Radial Lifetime Profiling on Silicon Specimens by the Photoconductivity Decay and Photocurrent Methods—A Comparison

2009 ◽  
pp. 183-183-9
Author(s):  
FG Vieweg-Gutberlet ◽  
PF Siegesleitner ◽  
M Stallhofer
Keyword(s):  
Photoconductivity Decay

Precise Measurements of Transient Excess Carrier Lifetimes in II-VI Films and Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
W. O. Doggett ◽  
Michael W. Thelander ◽  
J. F. Schetzina
Keyword(s):  
Molecular Beam ◽  
Statistical Data ◽  
Laser Pulses ◽  
Statistical Data Analysis ◽  
Analysis Techniques ◽  
Excess Carrier ◽  
Carrier Lifetimes ◽  
System A ◽  
Transient Photoconductivity ◽  
Photoconductivity Decay

ABSTRACTA system has been developed for accurately measuring lifetimes for photo-induced excess current carriers in semiconductors using the transient photoconductivity decay method. The specifications of state-of-the-art equipment, considerations peculiar to the capture of fast transient pulses, and sophisticated statistical data analysis techniques are discussed. Experimental results are presented to demonstrate the capability of the system (a) to measure lifetimes in the 40-ns - 75-µs range for temperatures varying from 77K to 300K with 10% accuracy for single lifetime decays and 30% accuracy for individual effective lifetimes in a multi-component decay, and (b) to use a 300-ns lifetime photoconductor as a detector to measure nanosecond-time-scale structure of laser pulses. The predominant excess carrier lifetimes of HgCdTe samples grown at NCSU by photoassisted molecular beam epitaxy (PAMBE) ranged from 46 ns at 300K to 341 ns at 77K. CdTe samples and CdMnTe-CdTe superlattices exhibited a multi-component decay with the two longest components having effective lifetimes of 26 µs and 4 µs for CdTe and 75 µs and 10 µs for CdMnTe-CdTe. These values were relatively insensitive to temperature variation.

On the Problem of Determining the Bulk Lifetime by Photoconductivity Decay on the Unpassivated Samples of Monocrystalline Silicon

2017 ◽  
Vol 46 (8) ◽  
pp. 585-590 ◽  
Author(s):  
I. M. Anfimov ◽  
S. P. Kobeleva ◽  
A. V. Pylnev ◽  
I. V. Schemerov ◽  
D. S. Egorov ◽  
...  
Keyword(s):  
Monocrystalline Silicon ◽  
Photoconductivity Decay

Long-term photoconductivity decay in n-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation

2013 ◽  
Vol 47 (1) ◽  
pp. 174-177 ◽  
Author(s):  
V. V. Vainberg ◽  
V. M. Vasetskii ◽  
Yu. N. Gudenko ◽  
V. N. Poroshin ◽  
N. V. Baidus ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Coupled Quantum Wells ◽  
Photoconductivity Decay

Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay

2005 ◽  
pp. 405-408
Author(s):  
R.J. Kumar ◽  
P.A. Losee ◽  
Can Hua Li ◽  
Joseph Seiler ◽  
I. Bhat ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Photoconductivity Decay

Investigation of Porous Silicon Films Structure by Optical Methods

1992 ◽  
Vol 283 ◽  
Author(s):  
P. Basmaji ◽  
V. Grivickas ◽  
G. I. Surdutovich ◽  
R. Vitlina ◽  
V. S. Bagnato
Keyword(s):  
Porous Silicon ◽  
High Energy ◽  
Optical Methods ◽  
Injection Level ◽  
Critical Porosity ◽  
Quantum Size ◽  
High Injection Level ◽  
High Injection ◽  
Photoconductivity Decay ◽  
Band Absorption

ABSTRACTThe structure of aged porous silicon (PS) has been investigated using reflectivity, photoluminescence (PL), optical absorption and photoconductivity decay. An optical anisotropy in a perpendicular to surface direction is observed for PS samples below a critical porosity of 70%. The photostability of the PL spectra imply three different structures of PS, these should be attributed to quantum size structures, polymeric type structures and fluor-related structures. The absorption edge is deconvoluted into a band-to-band absorption with energy ranging between Eg = 1.6–2 eV and an absorption shoulder at hu ≤ Eg. The high energy PL band around 2.3 eV resembles that of fluoroindate glass. The observed rapid lifetime at high injection level is attributed to excitonic Auger-type recombination.

Influence of the Surfaces Characteristics on the Luminescent Property of Porous Silicon

2014 ◽  
Vol 1052 ◽  
pp. 181-187
Author(s):  
Yan Li Ding ◽  
Yue Zhao ◽  
Yue Feng ◽  
Xiao Yan Liang ◽  
Lin Jun Wang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Porous Silicon ◽  
Luminescent Property ◽  
Blue Emission ◽  
Surface States ◽  
Green Emission ◽  
Decay Measurement ◽  
Photoconductivity Decay

Photoluminescence of porous silicon (PS) prepared by different etched time was studied. The photoluminescence might originate from the recombination of carriers and surface states, which was proved by FTIR, Raman spectroscopy and SEM. Furthermore, the hydrogen-related groups on the PS surface could eliminate the surface states for the blue emission, but the quantities of surface states for the green emission were depended on the uncovered area on the PS surface. Moreover, the shape of photoconductivity curve was depended on the quantities of the surface states, which also was related to the uncovered area on the PS surface. In addition, the results of the microwave-detected photoconductivity decay measurement indicated thatthe defects on the PS surface increased with the increase of the etched time, which would be related to the increase of the depth of pores.

The Role of Deep Defect Relaxation Dynamics in Optical Processes in Hydrogenated Amorphous Silicon

1995 ◽  
Vol 377 ◽  
Author(s):  
Fan Zhong ◽  
J. David Cohen
Keyword(s):  
Relaxation Dynamics ◽  
Energy Position ◽  
Defect Band ◽  
Transient Photoconductivity ◽  
Photoconductivity Decay ◽  
Long Time ◽  
Intimate Relation ◽  
Hydrogenated Amorphous ◽  
Defect Relaxation

ABSTRACTWe report results of a transient modulated photocurrent technique which allows us to observe the time evolution of the D0 sub-band under the application of optical bias light and after turning off this bias light Our measurements show that the D0 band shifts monotonically to shallower thermal energies after the bias light is applied, with roughly 10 seconds to saturation at 300K and to deeper thermal energies after removing the bias light, with a decay time of over 1000 seconds. We have also found there exists an intimate relation between the motion of the D0 band and that of the quasi Fermi level as deduced from the transient photoconductivity and therefore, in particular, to the long time photoconductivity decay. This relation is exactly reproduced by the assumption of a D0 band whose energy position evolves in time, together with a recombination process dominated by changes in the charge state of a deeper defect band under light bias.

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