Selective fabrication of Si nanodots and nanowires

MRS Advances ◽  
2016 ◽  
Vol 1 (33) ◽  
pp. 2337-2343
Author(s):  
Anahita Haghizadeh ◽  
Haeyeon Yang
Keyword(s):  
Atomic Force Microscopy ◽  
Laser Pulses ◽  
High Density ◽  
Single Application ◽  
Force Microscopy ◽  
Atomic Force ◽  
Large Density

ABSTRACTWe report observation of narrow nanowires and high density nanodots on the Si(001) surfaces when they are exposed to a single application of interferential irradiation of laser pulses of 7 ns. These nanostructures form selectively depending on interference parameters so that their placements can be controlled by controlling the parameters. The morphologies of the nanostructures are studied by atomic force microscopy. The nanowire width increases with interference period. The narrowest nanowires observed have the width smaller than 26 nm, which is eight times smaller than the interference period while the nanodots have a very large density of 1.8 ± 0.45) × 1011/cm2.

EX SITU ATOMIC FORCE MICROSCOPY STUDIES OF SURFACE MORPHOLOGY ON {001} FACES OF MMTWD CRYSTALS

2006 ◽  
Vol 13 (05) ◽  
pp. 607-611
Author(s):  
X. J. LIU ◽  
X. Q. WANG ◽  
Z. Y. WANG ◽  
D. XU ◽  
G. W. YU ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Temperature Stress ◽  
Growth Rates ◽  
High Density ◽  
Ex Situ ◽  
Force Microscopy ◽  
Elementary Steps ◽  
Atomic Force

Surface morphology of the {001} faces of MMTWD crystals grown from by the temperature-lowering method has been studied. Monolayer and multilayer steps elongate along the a direction, which is determined by the crystal structure. Apart from that, the elementary steps have narrower terraces than the bunched ones, which may be resulting from the faster growth rates of the former than the latter. The formation of the protuberances at the step fronts is primarily associated with the uneven growth rates. The hollow cavities also elongate along the a direction, which demonstrates that the formation of them is also restricted by the crystal structure. Cracks are supposed to occur during harvesting, handling, or temperature stress afterwards. Growth of the 3D hillocks in high density can probably cause large stress and induce structure mismatch and serious cracks at the later stage.

CVD Growth and Excimer Laser Processing of SiGe Alloys Monitored by Single Wavelength Ellipsometry and Atomic Force Microscopy

1997 ◽  
Vol 502 ◽  
Author(s):  
R. Larciprete ◽  
G. Padeletti ◽  
S. Cozzi ◽  
S. Pieretti
Keyword(s):  
Atomic Force Microscopy ◽  
Laser Processing ◽  
Growth Parameters ◽  
Laser Pulses ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis ◽  
Cvd Growth ◽  
Sample Irradiation

ABSTRACTSingle wavelength ellipsometry was used to monitor the CVD growth of Si(1-x)Gex alloys onSi and to evaluate the effect of sample irradiation by KrF laser pulses, performed during or afterthe CVD growth. The information obtained was correlated with AFM analysis results in order tooptimize the growth parameters for an improved morphological quality of the alloy layers.

A Robust LPCVD Nitride Integrated Process for High Density Non-Volatile Eprom Memories

1993 ◽  
Vol 303 ◽  
Author(s):  
R. B. Sethi ◽  
R. P. Ciari ◽  
L. Anderson ◽  
U. S. Kim ◽  
A. Bergemont
Keyword(s):  
Silicon Carbide ◽  
Atomic Force Microscopy ◽  
Memory Cell ◽  
High Density ◽  
Optical Methods ◽  
Integrated Process ◽  
Force Microscopy ◽  
Atomic Force ◽  
Key Features ◽  
Gas Ratio

ABSTRACTA robust 6" hotwall flatzone nitride system is developed for scaled ONO interpoly. dielectric application in a high density EPROM memory cell. This system is designed to operate at low temperature (660° C) and gas ratio (4:1 NH3: DCS) with integrated silicon carbide components. The obtained key features are low defects (0.25 #/cm2 particles), smooth topography (measured by atomic force microscopy) and superior electrical interface as measured by electrical and optical methods.

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