Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters

MRS Advances ◽  
2018 ◽  
Vol 3 (5) ◽  
pp. 247-253 ◽  
Author(s):  
Guilherme R. de Lima ◽  
João Paulo Braga ◽  
Giovani Gozzi ◽  
Lucas Fugikawa Santos

ABSTRACTMetal oxides like zinc oxide (ZnO) are promising materials for the active layer of thin-film transistors (TFTs) used in the drive circuit of next-generation large-area active matrix displays due to their high electronic mobility, high transmittance in the optical visible range and processability. Traditional deposition techniques employ RF sputtering or pulsed-laser deposition (PLD), which are relatively sophisticated techniques. The deposition of very thin (less than 50 nm thick) layers of ZnO using soluble organic precursors have been extensively investigated recently as an alternative to traditional deposition methods. Solution-based deposition processes include simple and affordable techniques like dip-coating, spin-coating, spray-pyrolysis and ink-jet printing. Spray-pyrolysis is particularly interesting due to the high film uniformity, low cost and high device performance. We carried out several experiments analyzing the performance of ZnO based devices using zinc acetate as organic precursor to confirm that spray pyrolysis deposition is a suitable technique for production of high-performance and reproducible TFTs. Moreover, we observed that device performance can significantly vary with little modifications on the deposition parameters, even for the same active layer composition and pyrolysis temperature. Electrical parameters, as the electrical mobility and the on/off ratio, varied several orders of magnitude, whereas the threshold voltage varied up to 20 V for the tested devices. Deposition parameters as the nozzle height during the deposition, nozzle air pressure and deposition time were varied until we obtained devices with optimum electrical performance. Optimized devices presented mobilities in the order of 1 cm2.V-1.s-1, on/off ratio of about 106 and relatively low operation voltages. A statistical analysis of a great number of devices manufactured using the same deposition parameters was also carried out to assure the reproducibility of the deposition technique.

2021 ◽  
Vol 52 (S2) ◽  
pp. 702-702
Author(s):  
Zhendong Wu ◽  
Hengbo Zhang ◽  
Xiaolong Wang ◽  
Lingyan Liang ◽  
Hongtao Cao

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Zhuofa Chen ◽  
Dedong Han ◽  
Xing Zhang ◽  
Yi Wang

AbstractIn this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (TAL) TZO/ITO/TZO. The TAL TFTs were found to combine the advantages of SAL TFTs (a low off-state current) and DAL TFTs (a high mobility and a low threshold voltage). The proposed TAL TFTs exhibit superior electrical performance, e.g. a high on-off state current ratio of 2 × 108, a low threshold voltage of 0.63 V, a high field effect mobility of 128.6 cm2/Vs, and a low off-state current of 3.3 pA. The surface morphology and characteristics of the ITO and TZO films were investigated and the TZO film was found to be C-axis-aligned crystalline (CAAC). A simplified resistance model was deduced to explain the channel resistance of the proposed TFTs. At last, TAL TFTs with different channel lengths were also discussed to show the stability and the uniformity of our fabrication process. Owing to its low-processing temperature, superior electrical performance, and low cost, TFTs with the proposed TAL channel configuration are highly promising for flexible displays where the polymeric substrates are heat-sensitive and a low processing temperature is desirable.


Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1875
Author(s):  
Hwan-Seok Jeong ◽  
Hyun Seok Cha ◽  
Seong Hyun Hwang ◽  
Hyuck-In Kwon

In this study, we examined the effects of the annealing atmosphere on the electrical performance and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film transistors (TFTs). The annealing process was performed at a temperature of 180 °C under N2, O2, or air atmosphere after the deposition of IGTO thin films by direct current magnetron sputtering. The field-effect mobility (μFE) of the N2- and O2-annealed IGTO TFTs was 26.6 cm2/V·s and 25.0 cm2/V·s, respectively; these values were higher than that of the air-annealed IGTO TFT (μFE = 23.5 cm2/V·s). Furthermore, the stability of the N2- and O2-annealed IGTO TFTs under the application of a positive bias stress (PBS) was greater than that of the air-annealed device. However, the N2-annealed IGTO TFT exhibited a larger threshold voltage shift under negative bias illumination stress (NBIS) compared with the O2- and air-annealed IGTO TFTs. The obtained results indicate that O2 gas is the most suitable environment for the heat treatment of IGTO TFTs to maximize their electrical properties and stability. The low electrical stability of the air-annealed IGTO TFT under PBS and the N2-annealed IGTO TFT under NBIS are primarily attributed to the high density of hydroxyl groups and oxygen vacancies in the channel layers, respectively.


2014 ◽  
Vol 43 (11) ◽  
pp. 4241-4245 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Yong Uk Lee ◽  
Lee Winchester ◽  
Jaeeun Hwang ◽  
...  

2019 ◽  
Vol 7 (25) ◽  
pp. 7627-7635 ◽  
Author(s):  
Felix Jaehnike ◽  
Duy Vu Pham ◽  
Claudia Bock ◽  
Ulrich Kunze

We study the effect of gallium and yttrium doping on both the electrical performance and the stability of indium based metal-oxide thin-film transistors (MOTFTs) at varied concentrations.


2017 ◽  
Vol 17 (11) ◽  
pp. 7917-7920
Author(s):  
Seungil Choi ◽  
Yooseng Lim ◽  
Min Hyung Jang ◽  
Ji In Park ◽  
Nam Kyung Hwang ◽  
...  

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