Electronic Properties of CdTe/CdS Solar Cells as Influenced by a Buffer Layer

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 937-942 ◽  
Author(s):  
Y. G. Fedorenko ◽  
J. D. Major ◽  
A. Pressman ◽  
L. Phillips ◽  
K. Durose
Keyword(s):  
Solar Cells ◽  
Grain Boundary ◽  
Electronic Properties ◽  
Buffer Layer ◽  
Defect Density ◽  
Deep Trap ◽  
Energy Shift ◽  
Buffer Layers ◽  
Cdte Solar Cells ◽  
Strain Interaction

ABSTRACTWe considered modification of the defect density of states in CdTe as influenced by a buffer layer in ZnO(ZnS, SnSe)/CdS/CdTe solar cells. Compared to the solar cells employing ZnO buffer layers, implementation of ZnSe and ZnS resulted in the lower net ionized acceptor concentration and the energy shift of the dominant deep trap levels to the midgap of CdTe. The results clearly indicated that the same defect was responsible for the inefficient doping and the formation of recombination centers in CdTe. This observation can be explained taking into account the effect of strain on the electronic properties of the grain boundary interface states in polycrystalline CdTe. In the conditions of strain, interaction of chlorine with the grain boundary point defects can be altered.

A Comparative Study of the Thin-Film CdTe Solar Cells with ZnSe/TCO and the CdS/TCO Buffer Layers

2011 ◽  
Vol 1324 ◽  
Author(s):  
Tamara Potlog ◽  
Nicolae Spalatu ◽  
Arvo Mere ◽  
Jaan Hiie ◽  
Valdek Mikli
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Buffer Layers ◽  
Glass Substrates ◽  
Cdte Solar Cells ◽  
Zinc Blende ◽  
Photovoltaic Parameters ◽  
Cdte Films ◽  
First Time ◽  
Zinc Blende Structure

ABSTRACTThe growth of ZnSe and CdTe thin films by close spaced sublimation is examined. The investigations show that ZnSe films deposited on glass substrates are polycrystalline and exhibit wurtzite-zinc-blende polytypism. The CdTe films grown on glass/SnO2/ZnSe are polycrystalline and have an f.c.c. zinc-blende structure as in the case of a glass/SnO2/CdS buffer layer. The electric and photovoltaic parameters of ZnSe/CdTe solar cells depend on the ZnSe film thickness. Furthermore, it is shown for the first time that the best photovoltaic parameters are achieved using a Zn buffer layer at the interface between ZnSe and CdTe.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Attainment of Stable (FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au) Perovskite Solar Cell With Above 23% Photovoltaic Performance Using Solar Capacitance Simulator

2021 ◽  
Author(s):  
Irfan Qasim ◽  
Owais Ahmad ◽  
Asim Rashid ◽  
Tashfeen Zehra ◽  
Muhammad Imran Malik ◽  
...  
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Buffer Layers ◽  
Electron Transport Layer ◽  
Device Performance ◽  
Highly Efficient

Abstract Solar energy is found to be low cost and abundant of all available energy resources and needs exploration of highly efficient devices for global energy requirements. We have investigated methyl ammonium tin halide (CH3NH3SnI3)-based perovskite solar cells (PSCs) for optimized device performance using solar capacitance simulator SCAPS-1D software. This study is a step forward towards availability of stable and non-toxic solar cells. We explored all necessary parameters such as metal work functions, thickness of absorber and buffer layers, charge carrier’s mobility and defect density for improved device performance. Calculations revealed that for the best efficiency of device the maximum thickness of the perovskite absorber layer must be 4.2 μm. Furthermore, optimized thickness values of (ZnO=0.01 μm) as electron transport layer (ETL), GaAs as hole transport layer (HTL=3.02 μm) and (CdS=10 nm) and buffer layer have provided power conversion efficiency (PCE) of 23.53%. Variation of open circuit voltage (Voc), Short circuit current (Jsc), Fill Factor (FF%) and quantum efficiency against thickness of all layers in FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au compositions have been critically explored and reported. Interface defects and defect density in different inserted layers have also been reported in this study as they can play a crucial for the device performance. Insertion of ZnO layer and CdS buffer layers have shown improved device performance and PCE. Current investigations may prove to be useful for designing and fabrication of climate friendly, non-toxic and highly efficient solar cells.

scholarly journals Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer

AIP Advances ◽  
2011 ◽  
Vol 1 (4) ◽  
pp. 042152 ◽  
Author(s):  
Songbai Hu ◽  
Zhe Zhu ◽  
Wei Li ◽  
Lianghuan Feng ◽  
Lili Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
And Performance

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

scholarly journals Atomic-scale Study of Grain Boundary Structures in Poly-Crystalline CdTe Solar Cells Using Abberation-Corrected STEM

2013 ◽  
Vol 19 (S2) ◽  
pp. 1986-1987
Author(s):  
T. Paulauskas ◽  
R.F. Klie ◽  
Z. Guo ◽  
E. Colegrove
Keyword(s):  
Solar Cells ◽  
Grain Boundary ◽  
Atomic Scale ◽  
Cdte Solar Cells

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

scholarly journals Degradation of Mg-doped zinc oxide buffer layers in thin film CdTe solar cells

2019 ◽  
Vol 691 ◽  
pp. 137556 ◽  
Author(s):  
Francesco Bittau ◽  
Shridhar Jagdale ◽  
Christos Potamialis ◽  
Jake W. Bowers ◽  
John M. Walls ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Buffer Layers ◽  
Cdte Solar Cells ◽  
Mg Doped
Sign in / Sign up

Export Citation Format

Share Document