Interface states in MOSFETs due to hot-electron injection determined by the charge pumping technique

1981 ◽  
Vol 17 (20) ◽  
pp. 761 ◽  
Author(s):  
D. Schmitt ◽  
G. Dorda
Keyword(s):  
Electron Injection ◽  
Interface States ◽  
Hot Electron ◽  
Charge Pumping ◽  
Hot Electron Injection

Electron Induced Depassivation Of H And D Terminated Si/Si02 Interfaces

1996 ◽  
Vol 446 ◽  
Author(s):  
R. A. B. Devine ◽  
W. L. Warren ◽  
K. Vanheusden ◽  
C. Mourrain ◽  
M‐J. Bouzid
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ultra Violet ◽  
Electron Injection ◽  
Interface States ◽  
Oxide Semiconductor ◽  
Hot Electron ◽  
Electrical Measurements ◽  
Hot Electron Injection ◽  
Spin Resonance

AbstractWe have performed electron spin resonance and electrical measurements on SiO2/Si structures subjected to anneals in 5% H2/N2 or 5% D2/N2 gases and subsequently injected with electrons using corona ions and ultra‐violet radiation. Threshold voltage and transconductance measurements have also been made on 0.25 μm metal‐oxide‐semiconductor transistors subjected to 400 °C anneals in the same gases and subsequently aged by hot electron injection. The electrical data on SiO2/Si structures indicates that the density of interface states increases as a result of electron injection but that there are only minor differences between H and D passivated interfaces. The data on Pb, trivalent Si dangling bond, centers at the same interfaces observed by electron spin resonance is insufficiently accurate to enable us to observe any significant differences. The hot electron injection experiments on transistors, consistent with other authors, indicate that, for the limited number of measurements we have made, the transistor ageing resulting from the generation of interface states is significantly reduced for devices annealed in the D containing gas as compared to those annealed in the H containing gas. The origins of some potential differences in annealing behaviour between the SiO2/Si structures and the 0.25 μm transistors are suggested.

Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection

2007 ◽  
Vol 84 (9-10) ◽  
pp. 1943-1946 ◽  
Author(s):  
M. Toledano-Luque ◽  
L. Pantisano ◽  
R. Degraeve ◽  
M.B. Zahid ◽  
I. Ferain ◽  
...  
Keyword(s):  
Electron Injection ◽  
Hot Electron ◽  
Charge Pumping ◽  
Hot Electron Injection

Rectification in Chiral Carbon Nanotubes with Hot Electron Injection

2020 ◽  
Vol 131 (3) ◽  
pp. 456-459
Author(s):  
S. S. Abukari ◽  
R. Musah ◽  
M. Amekpewu ◽  
S. Y. Mensah ◽  
N. G. Mensah ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electron Injection ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Chiral Carbon

scholarly journals Simulation of GaAs submicron FET with hot-electron injection structure

1983 ◽  
Vol 19 (17) ◽  
pp. 697 ◽  
Author(s):  
K. Tomizawa ◽  
Y. Awano ◽  
N. Hashizume ◽  
M. Kawashima
Keyword(s):  
Electron Injection ◽  
Hot Electron ◽  
Hot Electron Injection

Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2395-L2397 ◽  
Author(s):  
Naoki Yasuda ◽  
Hiroshi Nakamura ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi ◽  
Masakazu Kakumu
Keyword(s):  
Electron Injection ◽  
Interface State ◽  
Generation Mechanism ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
State Generation

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior
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