scholarly journals Design, fabrication and characterization of a distributed Bragg reflector for reducing the étendue of a wavelength converting system

2020 ◽  
Vol 28 (9) ◽  
pp. 12837
Author(s):  
Boxuan Gao ◽  
John Puthenparampil George ◽  
Jeroen Beeckman ◽  
Kristiaan Neyts
2005 ◽  
Vol 2 (7) ◽  
pp. 2895-2898 ◽  
Author(s):  
Teruhisa Kotani ◽  
Yoshitaka Hatada ◽  
Mitsuru Funato ◽  
Yukio Narukawa ◽  
Takashi Mukai ◽  
...  

2020 ◽  
Vol 699 ◽  
pp. 137912 ◽  
Author(s):  
Takuya Kitabayashi ◽  
Teruyuki Asashita ◽  
Naoya Satoh ◽  
Takayuki Kiba ◽  
Midori Kawamura ◽  
...  

1996 ◽  
Vol 07 (03) ◽  
pp. 399-407
Author(s):  
RONGHAN WU ◽  
WENZHI GAO ◽  
JUN ZHAO ◽  
ZHIBIAO CHEN ◽  
SHIMING LIN ◽  
...  

GaAs/GaAlAs MQW reflection modulators and SEED have been investigated. The analysis is emphasized on the combined behaviors of quantum confined Stark effect (QCSE), distributed Bragg reflector (DBR), and different asymmetric Fabry–Perot cavities (ASFP). Experimental results include the fabrication and characterization of a modulator array with a contrast ratio of about 10 dB and S-SEED array with optical switch energy less than 10 fJ /(µ m )2. An application of a modulator array in microoptical interconnection module is also demonstrated.


1995 ◽  
Vol 67 (3) ◽  
pp. 407-409 ◽  
Author(s):  
A. Salokatve ◽  
K. Rakennus ◽  
P. Uusimaa ◽  
M. Pessa ◽  
T. Aherne ◽  
...  

2013 ◽  
Vol 378 ◽  
pp. 266-269 ◽  
Author(s):  
J.-G. Rousset ◽  
J. Kobak ◽  
T. Slupinski ◽  
T. Jakubczyk ◽  
P. Stawicki ◽  
...  

2013 ◽  
Vol 62 (1) ◽  
pp. 132-135 ◽  
Author(s):  
Bong-Ju Lee ◽  
Bomin Cho ◽  
Moonjoo Koh ◽  
Honglae Sohn ◽  
Young Chun Ko

2004 ◽  
Vol 272 (1-4) ◽  
pp. 322-326 ◽  
Author(s):  
Hiroyasu Ishikawa ◽  
Baijun Zhang ◽  
Kenta Asano ◽  
Takashi Egawa ◽  
Takashi Jimbo

2019 ◽  
Vol 33 (08) ◽  
pp. 1950054
Author(s):  
B. O. Alaydin ◽  
E. S. Tuzemen ◽  
D. Altun ◽  
S. Elagoz

30-pair AlAs/GaAs distributed Bragg reflector (DBR), which has 1030 nm center reflectivity, is studied extensively by means of High Resolution X-ray Diffraction (HR-XRD) and reflectivity measurements. Theta/2-Theta measurements and dynamical simulations have been done for (002), (004) and (006) planes to determine strain and thickness of AlAs and GaAs layers in the DBR stack. Reciprocal space mappings (RSMs) are measured for same planes and also for (224) plane to find out tilt and relaxation of the DBR stack. Relaxation is not observed and it is confirmed with symmetric in-plane (400) Theta/2-Theta and RSM measurements. This is a first study in the literature according to the best of our knowledge. Finally, we have shown sensitivity of high angle diffraction planes to disorders in crystal. Angle-dependent reflectivity simulations have been also done and compared with measurements. 99.99% reflectivity is obtained with 99.5 nm stop bandwidth and 482.7 nm penetration depth.


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