Interdiffusion Phenomena of Zirconia-Nitride Layers on Coated AISI 310 Steel

2011 ◽  
pp. 71-83
Author(s):  
Bernardo J. Gómez ◽  
Lucas Nachez ◽  
Ricardo Caruso ◽  
Antonio Díaz-Parralejo ◽  
Jorge N. Feugeas ◽  
...  
Keyword(s):  
Nitride Layers ◽  
Interdiffusion Phenomena

Interdiffusion Phenomena of Zirconia-Nitride Layers on Coated AISI 310 Steel

2011 ◽  
pp. 71-83 ◽  
Author(s):  
Bernardo J. Gómez ◽  
Lucas Nachez ◽  
Ricardo Caruso ◽  
Antonio Díaz-Parralejo ◽  
Jorge N. Feugeas ◽  
...  
Keyword(s):  
Nitride Layers ◽  
Interdiffusion Phenomena

Interdiffusion Phenomena of Zirconia-Nitride Layers on Coated AISI 310 Steel

2011 ◽  
Vol 8 (4) ◽  
pp. 103357
Author(s):  
Bernardo J. Gómez ◽  
Lucas Nachez ◽  
Ricardo Caruso ◽  
Antonio Díaz-Parralejo ◽  
Jorge N. Feugeas ◽  
...  
Keyword(s):  
Nitride Layers ◽  
Interdiffusion Phenomena

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

scholarly journals Investigation of titanium—nitride layers for solar-cell contacts

1980 ◽  
Vol 27 (4) ◽  
pp. 873-876 ◽  
Author(s):  
H. von Seefeld ◽  
N.W. Cheung ◽  
M. Maenpaa ◽  
M.-A. Nicolet
Keyword(s):  
Solar Cell ◽  
Titanium Nitride ◽  
Cell Contacts ◽  
Nitride Layers

Formation mechanism and structures of buried oxy-nitride layers produced by ion beam synthesis

Vacuum ◽  
1986 ◽  
Vol 36 (11-12) ◽  
pp. 891-895 ◽  
Author(s):  
KJ Reeson ◽  
PLF Hemment ◽  
JA Kilner ◽  
RJ Chater ◽  
CD Meekison ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Ion Beam ◽  
Ion Beam Synthesis ◽  
Nitride Layers
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