Thermal stability of WAlN/WAlON/Al2O3-based solar selective absorber coating

MRS Advances ◽  
2016 ◽  
Vol 1 (41) ◽  
pp. 2807-2813 ◽  
Author(s):  
Atasi Dan ◽  
Kamanio Chattopadhyay ◽  
Harish C. Barshilia ◽  
Bikramjit Basu

AbstractThe solar absorptance property of W/WAlN/WAlON/Al2O3-based coatings, deposited by DC/RF magnetron sputtering on stainless steel substrate was studied by measuring the reflectance spectra in the wavelength range of 250 - 2500 nm. The effect of thermal annealing on the optical properties of the solar selective absorber coatings was investigated. Annealing the coatings at 450°C for 150 hrs in air did not show any significant change in the spectral properties of the absorber coating indicating the excellent thermal stability of the coating. The W layer acts as infrared reflective layer and diffusion barrier on stainless steel substrate. The top Al2O3 layer serves as dense shield to protect the under layers from oxidation in air. In summary, the present study indicates the potential application of W/WAlN/WAlON/Al2O3-based selective coatings in high temperature photo thermal conversion systems.

2009 ◽  
Vol 419-420 ◽  
pp. 537-540
Author(s):  
Ming Hui Ding ◽  
Ben Li Wang ◽  
Li Li ◽  
Yu Feng Zheng

In this paper, the TaCx coating with thickness around 1.2 μm was prepared by radio frequency magnetron sputtering technique on the 316L stainless steel substrate to improve its hemocompatibility. The structure and morphology of the coating were characterized by XRD and SEM. The XRD results indicated that TaCx, as a new species, appeared on the surface of the 316L stainless steel substrate. SEM images showed that the surface morphology of the TaCx coating was uniform and dense. The mechanical characteristics of the coating were measured by nanoindentation, giving a nanohardness of 13 GPa and a Young’s modulus of 210 GPa. The adhesion strength of the TaCx coating to 316L stainless steel depended on the sputtering bias voltages and increased for a higher bias voltage. The hemocompatibility of the TaCx coating, as evaluated by platelet adhesion tests, was compared to that of the bare 316L stainless steel. The results indicated that the hemocompatibility of 316L stainless steel with TaCx coating was significantly improved as compared to the original one.


Molecules ◽  
2020 ◽  
Vol 25 (5) ◽  
pp. 1178 ◽  
Author(s):  
Hongwen Yu ◽  
Jinkai Li ◽  
Qian Zhang ◽  
Wei Pang ◽  
Hui Yan ◽  
...  

The solar selective absorber coating (SSAC) are at the core of the efficient solar-thermal system. In this paper, for the first time, the Chromium-iron oxidation mixture cermet was successfully prepared on the surface of ultra-pure ferritic stainless steel by chemical coloring as SSAC. The coating surface has an optical trap structure, and the chromium-iron oxidation mixture cermet is used as an absorption layer to realize solar-thermal conversion. The solar absorptance (AM1.5) of the coating reached 93.66, and the thermal emittance was less than 13. After thermal shock tests at 25/300 °C done 32 times (accumulated 812.8 h), the Performance Criterion (PC) of the coating was 0.01375 < 0.05, showing outstanding thermal stability.


2007 ◽  
Vol 26-28 ◽  
pp. 899-904
Author(s):  
Cong Wang ◽  
Xin Kang Du ◽  
Tian Min Wang

A new cermet film Nb-NbN, deposited on the stainless steel substrate by direct reactive magnetron sputtering, was reported as solar selective absorptive coating. Some fundamental studies on microstructure and optical properties of the Nb-NbN cermet films were carried out by XRD, EDX, SEM and spectrophotometer. A solar absorptivity of 0.94 and a normal emissivity of 0.16 at room temperature were achieved for the coating. Thermal stability was investigated at 350°C and 500°C and it was observed that the absorptivity was changed in a range from 0.92 to 0.94 and the surface emissivity varied firstly from 0.16 to 0.14 and then increasing to 0.19 when the temperature was increased from room temperature to 350°C and up to 500°C.


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


2013 ◽  
Vol 133 (4) ◽  
pp. 126-127 ◽  
Author(s):  
Shota Hosokawa ◽  
Motoaki Hara ◽  
Hiroyuki Oguchi ◽  
Hiroki Kuwano

2020 ◽  
Vol 32 (4) ◽  
pp. 042015
Author(s):  
Alireza Mostajeran ◽  
Reza Shoja-Razavi ◽  
Morteza Hadi ◽  
Mohammad Erfanmanesh ◽  
Hadi Karimi

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