ChemInform Abstract: TIME-DEPENDENT STRENGTH OF SILICONIZED SILICON CARBIDE UNDER STRESS AT 1000° AND 1100°

The reliability and ruggedness of Monolith/Littelfuse planar SiC MOSFETs have been evaluated using constant voltage time-dependent dielectric breakdown for gate oxide wearout predictions, showing estimated > 100 year life at VGS=+25V and T=175C. Using extended time high-temperature gate bias, we have shown < 250 mV threshold voltage shifts for > 5000 hours under VGS=+25V and negligible threshold voltage shifts for > 2500 hours under VGS=-10V, both at T=175C. Under unclamped inductive switching, these 1200V, 80 mOhm SiC MOSFETs survive 1000 mJ of avalanche energy, meeting state-of-art ruggedness for 1200V SiC MOSFETs.

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Time-dependent proportional limit stress of carbon fiber-reinforced silicon carbide ceramic-matrix composites considering interface oxidation

Journal of the Ceramic Society of Japan ◽

10.2109/jcersj2.18176 ◽

2019 ◽

Vol 127 (5) ◽

pp. 279-287 ◽

Cited By ~ 3

Author(s):

Li LONGBIAO

Keyword(s):

Silicon Carbide ◽

Carbon Fiber ◽

Ceramic Matrix Composites ◽

Ceramic Matrix ◽

Time Dependent ◽

Matrix Composites ◽

Proportional Limit ◽

Silicon Carbide Ceramic ◽

Limit Stress ◽

Proportional Limit Stress

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Micromechanism of Time Dependent Deformation and Fracture of Silicon Carbide under High Temperature Condition

Materials Science Forum ◽

10.4028/www.scientific.net/msf.233-234.109 ◽

1996 ◽

Vol 233-234 ◽

pp. 109-116 ◽

Cited By ~ 1

Author(s):

A.Toshimitsu Yokobori Jr. ◽

Toyohiko Yano ◽

T.E. Mitchell

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Time Dependent ◽

Deformation And Fracture ◽

High Temperature Condition

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Circumstellar chemistry of Si-C bearing molecules in the C-rich AGB star IRC+10216

Proceedings of the International Astronomical Union ◽

10.1017/s1743921318005410 ◽

2018 ◽

Vol 14 (S343) ◽

pp. 535-537

Author(s):

L. Velilla-Prieto ◽

J. Cernicharo ◽

M. Agúndez ◽

J. P. Fonfría ◽

A. Castro-Carrizo ◽

...

Keyword(s):

Silicon Carbide ◽

Line Emission ◽

Growth Zone ◽

Time Dependent ◽

Circumstellar Envelope ◽

Agb Stars ◽

Millimeter Wavelengths ◽

Stellar Photosphere ◽

Main Components ◽

Dust Seeds

AbstractSilicon carbide together with amorphous carbon are the main components of dust grains in the atmospheres of C-rich AGB stars. Small gaseous Si-C bearing molecules (such as SiC, SiCSi, and SiC2) are efficiently formed close to the stellar photosphere. They likely condense onto dust seeds owing to their highly refractory nature at the lower temperatures (i.e., below about 2500 K) in the dust growth zone which extends a few stellar radii from the photosphere. Beyond this region, the abundances of Si-C bearing molecules are expected to decrease until they are eventually reformed in the outer shells of the circumstellar envelope, owing to the interaction between the gas and the interstellar UV radiation field. Our goal is to understand the time-dependent chemical evolution of Si-C bond carriers probed by molecular spectral line emission in the circumstellar envelope of IRC+10216 at millimeter wavelengths.

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Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.641 ◽

2013 ◽

Vol 740-742 ◽

pp. 641-644

Author(s):

Bálint Somogyi ◽

Viktor Zólyomi ◽

Adam Gali

Keyword(s):

Silicon Carbide ◽

First Principles ◽

Density Functional Calculations ◽

Density Functional ◽

Near Infrared ◽

Living Cells ◽

Time Dependent ◽

Color Centers ◽

Dependent Density

Molecule-sized fluorescent emitters are much sought-after to probe biomolecules in living cells. We demonstrate here by time-dependent density functional calculations that the experimentally achievable 1-2 nm sized silicon carbide nanocrystals can emit light in the nearinfrared region after introducing appropriate color centers in them. These near-infrared luminescent silicon carbide nanocrystals may act as ideal fluorophores for in vivo bioimaging.

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