scholarly journals Linewidth and Ranging Characterization of a Vernier-Tuned Distributed Bragg Reflector (Vt-Dbr) All-Semiconductor Tunable Swept Laser System for Lidar in Autonomous Applications

2017 ◽  
Author(s):  
Taewan Kim
Keyword(s):  
Laser System ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector

scholarly journals Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector

1995 ◽  
Vol 67 (3) ◽  
pp. 407-409 ◽  
Author(s):  
A. Salokatve ◽  
K. Rakennus ◽  
P. Uusimaa ◽  
M. Pessa ◽  
T. Aherne ◽  
...  
Keyword(s):  
Bragg Reflector ◽  
Distributed Bragg Reflector

scholarly journals Design, fabrication and characterization of a distributed Bragg reflector for reducing the étendue of a wavelength converting system

2020 ◽  
Vol 28 (9) ◽  
pp. 12837
Author(s):  
Boxuan Gao ◽  
John Puthenparampil George ◽  
Jeroen Beeckman ◽  
Kristiaan Neyts
Keyword(s):  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Fabrication And Characterization

Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics

2005 ◽  
Vol 2 (7) ◽  
pp. 2895-2898 ◽  
Author(s):  
Teruhisa Kotani ◽  
Yoshitaka Hatada ◽  
Mitsuru Funato ◽  
Yukio Narukawa ◽  
Takashi Mukai ◽  
...  
Keyword(s):  
Bragg Reflector ◽  
Lasing Threshold ◽  
Integrated Photonics ◽  
Distributed Bragg Reflector ◽  
Fabrication And Characterization

scholarly journals MBE growth and characterization of a II–VI distributed Bragg reflector and microcavity lattice-matched to MgTe

2013 ◽  
Vol 378 ◽  
pp. 266-269 ◽  
Author(s):  
J.-G. Rousset ◽  
J. Kobak ◽  
T. Slupinski ◽  
T. Jakubczyk ◽  
P. Stawicki ◽  
...  
Keyword(s):  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Mbe Growth ◽  
Lattice Matched

Fabrication and optical characterization of a porous silicon distributed Bragg reflector

2013 ◽  
Vol 62 (1) ◽  
pp. 132-135 ◽  
Author(s):  
Bong-Ju Lee ◽  
Bomin Cho ◽  
Moonjoo Koh ◽  
Honglae Sohn ◽  
Young Chun Ko
Keyword(s):  
Porous Silicon ◽  
Optical Characterization ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector

Fabrication and characterization of microcavity organic light-emitting diode with CaF2/ZnS distributed Bragg reflector

2020 ◽  
Vol 699 ◽  
pp. 137912 ◽  
Author(s):  
Takuya Kitabayashi ◽  
Teruyuki Asashita ◽  
Naoya Satoh ◽  
Takayuki Kiba ◽  
Midori Kawamura ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Fabrication And Characterization

Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

2004 ◽  
Vol 272 (1-4) ◽  
pp. 322-326 ◽  
Author(s):  
Hiroyasu Ishikawa ◽  
Baijun Zhang ◽  
Kenta Asano ◽  
Takashi Egawa ◽  
Takashi Jimbo
Keyword(s):  
Light Emitting Diodes ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Light Emitting

Comprehensive structural and optical characterization of AlAs/GaAs distributed Bragg reflector

2019 ◽  
Vol 33 (08) ◽  
pp. 1950054
Author(s):  
B. O. Alaydin ◽  
E. S. Tuzemen ◽  
D. Altun ◽  
S. Elagoz
Keyword(s):  
High Resolution ◽  
Penetration Depth ◽  
Optical Characterization ◽  
Bragg Reflector ◽  
High Angle ◽  
X Ray Diffraction ◽  
Distributed Bragg Reflector ◽  
X Ray ◽  
Dynamical Simulations

30-pair AlAs/GaAs distributed Bragg reflector (DBR), which has 1030 nm center reflectivity, is studied extensively by means of High Resolution X-ray Diffraction (HR-XRD) and reflectivity measurements. Theta/2-Theta measurements and dynamical simulations have been done for (002), (004) and (006) planes to determine strain and thickness of AlAs and GaAs layers in the DBR stack. Reciprocal space mappings (RSMs) are measured for same planes and also for (224) plane to find out tilt and relaxation of the DBR stack. Relaxation is not observed and it is confirmed with symmetric in-plane (400) Theta/2-Theta and RSM measurements. This is a first study in the literature according to the best of our knowledge. Finally, we have shown sensitivity of high angle diffraction planes to disorders in crystal. Angle-dependent reflectivity simulations have been also done and compared with measurements. 99.99% reflectivity is obtained with 99.5 nm stop bandwidth and 482.7 nm penetration depth.

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