Structural and Electrical Characterization of Amorphous and Crystalline Manganese Oxide Thin Films Deposited by DC Magnetron Sputtering

MRS Advances ◽  
2016 ◽  
Vol 1 (60) ◽  
pp. 3929-3934 ◽  
Author(s):  
David H. Olson ◽  
Kenneth D. Shaughnessy ◽  
Emma G. Langford ◽  
Michael Boyle ◽  
Muhammad B. Haider ◽  
...  

ABSTRACTThe environmental impact resulting from the use of fossil fuel as an energy source affects the entire globe. Eventually, fossil fuels will no longer be a reasonable source of energy and alternative energy sources will be needed. Thermoelectric materials (TE) that directly convert heat into electricity are a viable option to replace the conventional fossil fuel because they are reliable, cost effective, and use no moving parts. Recently researchers discovered the existence of giant Seebeck coefficient in manganese oxide (MnO2) powders, which ignited an increased interest in MnO2-based materials. In this work we present a systematic structural and electrical characterization of amorphous and crystalline MnxOy thin films. These films were deposited at room temperature on heated silicon and sapphire substrates by DC Magnetron Sputtering. Our preliminary results show that MnxOy/silicon thin films undergo a crystalline change from Mn2O3 to Mn3O4 as annealing temperature is increased from 300°C to 500°C.

2002 ◽  
Vol 16 (04) ◽  
pp. 127-133 ◽  
Author(s):  
A. V. POP ◽  
G. ILONCA ◽  
MARIANA POP ◽  
R. DELTOUR

Bi2.1Sr1.9CuOy thin films (Bi:2201) were deposited onto heated single crystal (100) MgO substrates using inverted cylindrical DC magnetron sputtering with different partial pressures of oxygen in a sputtering gas. The behavior of the normal state resistivity function of temperature is strongly influenced by the composition of sputtering gas used in thin films synthesis. Near the transition to the superconducting state, electrical resistivity changes strongly from "metallic" to insulator (MI). The origin for the increase of electrical resistance was analyzed using some models for the localization of mobile carriers. A good linearity is obtained for ln R as a function of Tα for α = 1/10 and for R as a function of ln T. The last behavior agrees with the pinning and fragmentation of 1D stripes in CuO2 planes.


Vacuum ◽  
2021 ◽  
Vol 188 ◽  
pp. 110200
Author(s):  
Sihui Wang ◽  
Wei Wei ◽  
Yonghao Gao ◽  
Haibin Pan ◽  
Yong Wang

Vacuum ◽  
2018 ◽  
Vol 153 ◽  
pp. 62-69 ◽  
Author(s):  
Yueming Li ◽  
Guorui Zhao ◽  
Yuhai Qian ◽  
Jingjun Xu ◽  
Meishuan Li

2003 ◽  
Vol 433-436 ◽  
pp. 987-990 ◽  
Author(s):  
T. Seppänen ◽  
György Z. Radnóczi ◽  
Sukkaneste Tungasmita ◽  
L. Hultman ◽  
J. Birch

1996 ◽  
Vol 31 (23) ◽  
pp. 6137-6144 ◽  
Author(s):  
Yupu Li ◽  
J. A. Kilner ◽  
J. Thomas ◽  
D. Lacey ◽  
L. F. Cohen ◽  
...  

JOM ◽  
2013 ◽  
Vol 65 (4) ◽  
pp. 562-566 ◽  
Author(s):  
Tolga Tavsanoglu ◽  
Ceren Begum ◽  
Murat Alkan ◽  
Onuralp Yucel

2006 ◽  
Vol 291 (1) ◽  
pp. 290-300 ◽  
Author(s):  
O. Wilhelmsson ◽  
J.-P. Palmquist ◽  
E. Lewin ◽  
J. Emmerlich ◽  
P. Eklund ◽  
...  

2006 ◽  
Vol 153 (2) ◽  
pp. G164 ◽  
Author(s):  
Nguyen Duy Cuong ◽  
Dong-Jin Kim ◽  
Byoung-Don Kang ◽  
Chang Soo Kim ◽  
Kwang-Min Yu ◽  
...  

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