher Roland
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Layer Growth ◽  
Growth Mode ◽  
Misfit Dislocations ◽  
Layer By Layer ◽  
Strained Layers ◽  
The Subject ◽  
Growth Changes

Strain relaxation in lattice-mismatched, heteroepitaxial systems is one of the classic problems in materials physics, which has gained new urgency with the increased applications of strained layers in microelectronic systems. In general both the structure and the integrity of the thin films are strongly influenced by strain. For instance it has long been known that under strain, the growth changes from an initial layer-by-layer growth mode to one with three-dimensional islanding. In the seminal works of van der Merwe, and Matthews and Blakeslee, this change in growth mode is explained in terms of the introduction of strain-relieving misfit dislocations, which appear when the film has reached some critical thickness. Recently it has become clear that this change in growth mode can take place even without the introduction of misfit dislocations. Such dislocation-free coherent islanding, or “roughening,” has been observed experimentally both in Ge/Si and in InGaAs/GaAs systems. Furthermore recent experiments show that in Ge/Si(100) systems, the thin films display a curious asymmetry with respect to the sign of the strain: Films under compression roughen by forming coherent islands while those under tension remain relatively smooth. A possible mechanism behind this strain-induced type of roughening is the subject of this article.

Energetics of AlN Epitaxial Wetting Layers on SiC (0001)

1996 ◽  
Vol 449 ◽  
Author(s):  
R. Di Felice ◽  
J. E. Northrup ◽  
J. Neugebauer
Keyword(s):  
First Principles ◽  
Three Dimensional ◽  
Layer Growth ◽  
Layer By Layer ◽  
Two Dimensional ◽  
Charge Accumulation ◽  
Wetting Layer ◽  
Interface Charge ◽  
Wetting Layers

ABSTRACTWe present a first-principles characterization of the initial stages of formation of AlN films on c-plane SiC substrates. Studying the competition between two-dimensional films and three-dimensional islands as a function of Al and N abundances, we find that a two-dimensional film can wet the surface in N-rich conditions. Ordered layer-by-layer growth can proceed to some extent on this wetting layer, and is improved by the formation of an atomically mixed interface which eliminates interface charge accumulation. Our results indicate that the stable AlN films grow in the (0001) orientation on the Si-terminated SiC(0001) substrate.

An In-Situ Oblique-Incidence Optical Reflectance Difference Study of Co Electrodeposition on a Polycrystalline Au(111) Surface

2002 ◽  
Vol 721 ◽  
Author(s):  
J. Gray ◽  
W. Schwarzacher ◽  
X.D. Zhu
Keyword(s):  
Oblique Incidence ◽  
Three Dimensional ◽  
Oscillatory Behavior ◽  
Layer Growth ◽  
Deposition Condition ◽  
Layer By Layer ◽  
Optical Reflectance ◽  
Growth Modes ◽  
Highly Sensitive

AbstractWe studied submonolayer and multilayer deposition of Co on Au(111) using in-situ oblique-incidence optical reflectance difference (OI-RD). We show that the optical technique is highly sensitive and accurate in determining the electrodeposited film thickness and growth mode. We found that the optically determined thickness of the ultrathin Co film is in very good agreement with that deduced from the integration of the anodic current during cyclic voltammetry (CV). From a weak oscillatory behavior of the optical reflectance difference signal, it seems that the growth of electrodeposited Co on Au(111) under pulsed deposition condition proceeds by a combination of three dimensional island and quasi layer-by-layer growth modes.

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