Conductance switching behavior of GeTe/Sb2Te3 superlattice upon hot-electron injection: a scanning probe microscopy study

MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 375-380
Author(s):  
Leonid Bolotov ◽  
Yuta Saito ◽  
Tetsuya Tada ◽  
Junji Tominaga
Keyword(s):  
Practical Interest ◽  
Electron Injection ◽  
Microscopy Study ◽  
Scanning Probe ◽  
Switching Behavior ◽  
Hot Electron ◽  
Conductance Switching ◽  
Hot Electron Injection ◽  
Probe Microscope ◽  
Memory Applications

ABSTRACTTopological (GeTe)/(Sb2Te3) superlattices (SL) are of practical interest for memory applications because of different mechanism of electric conductance switching in the crystalline phase. In the work, electrical switching behavior of individual SL grains was examined employing a multimode scanning probe microscope (MSPM) in a lithography mode at room temperature. Using programmed bias voltage with different amplitude and pulse duration, we observed the position-dependent variations of the switching voltage and the current injection delay for [(GeTe)2 (Sb2Te3)]4 SLs on Si(100). The results shed a light on the role of electric field and hot-electron injection on the SL conductance switching.

Rectification in Chiral Carbon Nanotubes with Hot Electron Injection

2020 ◽  
Vol 131 (3) ◽  
pp. 456-459
Author(s):  
S. S. Abukari ◽  
R. Musah ◽  
M. Amekpewu ◽  
S. Y. Mensah ◽  
N. G. Mensah ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electron Injection ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Chiral Carbon

scholarly journals Simulation of GaAs submicron FET with hot-electron injection structure

1983 ◽  
Vol 19 (17) ◽  
pp. 697 ◽  
Author(s):  
K. Tomizawa ◽  
Y. Awano ◽  
N. Hashizume ◽  
M. Kawashima
Keyword(s):  
Electron Injection ◽  
Hot Electron ◽  
Hot Electron Injection

Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2395-L2397 ◽  
Author(s):  
Naoki Yasuda ◽  
Hiroshi Nakamura ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi ◽  
Masakazu Kakumu
Keyword(s):  
Electron Injection ◽  
Interface State ◽  
Generation Mechanism ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
State Generation

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior
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