Low-frequency noise and charge carrier transfer mechanisms in composites of carbon nanoparticles and dielectric matrix

2021 ◽  
Author(s):  
◽  
Marina Tretjak
2011 ◽  
Vol 98 (25) ◽  
pp. 252104 ◽  
Author(s):  
Geeta Rani Mutta ◽  
Jean Marc Routoure ◽  
Bruno Guillet ◽  
Laurence Méchin ◽  
Javier Grandal ◽  
...  

2017 ◽  
Vol 56 (4) ◽  
pp. 200-206 ◽  
Author(s):  
Vilius Palenskis

The possibility of determination of the number of localized capture centers of defects (relaxators) that cause low-frequency noise in a particular frequency range has been investigated. Here it is shown that a minimum number of relaxators is needed to generate 1/f type low-frequency noise only when relaxation times are arbitrarily distributed one-by-one in every two-octave range. The expression for estimation of the low-frequency noise level of the sample under test is presented. The presented expression for 1/f noise explains not only the noise level dependence both on the frequency and number of defects in the sample but also the observed noise intensity dependence on the mobility of free charge carriers. It is shown that the main source that causes low-frequency noise in homogeneous semiconductors is the charge carrier capture–emission process.


Vestnik MEI ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 120-127
Author(s):  
Mikhail D. Vorobyev ◽  
◽  
Dmitriy N. Yudaev ◽  
Andrey Yu. Zorin ◽  
◽  
...  

1999 ◽  
Author(s):  
Charles K. Birdsall ◽  
J. P. Varboncoeur ◽  
P. J. Christensen

2021 ◽  
Vol 182 ◽  
pp. 108203
Author(s):  
Lígia T. Silva ◽  
Alda Magalhães ◽  
José Ferreira Silva ◽  
Fernando Fonseca

Measurement ◽  
2021 ◽  
pp. 109867
Author(s):  
Krzysztof ACHTENBERG ◽  
Janusz MIKOŁAJCZYK ◽  
Carmine CIOFI ◽  
Graziella SCANDURRA ◽  
Krystian MICHALCZEWSKI ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document