Conformal Carbon Nanotube Coatings for Ceramic Composite Structures

MRS Advances ◽  
2017 ◽  
Vol 2 (28) ◽  
pp. 1499-1503 ◽  
Author(s):  
Ken Bosnick ◽  
Pouyan Motamedi ◽  
Tim Patrie ◽  
Kenneth Cadien
Keyword(s):  
Composite Structures ◽  
Ceramic Composite ◽  
Chemical Vapor ◽  
Composite Plates ◽  
Atomic Layer ◽  
Deposition Process ◽  
Metal Films ◽  
Laminate Composites ◽  
Layer Deposition ◽  
Nickel Oxide Films

ABSTRACTCatalytic chemical vapor deposition enables the synthesis and deposition of carbon nanotubes (CNT) directly on substrates, thereby immobilizing them and potentially preventing them from bundling after synthesis. In this work, we investigate the use of this strategy to prepare ceramic hybrids with unbundled CNTs on aluminum oxide (AO) powder and fabric substrates, which are commonly used in the fabrication of ceramic laminate composites. CNT –AO powder hybrids are produced in 250 g batches with up to about 3 wt% CNT content, which is a sufficient amount for sintering into composite plates for mechanical and ballistic characterization. CNT – AO fabric hybrids are produced and it is found that the polymer coating that comes on the as-purchased fabric aids with CNT deposition. Conformal nickel and nickel oxide films deposited by an atomic layer deposition process are found to be excellent catalysts for CNT deposition. These conformal metal films are being used to create better CNT – ceramic hybrids for processing into better composite materials.

scholarly journals Atomic layer deposited V2O5 coatings: a promising cathode for Li-ion batteries

2019 ◽  
Vol 10 (1) ◽  
pp. 21-28
Author(s):  
Martyn Pemble ◽  
Ian Povey ◽  
Dimitra Vernardou
Keyword(s):  
Vanadium Pentoxide ◽  
Coulombic Efficiency ◽  
Lithium Ion ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Deposition Process ◽  
Chemical Vapor Deposition Growth ◽  
Layer Deposition ◽  
Specific Discharge ◽  
Cathodic And Anodic Processes

A modified, thermal atomic layer deposition process was employed for the pulsed chemical vapor deposition growth of vanadium pentoxide films using tetrakis (dimethylamino) vanadium and water as a co-reagent.Depositions were carried out at 350oC for 400 pulsed CVD cycles, and samples were subsequently annealed for 1hour at 400°C in air to form materials with enhanced cycling stability during the continuous lithium-ion intercala­tion/deintercalation processes. The diffusion coefficient was estimated to be 2.04x10-10 and 4.10x10-10 cm2 s-1 for the cathodic and anodic processes, respectively. These values are comparable or lower than those reported in the literature, indicating the capability of Li+ of getting access into the vanadium pentoxide framework at a fast rate. Overall, it presents a specific discharge capacity of 280 mAh g-1, capacity retention of 75 % after 10000 scans, a coulombic efficiency of 100 % for the first scan, dropping to 85 % for the 10000th scan, and specific energy of 523 Wh g-1.

Quantitative Aspects of PLAD Sidewall Doping Characterization by SIMS and APT

2018 ◽  
Vol 25 (2) ◽  
pp. 511-516
Author(s):  
Dimitry Kouzminov ◽  
James Cournoyer ◽  
Somchintana Norasetthekul ◽  
Harish Muthuraman ◽  
Qi Gao
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Deposition Process ◽  
Atom Probe ◽  
Adverse Impacts ◽  
Layer Deposition ◽  
Quantitative Results ◽  
Secondary Ion

AbstractApplication of atom probe tomography (APT) and 1.5D secondary ion mass spectrometry (SIMS) as complimentary techniques to study fin sidewall doping by plasma implantation (PLAD) is the focus of this paper. Unlike planar transistors, characterization of 3D devices both by SIMS and APT requires sample preparation via trench backfill with α-Si, or other material, via chemical vapor deposition or atomic layer deposition process due to high aspect ratio of test structures. Certain artifacts with adverse impacts on quantitative results encountered in this study are discussed.

scholarly journals 2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Hongyan Xu ◽  
Mohammad Karbalaei Akbari ◽  
Serge Zhuiykov
Keyword(s):  
Liquid Metals ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
First Century ◽  
2D Semiconductors ◽  
Layer Deposition ◽  
Semiconductor Nanomaterials ◽  
2D Nanomaterials ◽  
Novel Applications ◽  
Electronic Technologies

AbstractTwo-dimensional (2D) semiconductors beyond graphene represent the thinnest stable known nanomaterials. Rapid growth of their family and applications during the last decade of the twenty-first century have brought unprecedented opportunities to the advanced nano- and opto-electronic technologies. In this article, we review the latest progress in findings on the developed 2D nanomaterials. Advanced synthesis techniques of these 2D nanomaterials and heterostructures were summarized and their novel applications were discussed. The fabrication techniques include the state-of-the-art developments of the vapor-phase-based deposition methods and novel van der Waals (vdW) exfoliation approaches for fabrication both amorphous and crystalline 2D nanomaterials with a particular focus on the chemical vapor deposition (CVD), atomic layer deposition (ALD) of 2D semiconductors and their heterostructures as well as on vdW exfoliation of 2D surface oxide films of liquid metals.

High growth-rate atomic layer deposition process of cerium oxide thin film for solid oxide fuel cell

2019 ◽  
Vol 45 (3) ◽  
pp. 3811-3815 ◽  
Author(s):  
Jin-Geun Yu ◽  
Byung Chan Yang ◽  
Jeong Woo Shin ◽  
Sungje Lee ◽  
Seongkook Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
Atomic Layer ◽  
Deposition Process ◽  
High Growth Rate ◽  
Solid Oxide ◽  
Oxide Thin Film ◽  
Oxide Fuel ◽  
Layer Deposition

scholarly journals In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process

ACS Omega ◽  
2018 ◽  
Vol 3 (11) ◽  
pp. 14567-14574 ◽  
Author(s):  
Mantu K. Hudait ◽  
Michael B. Clavel ◽  
Jheng-Sin Liu ◽  
Shuvodip Bhattacharya
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Process ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition

scholarly journals Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Coatings ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 5 ◽  
Author(s):  
César Masse de la Huerta ◽  
Viet Nguyen ◽  
Jean-Marc Dedulle ◽  
Daniel Bellet ◽  
Carmen Jiménez ◽  
...  
Keyword(s):  
Fluid Dynamics ◽  
Atomic Layer Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Dynamics Simulation ◽  
Selective Deposition ◽  
Temporal Separation ◽  
Present Contribution ◽  
Chemical Vapor Deposition Growth ◽  
Layer Deposition

Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining momentum since it is a high throughput and low-cost alternative to conventional atomic layer deposition (ALD). SALD relies on a physical separation (rather than temporal separation, as is the case in conventional ALD) of gas-diluted reactants over the surface of the substrate by a region containing an inert gas. Thus, fluid dynamics play a role in SALD since precursor intermixing must be avoided in order to have surface-limited reactions leading to ALD growth, as opposed to chemical vapor deposition growth (CVD). Fluid dynamics in SALD mainly depends on the geometry of the reactor and its components. To quantify and understand the parameters that may influence the deposition of films in SALD, the present contribution describes a Computational Fluid Dynamics simulation that was coupled, using Comsol Multiphysics®, with concentration diffusion and temperature-based surface chemical reactions to evaluate how different parameters influence precursor spatial separation. In particular, we have used the simulation of a close-proximity SALD reactor based on an injector manifold head. We show the effect of certain parameters in our system on the efficiency of the gas separation. Our results show that the injector head-substrate distance (also called deposition gap) needs to be carefully adjusted to prevent precursor intermixing and thus CVD growth. We also demonstrate that hindered flow due to a non-efficient evacuation of the flows through the head leads to precursor intermixing. Finally, we show that precursor intermixing can be used to perform area-selective deposition.

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