Effect of the Silicon-Carbide Microand Nanoparticle Size on the Thermo-Elastic and Time-Dependent Creep Response of a Rotating Al-SiC Composite Cylinder

2017 ◽  
Keyword(s):  
Silicon Carbide ◽  
Time Dependent ◽  
Nanoparticle Size ◽  
Composite Cylinder ◽  
Creep Response

Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide

2004 ◽  
Vol 33 (5) ◽  
pp. 408-411 ◽  
Author(s):  
D. W. Gotthold ◽  
S. P. Guo ◽  
R. Birkhahn ◽  
B. Albert ◽  
D. Florescu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Time Dependent

Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 782-787
Author(s):  
Kevin Matocha ◽  
In Hwan Ji ◽  
Sauvik Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Threshold Voltage ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Gate Bias ◽  
Constant Voltage ◽  
Time Dependent Dielectric Breakdown ◽  
Planar Silicon ◽  
State Of Art

The reliability and ruggedness of Monolith/Littelfuse planar SiC MOSFETs have been evaluated using constant voltage time-dependent dielectric breakdown for gate oxide wearout predictions, showing estimated > 100 year life at VGS=+25V and T=175C. Using extended time high-temperature gate bias, we have shown < 250 mV threshold voltage shifts for > 5000 hours under VGS=+25V and negligible threshold voltage shifts for > 2500 hours under VGS=-10V, both at T=175C. Under unclamped inductive switching, these 1200V, 80 mOhm SiC MOSFETs survive 1000 mJ of avalanche energy, meeting state-of-art ruggedness for 1200V SiC MOSFETs.

Analysis of creep-induced strains and stresses in notches subjected to a cyclic load

2007 ◽  
Vol 42 (5) ◽  
pp. 361-375 ◽  
Author(s):  
J E Nuñez ◽  
G Glinka
Keyword(s):  
Finite Element ◽  
Plane Stress ◽  
External Load ◽  
Cyclic Load ◽  
Time Dependent ◽  
Cyclic Loads ◽  
Creep Response ◽  
Stress Components ◽  
Estimation Of Time ◽  
Good Agreement

A method for the estimation of time-dependent strains and stresses in notches subjected to a cyclic load is discussed in the paper. The proposed solution is an extension of the methodology proposed previously for notches under a steady external load. A new algorithm is proposed to predict the creep response near notches in plane stress components subjected to cyclic loads. Predictions were compared with finite element data, and good agreement was obtained for various geometrical and material configurations.

scholarly journals Circumstellar chemistry of Si-C bearing molecules in the C-rich AGB star IRC+10216

2018 ◽  
Vol 14 (S343) ◽  
pp. 535-537
Author(s):  
L. Velilla-Prieto ◽  
J. Cernicharo ◽  
M. Agúndez ◽  
J. P. Fonfría ◽  
A. Castro-Carrizo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Line Emission ◽  
Growth Zone ◽  
Time Dependent ◽  
Circumstellar Envelope ◽  
Agb Stars ◽  
Millimeter Wavelengths ◽  
Stellar Photosphere ◽  
Main Components ◽  
Dust Seeds

AbstractSilicon carbide together with amorphous carbon are the main components of dust grains in the atmospheres of C-rich AGB stars. Small gaseous Si-C bearing molecules (such as SiC, SiCSi, and SiC2) are efficiently formed close to the stellar photosphere. They likely condense onto dust seeds owing to their highly refractory nature at the lower temperatures (i.e., below about 2500 K) in the dust growth zone which extends a few stellar radii from the photosphere. Beyond this region, the abundances of Si-C bearing molecules are expected to decrease until they are eventually reformed in the outer shells of the circumstellar envelope, owing to the interaction between the gas and the interstellar UV radiation field. Our goal is to understand the time-dependent chemical evolution of Si-C bond carriers probed by molecular spectral line emission in the circumstellar envelope of IRC+10216 at millimeter wavelengths.

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