scholarly journals Electromechanical Fields in Piezoelectric Semiconductor Nanofibers under an Axial Force

MRS Advances ◽  
2017 ◽  
Vol 2 (56) ◽  
pp. 3421-3426 ◽  
Author(s):  
C.L. Zhang ◽  
Y.X. Luo ◽  
R.R. Cheng ◽  
X.Y. Wang

ABSTRACTPiezoelectric semiconductors (PS) nanofibers, which simultaneously exhibit piezoelectricity and unique electric conductive behavior, have huge applications in sensors, energy harvesters, and piezoelectric field effect transistors. Electromechanical fields and charge carrier in PS nanofibers can be effectively controlled by a mechanical force. One-dimensional linear equations for PS nanofibers, which are suitable for small axial force and small electron concentration perturbation, are presented. Analytical expressions for the electromechanical fields and electron concentration in the fiber are obtained. Numerical results show that the electromechanical fields near the two ends are sensitive to the initial electron concentration and the applied axial force.

2012 ◽  
Vol 116 (12) ◽  
pp. 7118-7125 ◽  
Author(s):  
Gen-Wen Hsieh ◽  
JinJin Wang ◽  
Ken Ogata ◽  
John Robertson ◽  
Stephan Hofmann ◽  
...  

2019 ◽  
Vol 21 (35) ◽  
pp. 19567-19574 ◽  
Author(s):  
Jianwei Zhao ◽  
Na Cheng ◽  
Yuanyuan He

The one-dimensional (1D) acceptor–donor (A–D) hetero-nanotube (HNT) has attracted much attention as a potential candidate for a channel structure of next-generation field effect transistors (FETs).


2011 ◽  
Vol 98 (1) ◽  
pp. 013303 ◽  
Author(s):  
Yasuyuki Sugawara ◽  
Yumiko Kaji ◽  
Keiko Ogawa ◽  
Ritsuko Eguchi ◽  
Shohei Oikawa ◽  
...  

2015 ◽  
Vol 14 (1) ◽  
pp. 94-106 ◽  
Author(s):  
Giuseppe Iannaccone ◽  
Alessandro Betti ◽  
Gianluca Fiori

2018 ◽  
Vol 98 (23) ◽  
Author(s):  
F. J. Schupp ◽  
Muhammad M. Mirza ◽  
Donald A. MacLaren ◽  
G. Andrew D. Briggs ◽  
Douglas J. Paul ◽  
...  

2001 ◽  
Vol 01 (04) ◽  
pp. L221-L226 ◽  
Author(s):  
S. L. RUMYANTSEV ◽  
N. PALA ◽  
M. S. SHUR ◽  
M. E. LEVINSHTEIN ◽  
P. A. IVANOV ◽  
...  

The dependence of the 1/f noise on 2D electron concentration in the channel n Ch of AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors has been studied and compared. The dependencies of Hooge parameter αCh for the noise sources located in the channel of the transistors on sheet electron concentration are found identical for both types of devices. The increase of the Hooge parameter αCh with the decrease of the channel concentration observed in both types of devices confirms that the noise sources are located in the region under the gate in the AlGaN/GaN heterostructure and that electron tunneling from the 2D electron gas into the traps in GaN or AlGaN layers is a probable noise mechanism.


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