scholarly journals Influence of Catalyst Film Thickness Deposited by Atomic Layer Deposition on the Growth of Aligned Carbon Nanotubes

2016 ◽  
Vol 31 (7) ◽  
pp. 681 ◽  
Author(s):  
YANG Chao ◽  
LI Ying ◽  
YAN Lu ◽  
CAO Yun-Zhen
Materials ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1095 ◽  
Author(s):  
Anna Szabó ◽  
László Péter Bakos ◽  
Dániel Karajz ◽  
Tamás Gyulavári ◽  
Zsejke-Réka Tóth ◽  
...  

Vertically aligned carbon nanotubes (VACNTs or “CNT forest”) were decorated with semiconductor particles (TiO2 and ZnO) by atomic layer deposition (ALD). Both the structure and morphology of the components were systematically studied using scanning (SEM) and high resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and X-ray diffraction (XRD) methods. Characterization results revealed that the decoration was successful in the whole bulk of VACNTs. The effect of a follow-up heat treatment was also investigated and its effect on the structure was proved. It was attested that atomic layer deposition is a suitable technique for the fabrication of semiconductor/vertically aligned carbon nanotubes composites. Regarding their technological importance, we hope that semiconductor/CNT forest nanocomposites find potential application in the near future.


2016 ◽  
Vol 27 (40) ◽  
pp. 405702 ◽  
Author(s):  
Sheng-Hsin Huang ◽  
Shih-Yun Liao ◽  
Chih-Chieh Wang ◽  
Chi-Chung Kei ◽  
Jon-Yiew Gan ◽  
...  

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.


2019 ◽  
Vol 16 (2) ◽  
pp. 855-862 ◽  
Author(s):  
Yang-Chih Hsueh ◽  
Chia-Te Hu ◽  
Chih-Chieh Wang ◽  
Chueh Liu ◽  
Tsong-Pyng Perng

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