MECHANISMS FOR REMOVING OXIDES FROM THE INP SURFACE AT ANNEALING IN AN ARSENIC FLUX

2021 ◽  
Vol 57 (5) ◽  
pp. 11-17
Author(s):  
D. V. Dmitriev ◽  
D. A. Kolosovsky ◽  
A. I. Toropov ◽  
K. S. Zhuravlev
Keyword(s):  
Inp Surface

n-channel formation on semi-insulating InP surface by m.i.s.f.e.t.

1979 ◽  
Vol 15 (23) ◽  
pp. 743 ◽  
Author(s):  
Tsuyoshi Kawakami ◽  
Masamichi Okamura
Keyword(s):  
Channel Formation ◽  
Inp Surface

Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser

1989 ◽  
Vol 1 (1) ◽  
pp. 11-13 ◽  
Author(s):  
M. Oshikiri ◽  
H. Kawasaki ◽  
F. Koyama ◽  
K. Iga
Keyword(s):  
Threshold Current ◽  
Surface Emitting Laser ◽  
Inp Surface

Studies of InP surface and InP-insulator interface by spectral photoluminescence

1988 ◽  
Vol 40-41 ◽  
pp. 753-754 ◽  
Author(s):  
P. Leyral ◽  
H. Bouredoucen ◽  
B. Commere ◽  
S. Krawczyk
Keyword(s):  
Insulator Interface ◽  
Inp Surface

Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results

2014 ◽  
Vol 25 (19) ◽  
pp. 195201 ◽  
Author(s):  
Daniele Barettin ◽  
Roberta De Angelis ◽  
Paolo Prosposito ◽  
Matthias Auf der Maur ◽  
Mauro Casalboni ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Quantum Dot ◽  
Force Microscopy ◽  
Atomic Force ◽  
Inp Surface

scholarly journals Oxidation-Induced Polymerization of InP Surface and Implications for Optoelectronic Applications

2019 ◽  
Vol 123 (51) ◽  
pp. 30893-30902 ◽  
Author(s):  
Xueqiang Zhang ◽  
Tadashi Ogitsu ◽  
Brandon C. Wood ◽  
Tuan Anh Pham ◽  
Sylwia Ptasinska
Keyword(s):  
Optoelectronic Applications ◽  
Inp Surface

Passivation of an n-type InP surface with an As2S3 film

1998 ◽  
Vol 83 (4) ◽  
pp. 2025-2029 ◽  
Author(s):  
Yoichi Mada ◽  
Kazumi Wada
Keyword(s):  
Inp Surface
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