An Analysis of Static and Dynamic Characteristics of 12kV 4H-SiC n-IGBT using HfO2-SiO2 Dielectric Stack at High Temperatures
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ABSTRACTIn this paper, the variation in device parameters is investigated with respect to temperature by considering the combination of HfO2-SiO2 on 4H-SiC n-IGBT. Two-dimensional numerical simulations using Setaurus TCAD have been performed to analyze the changes in static and dynamic characteristics. The switching waveforms have been analyzed using a clamped inductive circuit with and without HfO2. It seems that the presence of HfO2 in the dielectric stack has a considerable impact on the device turn off time.
2010 ◽
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pp. 1031-1038
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pp. Pr3-81-Pr3-86
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Vol E92-B
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pp. 998-1003
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pp. 313-328
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Vol 103
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