Characterization of Tantalum Nitride Thin Films Deposited on SiO[sub 2]∕Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors

2006 ◽  
Vol 153 (2) ◽  
pp. G164 ◽  
Author(s):  
Nguyen Duy Cuong ◽  
Dong-Jin Kim ◽  
Byoung-Don Kang ◽  
Chang Soo Kim ◽  
Kwang-Min Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Tantalum Nitride ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Thin Film Resistors

Characterization of Ti–Zr–V thin films deposited by DC and unipolar pulsed DC magnetron sputtering

Vacuum ◽  
2021 ◽  
Vol 188 ◽  
pp. 110200
Author(s):  
Sihui Wang ◽  
Wei Wei ◽  
Yonghao Gao ◽  
Haibin Pan ◽  
Yong Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Pulsed Dc ◽  
Pulsed Dc Magnetron Sputtering

Deposition and Characterization of Aluminium Thin film Coatings using DC Magnetron Sputtering Process

2018 ◽  
Vol 5 (1) ◽  
pp. 2696-2704 ◽  
Author(s):  
M. Muralidhar Singh ◽  
G. Vijaya ◽  
M.S. Krupashankara ◽  
B.K. Sridhara ◽  
T.N. Shridhar
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Film Coatings ◽  
Thin Film Coatings

scholarly journals Investigation of reactively sputtered TaN thin-film resistors for microwave photonic applications

2021 ◽  
pp. 93-98
Author(s):  
Evgenii Erofeev ◽  
Egor Polyntsev ◽  
Sergei Ishutkin
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Electrical Resistance ◽  
High Thermal Stability ◽  
Tantalum Nitride ◽  
Reactive Magnetron ◽  
Microwave Photonic ◽  
Thin Film Resistors ◽  
Thermal Stability Of

Electrophysical characteristics and their thermal stability of thin-film resistors based on tantalum nitride (TaN) obtained by reactive magnetron sputtering were investigated. The optimal modes of the magnetron sputtering process are determined, ensuring the Ta2N phase film composition with the value of the specific electrical resistance of 250 μm cm and high thermal stability of the parameters. On the basis of the investigations carried out, thin-film matching resistors were manufactured for use as part of an electro-optical InP-based MZ modulator

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

Growth and Characterization of Epitaxial Wurtzite Al1-xInxN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering

2003 ◽  
Vol 433-436 ◽  
pp. 987-990 ◽  
Author(s):  
T. Seppänen ◽  
György Z. Radnóczi ◽  
Sukkaneste Tungasmita ◽  
L. Hultman ◽  
J. Birch
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering

Characterization of YBa2Cu3O7−δ thin films deposited by dc magnetron sputtering

1996 ◽  
Vol 31 (23) ◽  
pp. 6137-6144 ◽  
Author(s):  
Yupu Li ◽  
J. A. Kilner ◽  
J. Thomas ◽  
D. Lacey ◽  
L. F. Cohen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering

FORMATION OF TRIANGULAR Cu MICROCRYSTALS IN Ti/Cu/Si THIN FILMS DURING ANNEALING

2018 ◽  
Vol 25 (05) ◽  
pp. 1850097
Author(s):  
QIJING LIN ◽  
WEIXUAN JING ◽  
ZHUANGDE JIANG ◽  
NA ZHAO ◽  
ZIRONG WU ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Rapid Thermal Annealing ◽  
Dc Magnetron Sputtering ◽  
Triangular Pyramid ◽  
Single Side ◽  
Surface Patterns ◽  
Cu Thin Film ◽  
Sputtering System

Sandwich stacked Ti/Cu/Si thin films were deposited on a single-side polished Si(111) substrate using DC magnetron sputtering system and annealed using a rapid thermal annealing (RTA) system. Complex dendritic patterns, whose branches are composed of Cu rods and triangular Cu microcrystals were obtained on Ti/Cu thin film annealed at 700[Formula: see text]C. The shape of one triangular Cu microcrystal is a truncated equilateral triangular pyramid with a flat top. Triangular Cu microcrystals grow in the number when Ti/Cu thin films are annealed at 800[Formula: see text]C. Experimental results show that anisotropy affects the growth of surface patterns and the top Ti capping layer works as a protection for the underlying Cu layer from oxidation.

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