Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

2013 ◽  
Vol 102 (5) ◽  
pp. 053114 ◽  
Author(s):  
Min-Kyu Joo ◽  
Junghwan Huh ◽  
Mireille Mouis ◽  
So Jeong Park ◽  
Dae-Young Jeon ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Polymethyl Methacrylate ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Charge Carrier Mobility ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Access Resistance

scholarly journals Orientation analysis of pentacene molecules in organic field-effect transistor devices using polarization-dependent Raman spectroscopy

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Bishwajeet Singh Bhardwaj ◽  
Takeshi Sugiyama ◽  
Naoko Namba ◽  
Takayuki Umakoshi ◽  
Takafumi Uemura ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Charge Carrier ◽  
Molecular Orientation ◽  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Orientation Distribution ◽  
High Resolution Technique

Abstract Pentacene, an organic molecule, is a promising material for high-performance field effect transistors due to its high charge carrier mobility in comparison to usual semiconductors. However, the charge carrier mobility is strongly dependent on the molecular orientation of pentacene in the active layer of the device, which is hard to investigate using standard techniques in a real device. Raman scattering, on the other hand, is a high-resolution technique that is sensitive to the molecular orientation. In this work, we investigated the orientation distribution of pentacene molecules in actual transistor devices by polarization-dependent Raman spectroscopy and correlated these results with the performance of the device. This study can be utilized to understand the distribution of molecular orientation of pentacene in various electronic devices and thus would help in further improving their performances.

Isoindigo-based polymer field-effect transistors: effects of selenophene-substitution on high charge carrier mobility

2015 ◽  
Vol 51 (38) ◽  
pp. 8120-8122 ◽  
Author(s):  
Kwang Hun Park ◽  
Kwang Hee Cheon ◽  
Yun-Ji Lee ◽  
Dae Sung Chung ◽  
Soon-Ki Kwon ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
High Charge ◽  
Crystalline Order ◽  
High Charge Carrier Mobility

The selenophene-substitution can lead to a higher crystalline order as well as a high charge carrier mobility in isoindigo-based polymers.

Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors

2008 ◽  
Vol 92 (22) ◽  
pp. 223114 ◽  
Author(s):  
Guangyu Xu ◽  
Fei Liu ◽  
Song Han ◽  
Koungmin Ryu ◽  
Alexander Badmaev ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Dianthraceno[a,e]pentalenes: synthesis, crystallographic structures and applications in organic field-effect transistors

2015 ◽  
Vol 51 (3) ◽  
pp. 503-506 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Wenhua Zhang ◽  
Shiqiang Bai ◽  
Kuo-Wei Huang ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Dense Packing ◽  
Organic Field Effect Transistors ◽  
High Charge ◽  
Crystallographic Structures ◽  
High Charge Carrier Mobility

Two stable dianthraceno[a,e]pentalenes were synthesized and DAP2 exhibited a high charge carrier mobility of 0.65 cm2 V−1 s−1 due to its dense packing.

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

2008 ◽  
Vol 104 (9) ◽  
pp. 094505 ◽  
Author(s):  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
M. E. Levinshtein ◽  
P. A. Ivanov ◽  
J. W. Palmour ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise

Transitions between channel and contact regimes of low-frequency noise in many-layer MoS2 field effect transistors

2019 ◽  
Vol 114 (11) ◽  
pp. 113502 ◽  
Author(s):  
Jiseok Kwon ◽  
Joon Hyeong Park ◽  
Collin J. Delker ◽  
Charles T. Harris ◽  
Brian Swartzentruber ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Effect of Film Morphology on Charge Transport in C60-based Organic Field Effect Transistors

2010 ◽  
Vol 1270 ◽  
Author(s):  
Mujeeb Ullah ◽  
Andrey K. Kadashchuk ◽  
Philipp Stadler ◽  
Alexander Kharchenko ◽  
Almantas Pivrikas ◽  
...  
Keyword(s):  
Grain Size ◽  
Charge Carrier ◽  
Substrate Temperature ◽  
Charge Transport ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Film Morphology ◽  
Organic Field Effect Transistors

AbstractThe critical factor that limits the efficiencies of organic electronic devices is the low charge carrier mobility which is attributed to disorder in organic films. In this work we study the effects of active film morphology on the charge transport in Organic Field Effect Transistors (OFETs). We fabricated the OFETs using different substrate temperature to grow different morphologies of C60 films by Hot Wall Epitaxy. Atomic Force Microscopy images and XRD results showed increasing grain size with increasing substrate temperature. An increase in field effect mobility was observed for different OFETs with increasing grain size in C60 films. The temperature dependence of charge carrier mobility in these devices followed the empirical relation named as Meyer-Neldel Rule and showed different activation energies for films with different degree of disorder. A shift in characteristic Meyer-Neldel energy was observed with changing C60 morphology which can be considered as an energetic disorder parameter.

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