scholarly journals Wide Bandgap Engineering of Beta-(Al, Ga)$lt;inf$gt;2$lt;/inf$gt;O$lt;inf$gt;3$lt;/inf$gt; Mixed Crystals

2016 ◽  
Vol 31 (11) ◽  
pp. 1258 ◽  
Author(s):  
XIAO Hai-Lin ◽  
SHAO Gang-Qin ◽  
SAI Qing-Lin ◽  
XIA Chang-Tai ◽  
ZHOU Sheng-Ming ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Mixed Crystals ◽  
Bandgap Engineering

Compositional Investigation for Bandgap Engineering of Wide Bandgap Triple Cation Perovskite

2021 ◽  
Author(s):  
Jacopo Sala ◽  
Maryamsadat Heydarian ◽  
Stijn Lammar ◽  
Yaser Abdulraheem ◽  
Tom Aernouts ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Bandgap Engineering

Bandgap engineering of α-Ga2O3 by hydrostatic, uniaxial, and equibiaxial strain

2021 ◽  
Author(s):  
Takahiro Kawamura ◽  
Toru Akiyama
Keyword(s):  
First Principles ◽  
Compressive Strain ◽  
Correction Method ◽  
Wide Bandgap ◽  
Potential Range ◽  
First Principles Calculations ◽  
Bandgap Engineering ◽  
Wide Bandgap Semiconductor ◽  
Lattice Strains ◽  
Maximum Value

Abstract Ga2O3 is a wide bandgap semiconductor and an understanding of its bandgap tunability is required to broaden the potential range of Ga2O3 applications. In this study, the different bandgaps of α-Ga2O3 were calculated by performing first-principles calculations using the pseudopotential self-interaction correction method. The relationships between these bandgaps and the material's hydrostatic, uniaxial, and equibiaxial lattice strains were investigated. The direct and indirect bandgaps of strain-free α-Ga2O3 were 4.89 eV and 4.68 eV, respectively. These bandgap values changed linearly and negatively as a function of the hydrostatic strain. Under the uniaxial and equibiaxial strain conditions, the maximum bandgap appeared under application of a small compressive strain, and the bandgaps decreased symmetrically with increasing compressive and tensile strain around the maximum value.

Wide bandgap engineering of (GaIn)2O3 films

2014 ◽  
Vol 186 ◽  
pp. 28-31 ◽  
Author(s):  
Fabi Zhang ◽  
Katsuhiko Saito ◽  
Tooru Tanaka ◽  
Mitsuhiro Nishio ◽  
Qixin Guo
Keyword(s):  
Wide Bandgap ◽  
Bandgap Engineering

Wide bandgap engineering of (AlGa)2O3 films

2014 ◽  
Vol 105 (16) ◽  
pp. 162107 ◽  
Author(s):  
Fabi Zhang ◽  
Katsuhiko Saito ◽  
Tooru Tanaka ◽  
Mitsuhiro Nishio ◽  
Makoto Arita ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Bandgap Engineering

Bandgap engineering of the LuxY1−xPO4 mixed crystals

2016 ◽  
Vol 171 ◽  
pp. 33-39 ◽  
Author(s):  
V.S. Levushkina ◽  
D.A. Spassky ◽  
E.M. Aleksanyan ◽  
M.G. Brik ◽  
M.S. Tretyakova ◽  
...  
Keyword(s):  
Mixed Crystals ◽  
Bandgap Engineering

A polyaniline-coated ZnS/ZnO/FTO photoelectrode for improving photocorrosion prevention and visible light absorption

2019 ◽  
Vol 43 (42) ◽  
pp. 16699-16705 ◽  
Author(s):  
Hyun Kim ◽  
Bee Lyong Yang
Keyword(s):  
Quantum Dots ◽  
Visible Light ◽  
Light Absorption ◽  
Wide Bandgap ◽  
Bandgap Engineering ◽  
Wide Bandgap Semiconductors ◽  
Visible Light Absorption ◽  
Bandgap Semiconductors

To enhance the absorption of visible light for wide-bandgap semiconductors, methods such as sensitizing with nanoparticles or quantum dots and bandgap engineering using dopants have been reported.

Bandgap engineering of the amorphous wide bandgap semiconductor (SiC)1−x(AlN)x doped with terbium and its optical emission properties

2010 ◽  
Vol 174 (1-3) ◽  
pp. 114-118 ◽  
Author(s):  
R. Weingärtner ◽  
J.A. Guerra Torres ◽  
O. Erlenbach ◽  
G. Gálvez de la Puente ◽  
F. De Zela ◽  
...  
Keyword(s):  
Optical Emission ◽  
Wide Bandgap ◽  
Bandgap Engineering ◽  
Emission Properties ◽  
Wide Bandgap Semiconductor

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

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