Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors

2012 ◽  
Vol 30 (4) ◽  
pp. 041208 ◽  
Author(s):  
Jun Yong Bak ◽  
Sung Min Yoon ◽  
Shinhyuk Yang ◽  
Gi Heon Kim ◽  
Sang-Hee Ko Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Process Temperature ◽  
Oxide Thin Film

Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters

MRS Advances ◽  
2018 ◽  
Vol 3 (5) ◽  
pp. 247-253 ◽  
Author(s):  
Guilherme R. de Lima ◽  
João Paulo Braga ◽  
Giovani Gozzi ◽  
Lucas Fugikawa Santos
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Spray Deposition ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Device Performance ◽  
Organic Precursor ◽  
Deposition Parameters

ABSTRACTMetal oxides like zinc oxide (ZnO) are promising materials for the active layer of thin-film transistors (TFTs) used in the drive circuit of next-generation large-area active matrix displays due to their high electronic mobility, high transmittance in the optical visible range and processability. Traditional deposition techniques employ RF sputtering or pulsed-laser deposition (PLD), which are relatively sophisticated techniques. The deposition of very thin (less than 50 nm thick) layers of ZnO using soluble organic precursors have been extensively investigated recently as an alternative to traditional deposition methods. Solution-based deposition processes include simple and affordable techniques like dip-coating, spin-coating, spray-pyrolysis and ink-jet printing. Spray-pyrolysis is particularly interesting due to the high film uniformity, low cost and high device performance. We carried out several experiments analyzing the performance of ZnO based devices using zinc acetate as organic precursor to confirm that spray pyrolysis deposition is a suitable technique for production of high-performance and reproducible TFTs. Moreover, we observed that device performance can significantly vary with little modifications on the deposition parameters, even for the same active layer composition and pyrolysis temperature. Electrical parameters, as the electrical mobility and the on/off ratio, varied several orders of magnitude, whereas the threshold voltage varied up to 20 V for the tested devices. Deposition parameters as the nozzle height during the deposition, nozzle air pressure and deposition time were varied until we obtained devices with optimum electrical performance. Optimized devices presented mobilities in the order of 1 cm2.V-1.s-1, on/off ratio of about 106 and relatively low operation voltages. A statistical analysis of a great number of devices manufactured using the same deposition parameters was also carried out to assure the reproducibility of the deposition technique.

High Reliable and Manufacturable Gallium Indium Zinc Oxide Thin-Film Transistors Using the Double Layers as an Active Layer

2009 ◽  
Vol 156 (3) ◽  
pp. H184 ◽  
Author(s):  
Sun IL Kim ◽  
Jin-Seong Park ◽  
Chang Jung Kim ◽  
Jae Chul Park ◽  
Ihun Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Double Layers ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Selective UV–O3treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KB01
Author(s):  
Yu-Jung Kim ◽  
Jun-Kyo Jeong ◽  
Jung-Hyun Park ◽  
Byung-Jun Jeong ◽  
Hi-Deok Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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