Measurement of Minority Carrier Lifetime in Silicon Crystals by the Photoconductive Decay Technique

Lifetime Factors in Silicon ◽

10.1520/stp35135s ◽

2009 ◽

pp. 161-161-10 ◽

Cited By ~ 3

Author(s):

AR Gerhard ◽

CW Pearce

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Photoconductive Decay ◽

Silicon Crystals

Download Full-text

Effect of high oxygen doping on the minority carrier lifetime in heat-treated silicon crystals

Crystal Research and Technology ◽

10.1002/crat.2170200412 ◽

1985 ◽

Vol 20 (4) ◽

pp. 485-489 ◽

Cited By ~ 5

Author(s):

K. D. Glinchuk ◽

N. M. Litovchenko ◽

Z. A. Salnic ◽

S. I. Skryl

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

High Oxygen ◽

Oxygen Doping ◽

Silicon Crystals ◽

Heat Treated

Download Full-text

Study on minority carrier lifetime of n-HgZnTe by photoconductive decay method

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)80261-3 ◽

1998 ◽

Vol 184-185 ◽

pp. 1247-1252 ◽

Cited By ~ 2

Author(s):

Ki Nam Oh ◽

Ki Hyun Kim ◽

Jin Ki Hong ◽

Yun Chul Chung ◽

Sun Ung Kim ◽

...

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Photoconductive Decay

Download Full-text

Comparison of Silicon Surface Preparation Methods for Measurement of Minority Carrier Lifetime Using the Microwave Photoconductive Decay Couples with Continuous Corona Charge

ECS Meeting Abstracts ◽

10.1149/ma2009-02/22/1959 ◽

2009 ◽

Keyword(s):

Silicon Surface ◽

Carrier Lifetime ◽

Minority Carrier ◽

Surface Preparation ◽

Minority Carrier Lifetime ◽

Preparation Methods ◽

Photoconductive Decay ◽

Corona Charge

Download Full-text

Some Observations of the Effects of Oxygen on the Minority Carrier Lifetime and Optical Absorption of Silicon Crystals pulled in vacuo†

Journal of Electronics and Control ◽

10.1080/00207215708937078 ◽

1957 ◽

Vol 3 (2) ◽

pp. 171-182 ◽

Cited By ~ 7

Author(s):

G. W. GREEN ◽

G. A. HOGARTH ◽

F. A. JOHNSON

Keyword(s):

Optical Absorption ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Silicon Crystals

Download Full-text

The effect of polysilicon impurities on minority carrier lifetime in Cz silicon crystals

The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 ◽

10.1109/pvsc.1991.169229 ◽

2002 ◽

Author(s):

J.E.A. Maurits ◽

H.J. Dawson ◽

C.H. Weaver

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Silicon Crystals

Download Full-text

Study on minority carrier lifetime of n-HgZnTe by photoconductive decay method

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00769-0 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 1247-1252 ◽

Cited By ~ 2

Author(s):

K Oh

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Photoconductive Decay

Download Full-text

Noncontact minority‐carrier lifetime measurement for magnetic field applied Czochralski silicon crystals

Journal of Applied Physics ◽

10.1063/1.348641 ◽

1991 ◽

Vol 69 (4) ◽

pp. 2700-2702 ◽

Cited By ~ 7

Author(s):

Y. Kirino ◽

F. Shimura

Keyword(s):

Magnetic Field ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Lifetime Measurement ◽

Czochralski Silicon ◽

Silicon Crystals

Download Full-text

Effects of Oxygen Precipitation on Minority Carrier Lifetime in Silicon Crystals

Silicon Processing ◽

10.1520/stp36179s ◽

2009 ◽

pp. 369-369-20 ◽

Cited By ~ 4

Author(s):

CJ Varker ◽

JD Whitfield ◽

PL Fejes

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Silicon Crystals ◽

Oxygen Precipitation

Download Full-text

The effect of swirl defects on the minority carrier lifetime in heat-treated silicon crystals

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/10/6/013 ◽

1977 ◽

Vol 10 (6) ◽

pp. 899-910 ◽

Cited By ~ 8

Author(s):

A Usami ◽

Y Fujii ◽

K Monoka

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Silicon Crystals ◽

Heat Treated

Download Full-text

IRE Standards on Solid-State Devices: Measurement of Minority-Carrier Lifetime in Germanium and Silicon by the Method of Photoconductive Decay

Proceedings of the IRE ◽

10.1109/jrproc.1961.287921 ◽

1961 ◽

Vol 49 (8) ◽

pp. 1292-1299 ◽

Cited By ~ 8

Keyword(s):

Solid State ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Photoconductive Decay ◽

Solid State Devices

Download Full-text