The Study of Fatigue Mechanisms with Electron Channeling

2009 ◽  
pp. 254-254-22 ◽  
Author(s):  
DL Davidson
Keyword(s):  
Electron Channeling

Electron Channeling Patterns

1977 ◽  
Vol 35 ◽  
pp. 12-13
Author(s):  
David C. Joy
Keyword(s):  
Electron Diffraction ◽  
Incidence Angle ◽  
Photographic Plate ◽  
Diffraction Effect ◽  
Angle Of Incidence ◽  
Bulk Single Crystal ◽  
Time Resolved ◽  
Electron Channeling ◽  
Spatially Resolved ◽  
Large Bulk

Electron channeling patterns (ECP) were first found by Coates (1967) while observing a large bulk, single crystal of silicon in a scanning electron microscope. The geometric pattern visible was shown to be produced as a result of the changes in the angle of incidence, between the beam and the specimen surface normal, which occur when the sample is examined at low magnification (Booker, Shaw, Whelan and Hirsch 1967).A conventional electron diffraction pattern consists of an angularly resolved intensity distribution in space which may be directly viewed on a fluorescent screen or recorded on a photographic plate. An ECP, on the other hand, is produced as the result of changes in the signal collected by a suitable electron detector as the incidence angle is varied. If an integrating detector is used, or if the beam traverses the surface at a fixed angle, then no channeling contrast will be observed. The ECP is thus a time resolved electron diffraction effect. It can therefore be related to spatially resolved diffraction phenomena by an application of the concepts of reciprocity (Cowley 1969).

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

2014 ◽  
Vol 104 (23) ◽  
pp. 232111 ◽  
Author(s):  
Santino D. Carnevale ◽  
Julia I. Deitz ◽  
John A. Carlin ◽  
Yoosuf N. Picard ◽  
Marc De Graef ◽  
...  
Keyword(s):  
Thin Films ◽  
Misfit Dislocation ◽  
Contrast Imaging ◽  
Electron Channeling

scholarly journals Quantitative misfit dislocation characterization with electron channeling contrast imaging

2021 ◽  
Vol 27 (S1) ◽  
pp. 912-914
Author(s):  
Ari Blumer ◽  
Marzieh Baan ◽  
Zak Blumer ◽  
Jacob Boyer ◽  
Tyler J. Grassman
Keyword(s):  
Misfit Dislocation ◽  
Contrast Imaging ◽  
Electron Channeling

Electron channeling radiation from diamonds with and without platelets

1985 ◽  
Vol 57 (5) ◽  
pp. 1661-1664 ◽  
Author(s):  
H. Park ◽  
J. O. Kephart ◽  
R. K. Klein ◽  
R. H. Pantell ◽  
B. L. Berman ◽  
...  
Keyword(s):  
Electron Channeling ◽  
Channeling Radiation

scholarly journals Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN

2013 ◽  
Vol 20 (1) ◽  
pp. 55-60 ◽  
Author(s):  
Gunasekar Naresh-Kumar ◽  
Jochen Bruckbauer ◽  
Paul R. Edwards ◽  
Simon Kraeusel ◽  
Ben Hourahine ◽  
...  
Keyword(s):  
Structural Damage ◽  
Light Emission ◽  
Threading Dislocations ◽  
Nonradiative Recombination ◽  
Contrast Imaging ◽  
Force Microscopy ◽  
Electron Channeling ◽  
Microscopy Techniques ◽  
Cathodoluminescence Imaging ◽  
Edge Dislocations

AbstractWe combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black–white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.

Publisher’s Note: Imaging the Phase Separation in Atomically Thin BuriedSrTiO3Layers by Electron Channeling [Phys. Rev. Lett.100, 036101 (2008)]

2008 ◽  
Vol 100 (4) ◽  
Author(s):  
L. Fitting Kourkoutis ◽  
C. Stephen Hellberg ◽  
V. Vaithyanathan ◽  
Hao Li ◽  
M. K. Parker ◽  
...  
Keyword(s):  
Phase Separation ◽  
Electron Channeling
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